• Title/Summary/Keyword: analog memory

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Accuracy of Current Delivery System in Current Source Data-Driver IC for AM-OLED

  • Hattori, Reiji
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.4
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    • pp.269-274
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    • 2004
  • Current delivery system, in which the analog current produced by a unique DAC circuit is stored into a current-memory circuit and delivered in a time-divided sequence, shows variation of output current as low as 4% in a current source data-driver IC for AM-OLED driven by a current-programmed method without any fuse repairing after fabrication. This driver IC has 54 outputs and can sink constant current as low as 3 ${\mu}A$ with 6-bit analog levels. Such a low current level without variation can hardly be obtained by an ordinary MOS transistor because the current level is in the sub-threshold region and changes exponentially with threshold voltage variation. Thus we adopted a current mirror circuit composed of bipolar transistors to supply well-controlled current within a nano-ampere range.

A Study on Voltammetry System Design for Realizing High Sensitivity Nano-Labeled Sensor of Detecting Heavy Metals (중금속 검출용 고감도 나노표지센서 구현을 위한 볼타메트리 시스템 설계 연구)

  • Kim, Ju-Myoung;Rhee, Chang-Kyu
    • Journal of Powder Materials
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    • v.19 no.4
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    • pp.297-303
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    • 2012
  • In this study, voltammetry system for realizing high sensitivity nano-labeled sensor of detecting heavy metals was designed, and optimal system operating conditions were determined. High precision digital to analog converter (DAC) circuit was designed to control applied unit voltage at working electrode and analog to digital converter (ADC) circuit was designed to measure the current range of $0.1{\sim}1000{\mu}A$ at counter electrode. Main control unit (MCU) circuit for controlling voltammetry system with 150 MHz clock speed, main memory circuit for the mathematical operation processing of the measured current value and independent power circuit for analog/digital circuit parts to reduce various noise were designed. From result of voltammetry system operation, oxidation current peaks which are proportional to the concentrations of Zn, Cd and Pb ions were found at each oxidation potential with high precision.

Adaptive current-steering analog duty cycle corrector with digital duty error detection (디지털 감지기를 통해 전류 특성을 조절하는 아날로그 듀티 사이클 보정 회로)

  • Choi, Hyun-Su;Kim, Chan-Kyung;Kong, Bai-Sun;Jun, Young-Hyun
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.465-466
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    • 2006
  • In this paper, novel analog duty cycle corrector (DCC) with a digital duty error detector is proposed. The digital duty error detector measures the duty error of the clock and converts it into a digital code. This digital code is then used to accurately correct the duty ratio by adaptively steering the charge-pump current. The proposed duty cycle corrector was implemented using an 80nm DRAM process with 1.8V supply voltage. The simulation result shows that the proposed duty cycle corrector improves the settling time up to $70{\sim}80%$ at 500MHz clock frequency for the same duty correction accuracy as the conventional analog DCC.

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Design of PMOS-Diode Type eFuse OTP Memory IP (PMOS-다이오드 형태의 eFuse OTP IP 설계)

  • Kim, Young-Hee;Jin, Hongzhou;Ha, Yoon-Gyu;Ha, Pan-Bong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.1
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    • pp.64-71
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    • 2020
  • eFuse OTP memory IP is required to trim the analog circuit of the gate driving chip of the power semiconductor device. Conventional NMOS diode-type eFuse OTP memory cells have a small cell size, but require one more deep N-well (DNW) mask. In this paper, we propose a small PMOS-diode type eFuse OTP memory cell without the need for additional processing in the CMOS process. The proposed PMOS-diode type eFuse OTP memory cell is composed of a PMOS transistor formed in the N-WELL and an eFuse link, which is a memory element and uses a pn junction diode parasitic in the PMOS transistor. A core driving circuit for driving the array of PMOS diode-type eFuse memory cells is proposed, and the SPICE simulation results show that the proposed core circuit can be used to sense post-program resistance of 61㏀. The layout sizes of PMOS-diode type eFuse OTP memory cell and 512b eFuse OTP memory IP designed using 0.13㎛ BCD process are 3.475㎛ × 4.21㎛ (= 14.62975㎛2) and 119.315㎛ × 341.95㎛ (= 0.0408mm2), respectively. After testing at the wafer level, it was confirmed that it was normally programmed.

PCM Encoder Structure for Real-time Updating of Telemetry System Parameters (원격 측정 시스템 파라미터 실시간 업데이트 PCM 엔코더 구조)

  • Park, Yu-Kwang;Yoon, Won-Ju
    • Journal of Advanced Navigation Technology
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    • v.23 no.5
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    • pp.452-459
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    • 2019
  • In this paper, we describe a PCM encoder structure that can update the telemetry system parameters in real time. In the PCM encoder, an analog signal control unit for FPGA, flash memory, and sensor data acquisition was constructed. UART communication, analog signal control, flash memory control, and frame generation are possible through logic inside FPGA of PCM encoder. UART communication allows the PC to transmit parameter data to the PCM encoder, and flash memory is controlled to update the parameter of the telemetry system in real time and finally the frame is formed. Simulation and verification were performed to confirm whether the parameter data is updated in real time, and the proposed structure was used to construct a telemetry system with enhanced flexibility and convenience.

Digital holographic memory system using angular multiplexing (각도 다중화를 이용한 디지털 홀로그램의 저장 및 재생에 관한 연구)

  • Kim, Young-Hoon;Yang, Byung-Choon;Lee, Byoung-Ho;Park, Joo-Youn
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.984-986
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    • 1998
  • The volume holographic memory system suffers from the crosstalk noise. We study use of error correction coding(ECC) and angular multiplexing for digital holographic memory(DHM) system. The analog image is encoded to binary images by ECC. Binary images are stored using angular multiplexing in DHM. The retrieved binary images are decoded by ECC. The bit error-rate is measured for perspective of the DHM system.

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Low Power 260k Color TFT LCD Driver IC

  • Kim, Bo-Sung;Ko, Jae-Su;Lee, Won-Hyo;Park, Kyoung-Won;Hong, Soon-Yang
    • ETRI Journal
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    • v.25 no.5
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    • pp.288-296
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    • 2003
  • In this study, we present a 260k color TFT LCD driver chip set that consumes only 5 mW in the module, which has exceptionally low power consumption. To reduce power consumption, we used many power-lowering schemes in the logic and analog design. A driver IC for LCDs has a built-in graphic SRAM. Besides write and read operations, the graphic SRAM has a scan operation that is similar to the read operation of one row-line, which is displayed on one line in an LCD panel. Currently, the embedded graphic memory is implemented by an 8-transistor leaf cell and a 6-transistor leaf cell. We propose an efficient scan method for a 6-transistor embedded graphic memory that is greatly improved over previous methods. The proposed method is implemented in a 0.22 ${\mu}m$ process. We demonstrate the efficacy of the proposed method by measuring and comparing the current consumption of chips with and without our proposed scheme.

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An Analysis of Wideband Digital Radio Frequency Signal Reproduction Characteristics (광대역 디지털 고주파 신호 복제 특성 분석)

  • Chae Gyoo-Soo;Lim Joong-Soo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.6 no.5
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    • pp.401-406
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    • 2005
  • Digital memory circuits have been developed very fast according to the progress of semiconductor technology. But it was very difficult to memorize a wideband radio frequency signals. Many years ago, an analog frequency memory loop(FML) was used for store of radio frequency signal and the digital radio frequency memory was made according to the development of wideband amplifier and high speed sampler. We present a design of wideband digital radio frequency reproduction device using ladder circuit and the simulation results with respect to the sampling speed in this paper.

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A Study on the Implementation of Digital Radio Frequency Memory (디지털 고주파 메모리 구현에 관한 연구)

  • You, Byung-Sek;Kim, Young-Kil
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.9
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    • pp.2164-2170
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    • 2010
  • Digital Radio Frequency Memory, ( as DRFM ), is a device with the ability to restore output to the input RF signal in the required time after storing the incoming RF signals. Therefore DRFM is widely used in Jammer, EW Simulator, Target Echo Generator, and so on. This paper proposes its hardware implementation composed with the high frequency part and the digital processing part consisting of RF input/output module and local oscillator module. It is also proposed the replicated signal generation method which is consisted of the Analog-Digital conversion in the form of pulsed RF signal quantization, and FPGA to save and produce the playback signal, and RF signals to produce a Digital-Analog Conversion in the digital processing unit. This proposed scheme applied to test board and confirmed the validity of the proposed scheme through the test results obtained by the simulated input signals.

Efficient Flash Memory Access Power Reduction Techniques for IoT-Driven Rare-Event Logging Application (IoT 기반 간헐적 이벤트 로깅 응용에 최적화된 효율적 플래시 메모리 전력 소모 감소기법)

  • Kwon, Jisu;Cho, Jeonghun;Park, Daejin
    • IEMEK Journal of Embedded Systems and Applications
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    • v.14 no.2
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    • pp.87-96
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    • 2019
  • Low power issue is one of the most critical problems in the Internet of Things (IoT), which are powered by battery. To solve this problem, various approaches have been presented so far. In this paper, we propose a method to reduce the power consumption by reducing the numbers of accesses into the flash memory consuming a large amount of power for on-chip software execution. Our approach is based on using cooperative logging structure to distribute the sampling overhead in single sensor node to adjacent nodes in case of rare-event applications. The proposed algorithm to identify event occurrence is newly introduced with negative feedback method by observing difference between past data and recent data coming from the sensor. When an event with need of flash access is determined, the proposed approach only allows access to write the sampled data in flash memory. The proposed event detection algorithm (EDA) result in 30% reduction of power consumption compared to the conventional flash write scheme for all cases of event. The sampled data from the sensor is first traced into the random access memory (RAM), and write access to the flash memory is delayed until the page buffer of the on-chip flash memory controller in the micro controller unit (MCU) is full of the numbers of the traced data, thereby reducing the frequency of accessing flash memory. This technique additionally reduces power consumption by 40% compared to flash-write all data. By sharing the sampling information via LoRa channel, the overhead in sampling data is distributed, to reduce the sampling load on each node, so that the 66% reduction of total power consumption is achieved in several IoT edge nodes by removing the sampling operation of duplicated data.