• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• 한국재료학회지
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• 제22권8호
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.61-61
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• 2018

듀플렉스 스테인리스강은 페라이트와 오스테나이트 상이 공존하는 특징을 갖는다. 그러한 구조에 의해서 페라이트와 오스테나이트상의 장점을 동시에 갖는 특성이 있다. 높은 강도와, 우수한 내식성, 응력 부식 균열 그리고 낮은 니켈의 함량 때문에 안정적인 가격을 갖는 장점을 갖기 때문에 운송, 기름과 가스, 해양플랜트, 건축 그리고 높은 강도와 우수한 내식성이 필요한 분야에서 수요가 증가할 것으로 사료된다. 이러한 듀플렉스 스테인리스강의 형성에서 페라이트와 오스테나이트상의 균형과 내식성을 개선하기 위해 질소가 첨가된다[1,2]. 본 연구는 저니켈 듀플렉스 스테인리스강(STS 329 FLD)의 공식 형성 과정에서 질소의 함량이 공식 형성과 내식특성에 미치는 영향을 동전위분극, XPS(X-ray Photoelectron Spectroscopy) 그리고 GDOES(Glow Discharge Optical Emission Spectrometry)를 이용하여 규명하였다. GDOES를 이용하여 깊이별 원소 분포를 정량적으로 비교한 결과, 부동태막에서 질소는 기저에 비하여 증가하였고, 질소의 함량이 증가함에 따라 wt.% 또한 증가하였다. 이러한 부동태막의 깊이별 원소 분포특성이 내식특성과 공식의 크기에 미치는 영향을 동전위분극을 이용하였다. 질소의 함량이 증가하였을 경우, 부식전위는 증가하였으며, 부식전류는 감소하였다. 또한 부동태전류가 감소한 것을 확인할 수 있었다. 이러한 차이의 원인을 확인하기 위하여 XPS를 이용하여 질소의 화학적 상태를 확인하였다. 질소는 암모니아의 형태로 존재하는 것으로 확인되었다. 암모니아 상태로 부동태막에 존재함에 따라 공식이 형성될 때, 암모늄 화함물을 형성하여 공식 내부의 산성도를 낮춤으로써 공식의 형성이 억제된 것으로 사료된다. 또한 공식 이후의 표면을 관찰 할 경우 질소의 함량이 증가함에 따라 표면에서 공식이 거의 관찰되지 않았다.

• Corrosion Science and Technology
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• 제11권1호
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• pp.9-14
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• 2012

The formation of the Fe-Al inhibition layer in hot-dip galvanizing is a confusing issue for a long time. This study presents a characterization result on the inhibition layer formed on C-Mn-Cr and C-Mn-Si dual-phase steels after a short time galvanizing. The samples were annealed at $800^{\circ}C$ for 60 s in $N_{2}$-10% $H_{2}$ atmosphere with a dew point of $-30^{\circ}C$, and were then galvanized in a bath containing 0.2 %Al. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was employed for characterization. The TEM electron diffraction shows that only $Fe_{2}Al_{5}$ intermetallic phase was formed. No orientation relationship between the $Fe_{2}Al_{5}$ phase and the steel substrate could be identified. Two peaks of Al 2p photoelectrons, one from metallic aluminum and the other from $Al^{3+}$ ions, were detected in the inhibition layer, indicating that the layer is in fact a mixture of $Fe_{2}Al_{5}$ and $Al_{2}O_{3}$. TEM/EDS analysis verifies the existence of $Al_{2}O_{3}$ in the boundaries of $Fe_{2}Al_{5}$ grains. The nucleation of $Fe_{2}Al_{5}$ and the reduction of the surface oxide probably proceeded concurrently on galvanizing, and the residual oxides prohibited the heteroepitaxial growth of $Fe_{2}Al_{5}$.

• 한국재료학회지
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• 제27권4호
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• pp.216-220
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• 2017

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies ($V_O$) increased from 10.35 to 12.56 % as the EB dose increased from 0 to $7.5{\times}10^{16}electrons/cm^2$. Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

• 대한치과기공학회지
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• 제23권1호
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• pp.55-64
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• 2001

This study is focusing on the improvement of problems of Ti-6Al-4V alloy. A new Ti based alloy, Ti-15Sn-4Nb, have designed to examine any possibility of improving the mechanical properties and biocompatibility. Specimens of Ti alloys were melted in vacuum arc furnace and homogenized at $100^{\circ}C$ for 24h. All specimens were solution treated at $812^{\circ}C$ and aged at $500^{\circ}C$ for 10h. The corrosion resistance of Ti alloys was evaluated by potentiodynamic polarization test and immersion test inl%Lactic acid solutions. Ti-15Sn-4Nb system alloys showed Widmanstatten microstructure after solution treatment which is typical microstructure of ${\alpha}+{\beta}$ type Ti alloys. Analysing the corrosion resistance of Ti alloys, it was concluded that the passive films of Ti-15Sn-4Nb system alloys are more stable than that of Ti-6Al-4V alloys. Also, the corrosion resistance of Ti-15Sn-4Nb system alloys was improved with adding elements, Hf. It was analysed that the passive film of the Ti-15Sn-4Nb alloy which was formed in air atmosphere was consisted of TiO2, SnO and NbO through X-ray photoelectron spectroscopy(XPS) analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.113-113
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• 2008

Cu CMP (Chemical Mechanical Planarization) has been used to remove copper film and obtain a planar surface which is essential for the semiconductor devices. Generally, it is known that chemical reaction is a dominant factor in Cu CMP comparing to Silicon dioxide CMP. Therefore, Cu CMP slurry has been regarded as an important factor in the entire process. This investigation focused on understanding the effect of corrosion inhibitor on copper surface and CMP results. Benzotriazole (BTA) was used as a corrosion inhibitor in this experiment. For the surface analysis, electrochemical characteristics of Cu was measured by a potentiostat and surface modification was investigated by X-ray photoelectron spectroscopy (XPS). As a result, corrosion potential (Ecorr) increased and nitrogen concentration ratio on the copper surface also increased with BTA concentration. These results indicate that BTA prevents Cu surface from corrosion and forms Cu-BTA layer on Cu surface. CMP results are also well matched with these results. Material removal rate (MRR) decreased with BTA concentration and static etch rate also showed same trend. Consequently, adjustment of BTA concentration can give us control of step height variation and furthermore, this can be applicable for Cu pattern CMP.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.229-234
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• 2017

In this study, we fabricated a TFT gas sensor with ZnO nanorods grown by hydrothermal synthesis. The suggested devices were compared with the conventional ZnO film-type TFTs in terms of the gas-response properties and the electrical transfer characteristics. The ZnO seed layer is formed by atomic-layer deposition (ALD), and the precursors for the nanorods are zinc nitrate hexahydrate ($Zn(NO_3)_2{\cdot}6H_2O$) and hexamethylenetetramine ($(CH_2)6N_4$). When 15 ppm of NO gas was supplied in a gas chamber at $150^{\circ}C$ to analyze the sensing capability of the suggested devices, the sensitivity (S) was 4.5, showing that the nanorod-type devices respond sensitively to the external environment. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which showed that the oxygen deficiency of ZnO nanorods is higher than that of ZnO film, and confirms that the ZnO nanorod-type TFTs are advantageous for the fabrication of high-performance gas sensors.

• 접착 및 계면
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• 제12권4호
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• pp.144-150
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• 2011

폴리스티렌을 저수축제로 사용하고 Zn-stearate를 이형제로 사용하여 함량변화에 따라 벌크 몰드컴파운드의 표면형태 및 기계적 물성에 미치는 영향을 고찰하였다. XPS, 접촉각 측정기 등을 이용하여 표면과 깊이 방향에 대한 원소함량과 접촉각을 측정하였고, 표면형태는 FESEM을 이용하여 관찰하였으며, 표면조도 측정은 AFM을 이용하였다. 저수축제를 첨가하지 않은 경우에 비교하여 저수축제를 9.0 wt% 첨가하였을 경우에는 체적수축률은 0.35%에서 0.05%로 감소하였으며, 표면조도는 $0.27{\mu}m$에서 $0.12{\mu}m$로 감소하였다. 이형제의 함량을 1.8 wt%에서 3.6 wt%로 증가시켰을 경우에는 이형제가 주로 표면에 존재하고 표면조도를 증가시키는 것을 확인하였다. 저수축제의 함량을 5.0 wt%에서 9.0 wt%로 증가시킴에 따라 굴곡탄성율과 충격강도가 약 30% 감소하였다.

• The Journal of Advanced Prosthodontics
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• 제7권2호
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• pp.85-92
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• 2015

PURPOSE. This study aimed to investigate the efficacy of cleaning solutions on saliva-contaminated zirconia in comparison to air-abrasion in terms of resin bonding. MATERIALS AND METHODS. For saliva-contaminated air-abraded zirconia, seven cleaning methods)-no contamination (NC), water-spray rinsing (WS), additional air-abrasion (AA), and cleaning with four solutions (Ivoclean [IC]; 1.0 wt% sodium dodecyl sulfate [SDS], 1.0 wt% hydrogen peroxide [HP], and 1.0 wt% sodium hypochlorite [SHC])-were tested. The zirconia surfaces for each group were characterized using various analytical techniques. Three bonded resin (Panavia F 2.0) cylinders (bonding area: $4.5mm^2$) were made on one zirconia disk specimen using the Ultradent jig method [four disks (12 cylinders)/group; a total of 28 disks]. After 5,000 thermocycling, all specimens were subjected to a shear bond strength test with a crosshead speed of 1.0 mm/minute. The fractured surfaces were observed using an optical and scanning electron microscope (SEM). RESULTS. Contact angle measurements showed that groups NC, AA, IC, and SHC had hydrophilic surfaces. The X-ray photoelectron spectroscopy (XPS) analysis showed similar elemental distributions between group AA and groups IC and SHC. Groups IC and SHC showed statistically similar bond strengths to groups NC and AA (P>.05), but not groups SDS and HP (P<.05). For groups WS, SDS, and HP, blister-like bubble formations were observed on the surfaces under SEM. CONCLUSION. Within the limitations of this in vitro study, some of the cleaning solutions (IC or SHC) were effective in removing saliva contamination and enhancing the resin bond strength.