• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권4호
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• pp.159-163
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• 2003

ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

• Carbon letters
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• 제12권1호
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• pp.8-15
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• 2011

We study the relationships between the thermal emissivity of nuclear graphites (IG-110, PCEA, IG-430 and NBG-18) and their surface structural change by oxidation using scanning electron microscope and X-ray diffraction (XRD). The nonoxidized (0% weight loss) specimen had the surface covered with glassy materials and the 5% and 10% oxidized specimens, however, showed high roughness of the surface without glassy materials. During oxidation the binder materials were oxidized first and then graphitic filler particles were subsequently oxidized. The 002 interlayer spacings of the non-oxidized and the oxidized specimens were about $3.38{\sim}3.39{\AA}$. There was a slight change in crystallite size after oxidation compared to the nonoxidized specimens. It was difficult to find a relationship between the thermal emissivity and the structural parameters obtained from the XRD analysis.

• Journal of Magnetics
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• 제17권2호
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• pp.96-99
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• 2012

The change of saturation magnetization in boronized low carbon microalloyed steels was investigated as a function of boronizing time. Specimens were boronized in an electrical resistance furnace for times ranging from 3 to 9 h at 1123 K. The metallurgical and magnetic properties of the specimens were investigated using optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and vibrating sample magnetometry (VSM). A boride layer with saw-tooth morphology consisting of FeB and $Fe_2B$ was observed on the surface, its thickness ranged from 63 ${\mu}m$ to 140 ${\mu}m$ depending on the boronizing time. XRD confirmed the presence of $Fe_2B$ and FeB on the surface. The saturation magnetization decreased with increasing boronizing time. This decrease was attributed to the increased thickness of the FeB and $Fe_2B$ phases. Cracks were observed at the FeB/$Fe_2B$ interfaces of the samples. The number of interfacial cracks increased with increasing boronizing time.

• 공업화학
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• 제26권6호
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• pp.743-745
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• 2015

본 연구에서는 실온에서 간단히 염기의 양을 조절함으로서 세 가지 종류의 서로 다른 형태의 비결정질의 cobalt phosphate를 합성하였다. 합성된 샘플의 결정성과 형태를 X-Ray Diffraction (XRD)과, Scanning Electron Microscopy (SEM)를 통하여 확인하였으며, sodium borohydride의 수소발생 불균일 촉매로서 적용하였다. 촉매들 중에서 실온에서 합성한 비결정질의 cobalt phosphate 중에서 염기의 양이 가장 적은 10 nm 이하의 얇은 판상 형태의 촉매가 표면적이 넓어 가장 좋은 수소 발생 촉매활성을 보였다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.786-788
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• 2013

몰리브덴(Molybdenum) 박막은 높은 전기전도성을 가진 금속으로 CIGS계 태양전지의 후면전극으로 많이 사용되고 있다. 스퍼터링법을 통해 증착되는 몰리브덴 박막의 경우, 전기 전도성 및 기판과의 밀착성은 스퍼터 전력 및 압력과 같은 공정 조건에 따라 변화된다. 본 연구에서는 DC 마그네트론 스퍼터링법을 이용하여 몰리브덴 박막을 Ar 가스 분위기에서 압력별로 증착하였다. SEM(scanning electron microscope), XRD(X-ray Diffraction), 4-point probe, 광반사율, Hall measurement를 이용하여 박막의 전기적, 구조적 특성을 분석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.41-46
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• 2002

In this work, we studied electrical characteristics and leakage current mechanism of Au/$Ta_2O_5$/Si metal-oxide-semiconductor (MOS) devices. $Ta_2O_5$ thin film (63nm) was deposited by atomic layer deposition (ALD) method at temperature of $235^{\circ}C$. The structures of the $Ta_2O_5$ thin films were examined by X-Ray Diffraction (XRD). From XRD, the structure of $Ta_2O_5$ was single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current-voltage (I-V) characteristics of $Ta_2O_5$ thin film was studied from 300 to 423 K. In ohmic region (<0.5 MVcm${-1}$), the resistivity was $2.4056{\times}10^{14}({\Omega}cm)$ at 348 K. The Schottky emission is dominant in lower temperature range from 300 to 323 K and Poole-Frenkel emission dominant in higher temperature range from 348 to 423 K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.83-83
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• 2011

본 연구에서는 p-type Si (100) 위에 분자선 에피택시 성장방법으로 ZnO 완충층이 삽입된 ZnO 박막을 성장시켰다. ZnO 완충층은 Zn 셀 셔터의 열림/닫힘을 반복하는 성장 멈춤법으로 성장되었다. Zn 셀 셔터의 열림 시간은 4분, 2분, 1분이며 닫힘 시간은 2분으로 동일하게 유지하였다. 이러한 과정은 각각 5, 10, 20회로 반복되었으며 ZnO 완충층을 성장한 후 ZnO 박막은 기존의 분자선 에피택시 방법으로 성장되었다. ZnO 박막의 구조적, 광학적 특성은 field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL)로 조사하였다. SEM 측정결과 성장 멈춤 횟수가 증가함에 따라 ZnO 박막의 표면은 섬(island) 구조에서 미로(maze) 구조로 변화하였고, XRD 측정결과 full-width at half-maximum (FWHM) 이 감소하고 결정립 크기(grain size)가 증가하였다. 그리고 PL 측정결과 성장 멈춤 횟수가 증가함에 따라 near-band-edge emission (NBE) 피크의 세기가 증가하였고 deep-level emission (DLE) 피크의 위치는 오렌지 발광에서 녹색 발광으로 청색편이(blue-shift)하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.92-95
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• 2014

In this work we have synthesized ZnS:Mn nanocrystals (NCs) using a simple one step thermochemical method. $Zn(NO_3)_2$ and $Na_2S_2O_3$ were used as the precursors and $Mn(NO_3)_2$ was the source of impurity. Thioglycolic acid (TGA) was used as the capping agent and the catalyst of the reaction. The structure and optical property of the NCs were characterized by means of X- ray diffraction (XRD), HRTEM, UV-visible optical spectroscopy and photoluminescence (PL). X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses demonstrated cubic phase ZnS:Mn NCs with an average size around 3 nm. Synthesized NCs exhibited band gap of about 4 eV. Photoluminescence spectra showed a yellow-orange emission with a peak located at 585 nm, demonstrating the Mn incorporation inside the ZnS particles.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.34.2-34.2
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• 2009

The silver sulphide (Ag2S) thin films have been chemically deposited from an alkaline medium (pH 8 to 10) by using a silver nitrate and thiourea as a Ag and S ion precursor sources. Ethylene Damine tetraacetic acid (EDTA) was used as a complexing agent. The effect of annealing atmosphere such as Ar, N2+H2S and O2 on the structural, morphological and optical properties of Ag2S thin films has been studied. The annealed films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques for the structural, morphological, and optical properties, respectively. XRD studies reveal that the as-deposited thin films are polycrystalline with monoclinic crystal structure, is converted in to silver oxide after air annealing. The surface morphology study shows that grains are uniformly distributed over the entire surface of the substrate. Optical absorption study shows the as-deposited Ag2S thin films with band gap energy of 0.92eV and after air annealing it is found to be 2.25 eV corresponding to silver oxide thin films.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.760-765
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• 2011

Znic sulfide (ZnS) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The substrate temperature varied from room temperature (RT) to $500^{\circ}C$. The structural and optical properties of ZnS films were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive analysis of X-ray (EDAX) and UV-visible transmission spectra. The XRD analyses reveal that ZnS films have cubic structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM images indicate that ZnS films deposited at $400^{\circ}C$ have nano-sized grains with a grain size of ~ 67 nm. Then films exhibit relatively high transmittance of 80% in the visible region, with an energy band gap of 3.71 eV. One obvious result is that the energy band gap of the film increases with increasing the substrate temperatures.