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A Study on the Electrical Properties of $Ta_2O_{5}$ Thin Films by Atomic Layer Deposition Method in MOS Structure  

이형석 (고려대학교 전기공학과)
장진민 (고려대학교 전기공학과)
임장권 (고려대학교 전기공학과)
하만효 (고려대학교 전기공학과)
김양수 (고려대학교 전기공학과)
송정면 (고려대학교 전기공학과)
문병무 (고려대학교 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.52, no.4, 2003 , pp. 159-163 More about this Journal
Abstract
ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.
Keywords
Metal-Oxide-Semiconductor capacitor; Atomic Layer Deposition Method; Scanning Electron Microscopy; X-Ray Diffraction;
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Times Cited By KSCI : 2  (Citation Analysis)
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