• Title/Summary/Keyword: X-Ray diffraction measurement

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Formation of Vanadium-based Ohmic Contacts to n-GaN (n-GaN/vanadium-based Ohmic 접촉 형성)

  • Song, June-O;Leem, Dong-Seok;Kim, Sang-Ho;Seong, Tae-Yeon
    • Korean Journal of Materials Research
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    • v.13 no.9
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    • pp.567-571
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    • 2003
  • We investigate vanadium (V)-based Ohmic contacts on n-GaN ($N_{d}$=$2.0${\times}$10^{18}$ $cm^{-3}$ ) as a function of annealing temperature. It is shown that the V (60 nm) contacts become Ohmic with specific contact resistances of $10^{-3}$ $- 10^{-4}$$\textrm{cm}^2$ upon annealing at 650 and $850^{\circ}C$. The V(20 nm)/Ti(60 nm)/Au(20 nm)contacts produce very low specific contact resistances of $2.2 ${\times}$ 10^{-5}$ and$ 4.0${\times}$10^{-6}$$\textrm{cm}^2$ when annealed at 650 and $850{\circ}C$, respectively. A comparison shows that the use of the overlayers (Ti/Au) is very effective in improving Ohmic property. Based on the current-voltage measurement, Auger electron spectroscopy, glancing angle X-ray diffraction, and X-ray photoemission spectroscopy results, the possible mechanisms for the annealing temperature dependence of the Ohmic behavior of the V-based contacts are described and discussed.d.

Pressure Sensing Properties of AlN Thin Films Sputtered at Room Temperature

  • Seok, Hye-Won;Kim, Sei-Ki;Kang, Yang-Koo;Lee, Youn-Jin;Hong, Yeon-Woo;Ju, Byeong-Kwon
    • Journal of Sensor Science and Technology
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    • v.23 no.2
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    • pp.94-98
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    • 2014
  • Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

Electrical and Optical Properties of Solution-Based Sb-Doped SnO2 Transparent Conductive Oxides Using Low-Temperature Process (저온 공정을 이용한 용액 기반 Sb-doped SnO2 투명 전도막의 전기적 및 광학적 특성)

  • Koo, Bon-Ryul;Ahn, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.24 no.3
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    • pp.145-151
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    • 2014
  • Solution-based Sb-doped $SnO_2$ (ATO) transparent conductive oxides using a low-temperature process were fabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological, electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order to investigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer, and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and optical transmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with two sol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperature process ($300^{\circ}C$) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATO thin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at $300^{\circ}C$C exhibited the superb electrical (${\sim}7.25{\times}10^{-3}{\Omega}{\cdot}cm$) and optical transmittance (~83.1 %) performances.

Electrical and Optical Properties of F-Doped SnO2 Thin Film/Ag Nanowire Double Layers (F-Doped SnO2 Thin Film/Ag Nanowire 이중층의 전기적 및 광학적 특성)

  • Kim, Jong-Min;Koo, Bon-Ryul;Ahn, Hyo-Jin;Lee, Tae-Kun
    • Korean Journal of Materials Research
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    • v.25 no.3
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    • pp.125-131
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    • 2015
  • Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

Adhesive Behaviors of the Aluminum Alloy-Based CrN and TiN Coating Films for Ocean Plant

  • Murakami, Ri-Ichi;Yahya, Syed Qamma Bin
    • International Journal of Ocean System Engineering
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    • v.2 no.2
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    • pp.106-115
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    • 2012
  • In the present study, TiN and CrN films were coated by arc ion plating equipment onto aluminum alloy substrate, A2024. The film thickness was about 4.65 ${\mu}m$. TiN and CrN films were analyzed by X-ray diffraction and energy dispersive X-ray equipments. The Young's modulus and the micro-Vickers hardness of aluminum substrate were modified by the ceramic film coatings. The difference in Young's modulus between substrate and coating film would affect on the wear resistance. The critical load, Lc, was 75.8 N for TiN and 85.5 N for CrN. It indicated from the observation of optical micrographs for TiN and CrN films that lots of cracks widely propagated toward the both sides of scratch track in the early stage of MODE I. TiN film began to delaminate completely at MODE II stage. The substrate was finally glittered at MODE III stage. For CrN film, a few crack can be observed at MODE I stage. The delamination of film was not still occurred at MODE II and then was happened at MODE III. This agrees with critical load measurement which the adhesive strength was greater for CrN film than for TiN film. Consequently, it was difficult for CrN to delaminate because the adhesive strength was excellent against Al substrate. The wear process, which the film adheres and the ball transfers, could be enhanced because of the increase in loading. The wear weight of ball was less for CrN than for TiN. This means that the wear damage of ball was greater for TiN than for CrN film. It is also obvious that it was difficult to delaminate because the CrN coating film has high toughness. The coefficient of friction was less for CrN coating film than for TiN film.

Physical Properties of Mg0.05Zn0.95O Thin Films Grown by Sol-Gel Method According to Types of Indium Precursors (졸-겔법으로 성장시킨 Mg0.05Zn0.95O 박막의 Indium 전구체의 종류에 따른 물성에 관한 연구)

  • Choi, Hyo Jin;Lee, Min Sang;Kim, Hong Seung;Ahn, Hyung Soo;Jang, Nak Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.4
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    • pp.256-261
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    • 2021
  • Indium-doped Mg0.05Zn0.95O thin films were deposited on glass substrates by a sol-gel method. Three types of indium precursors such as indium chloride, indium acetate, and indium nitrate were used as doping sources. Physical properties of fabricated thin films were analyzed through XRD (x-ray diffraction), UV-vis spectrophotometer, Hall effect measurement, and EDS (energy dispersive x-ray spectroscopy). All In-doped thin films grown in this study exhibited a preferred orientation of (002) with over 80% transmittance. The results showed that the Mg0.05Zn0.95O thin film from indium chloride as the indium precursor has higher crystallinity and transmittance with lower resistivity when compared with those from other indium precursors.

Hydriding Kinetics on Mg2NiHx-5wt% CaO Composites (Mg2NiHx-5wt% CaO 복합재료의 수소화 속도)

  • SHIN, HYO-WON;HWANG, JUNE-HYEON;KIM, EUN-A;HONG, TAE-WHAN
    • Transactions of the Korean hydrogen and new energy society
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    • v.32 no.3
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    • pp.156-162
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    • 2021
  • Mg hydride has a relatively high hydrogen storage amount of 7.6wt%, and inexpensive due to abundant resources, but has high reaction temperature and long reaction time because of treble oxidation reactivity and upper activation energy. Their range of applications could be further extended if their hydrogenation kinetics and degradation behavior could be improved. Therefore, the effect of CaO has improved the hydrogenation kinetics and slowed down the degradation. This study focused on investigating whether to improve the hydrogenation kinetics by synthesizing Mg2NiHx-5wt% CaO composites. The Mg2NiHx-5wt% CaO composites have been synthesized by hydrogen induced mechanical alloying. The synthesized composites were characterized by performing X-ray diffraction, Scanning Electron Microscopy, Brunauer-Emmett-Teller, Thermogravimetric, and Sivert's type automatic pressure-composition-temperature analysis. Hydriding kinetics were performed using an automatic PCT measurement system and evaluated over the temperature range of 423 K, 523 K, and 623 K. As a result of calculating the hydrogen adsorption amount through the hydrogenation kinetics curve, it was calculated as about 0.42wt%, 0.91wt%, and 1.15wt%, the highest at 623 K and the lowest at 423 K.

Synthesis and Characterization of Non-precious Metal Co-PANI-C Catalysts for Polymer Electrolyte Membrane Fuel Cell Cathodes (고분자 전해질 연료전지 캐소드용 코발트-폴리아닐린-탄소로 구성된 비귀금속 촉매의 제조 및 특성 평가)

  • Choi, Jong-Ho
    • Journal of the Korean Electrochemical Society
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    • v.16 no.1
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    • pp.52-58
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    • 2013
  • In order to overcome the cost issue for commercialization of polymer electrolyte membrane fuel cell (PEMFC), this research was conducted for replacing platinum cathode catalyst with non-precious metal catalyst. The non-precious metal catalyst (Co-PANI-C) was synthesized by the simple reduction method with polyaniline (PANI), carbon black, and cobalt precursor without any heat treatment. Characterization of new Co-PANI-C composite catalysts was done by the measurement of X-ray diffraction (XRD) and thermogravimetric analysis (TGA) for structure analysis and performed by rotating disk electrode (RDE) and rotating ring disk electrode (RRDE) for electrochemical analysis. As a result, Co-PANI-C catalyst showed 60 mV lower on-set potential for oxygen reduction reaction (ORR) than Pt/C catalyst, but the overall reduction current of Co-PANI-C catalysts by ORR was still smaller than that of Pt/C. In addition, the ORR behavior of Co-PANI-C catalysts depending on the rotation speed of electrode and the stability of Co-PANI-C catalyst under potential cycling and the performance of fuel cell conditions are also discussed.

Electrical and Magnetic Properties of Magnetite Powder during a Verwey Transition (Verwey 전이와 마그네타이트의 전기적 및 자기적 특성)

  • Yoon, Sunghyun
    • New Physics: Sae Mulli
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    • v.68 no.12
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    • pp.1302-1307
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    • 2018
  • The crystallographic, electrical and magnetic behaviors of magnetite powder in the vicinity of its Verwey transition were investigated in this study. Magnetite was prepared by synthesizing a nanoparticle precursor and then annealing it at $800^{\circ}C$ for 1 h under a dynamic vacuum. Crystallographic and morphology analyses were done by using scanning electron microscope (SEM) and X-ray diffraction (XRD). The electrical and the magnetic properties were examined by using $M{\ddot{o}}ssbauer$ spectroscopy, vibrating sample magnetometer (VSM) and resistivity measurement. Both the magnetic moment and the resistivity showed discontinuous changes at the Verwey transition temperature ($T_V$). The temperature dependence of magnetic anisotropy constant showed a monotonic decrease with increasing temperature, with slight dip near $T_V$. $M{\ddot{o}}ssbauer$ spectra showed the superposition of two sextets, one from the tetrahedral (A) and the other from the octahedral (B) sites. The results revealed that identical charge states existed in the B site at temperatures both above and below $T_V$. A coordination crossover resulted in a transition from an inverse to a normal spinel at or close to $T_V$.

Comparative Crystal Chemistry of Exchanged by Cs-, Cd-, Pb-, and Sr-synthetic Mordenite Using High Resolution X-ray Powder Diffraction (고분해능 X-선 분말 회절을 이용한 Cs-, Cd-, Pb-, Sr-으로 치환된 합성 모데나이트의 격자상수 비교 연구)

  • Lee, Soojin;Lee, Hyunseung;Seoung, Donghoon;Kim, Pyosang;Kim, Hyeonsu;Lee, Yongmoon
    • Korean Journal of Mineralogy and Petrology
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    • v.35 no.3
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    • pp.345-353
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    • 2022
  • This study aimed to fundamentally understand changes of cell parameters of cation-exchanged mordenites using high resolution X-ray powder diffraction for studies that immobilization of various heavy metal cation using synthesis mordenite (Na6.6Al6.6Si41.4O96·20.4H2O, Na-MOR). As a results of measurement by Thermogravimetric analysis (TGA), it was confirmed that 19.4, 20.4 water molecules per unit cell were present in monovalent-cation substituted MOR (Cs-MOR, Na-MOR), and 21, 23.1, 23.2 water molecules per unit cell were present in divalent-cation substituted MOR (Pb-MOR, Sr-MOR, Cd-MOR). The space group of all the samples were identified as Cmcm belonging to the orthorhombic crystal system. Compared to Na-MOR, starting material, relative peak intensity of (110) and (200) is significantly changed after cation substitution whereas peak position is almost similar. Also, (220) peak that was not found in Na-MOR was clearly observed in Pb-, Cd- and Sr-exchanged MOR. Thus, it was estimated that changes of atomic distribution usually occurred on ab-plane while changes of cell parameters were little. Detailed changes in the cell parameters of cation-exchanged mordenites were derived from whole profile fitting method using the GSAS suite program. Changes in the axial lengths and unit cell volume of cation substitution showed different relationship depending on ionic radius and charge number. In case of monovalent-cation substituted MOR, the length of a-axis increases whereas the length of b- and c-axis decrease by absorbed cation radius. In the case of divalent-cation exchanged MOR, the length of a-axis usually decreases while the length of b- and c-axis increases by cation radius. It was confirmed that unit cell volume of monovalent and divalent cation substituted MORs had an independent tendency by cation radius.