• 한국식생활문화학회지
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• 제8권1호
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• pp.55-62
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• 1993

These studies were conducted to: a) investigate work patterns and productivity indices, b) rate performance levels of employees and c) determine the suggested levels of personnel and labor hours for the effective labor control in school foodservice. Eighteen elementary school foodservices in Seoul were selected in order to analyze work patterns by the work sampling methodology. Allowance time and performance rating by VTR observation was done to determine the standardized labor hours. The results were as follows. The average percentage of each work function of the total work functions such as direct work function, indirect work function and delay were 65.57%, 8.12%, 26.31% respectively. The productivity index is 0.92 min/meal. The average working and delay hours per week of the foodservice director, foodservice employees and supply person were 33.64 hours, 23.25 hours, 38.52 hours respectively. The percentage of delay hours of total labor hours for foodservice employees and supply person were 42.27% and 24.0%. The standardized work hours and the appropriate levels of foodservice employees of 17 elementary school foodservices were examined: The average rating of the foodservice employees work was 1.19 and British Insulated Calendarer Cables (BICC) allowance rate was 19.40% on the average. The total work hours of foodservice employees were 172.64 hours per week and levels of personnel were 4.53 persons. BICC allowance rate was applied: The standardized work hours per week was 180.95 hours and appropriate levels of personnel were 4.11 persons based on legal 44 working hours.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2013년도 춘계 학술논문 발표대회
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• pp.162-163
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• 2013

A temporary work are lifting equipment that tower crane or lift, and temporary architectures that office building and storage in construction site. And it is main construction work that built and used temporarily like to a scaffolding, a walk plate, and a formwork. This study is to adjust breakdown structure of temporary work to introduce technical tendency. With a site manager, it is collected a detailed statement and compared. As a result to break down a tendency that temporary equipment, additional function, and direct work of temporary technique, first, existing detail technical indexes that group I, group J, group K, and group L are classified. Second, due to set up and manage to main agents in case of existing detail technical indexes that B1, B2, it is not wrong to classify. But, it is somewhat different, and therefore adjust it to same level. Finally, as a technical tendency that temporary equipment, additional function, and direct work of temporary technique, it is adjusted the others.

• 한국재료학회지
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• 제18권9호
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• pp.503-506
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• 2008

The effect of silver nanoparticles (NPs) incorporation on the electronic properties of poly (3, 4-ethylenedioxythiphene) : poly(styrenesulfonate) (PEDOT : PSS) films was investigated. The surface of silver NPs was stabilized with trisodium citrate to control the size of silver NPs and prevent their aggregation. We obtained ca. 5 nm sized silver NPs and dispersed NPs in PEDOT : PSS solution. Sheet resistance, surface morphology, bonding state, and work function values of the PEDOT : PSS films were modified by silver NPs incorporation as well as annealing temperature. Sodium in silver NPs solution could lead to a decrease of work function of PEDOT : PSS; however, large content of silver NPs have an effect on the increase in work function, resulting from charge localization on the silver NPs and a decrease in the number of charge-trapping-related defects by chemical bond formation.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.29-34
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• 2008

In this paper, we investigated electrical and physical characteristics of nickel silicide using rare-earth metals(Er, Yb, Tb, Dy), Incorporated Ytterbium into Ni-silicide is proposed to reduce work function of Ni-silicide for nickel silicided schottky barrier diode (Ni-silicided SBD). Nickel silicide makes ohmic-contact or low schottky barrier height with p-type silicon because of similar work function (${\phi}_M$) in comparison with p-type silicon. However, high schottky barrier height is formed between Ni-silicide and p-type substrate by depositing thin ytterbium layer prior to Ni deposition. Even though the ytterbium is deposited below nickel, ternary phase $Yb_xN_{1-x}iSi$ is formed at the top and inner region of Ni-silicide, which is believed to result in reduction of work function about 0.15 - 0.38 eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.156-161
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• 2015

In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects of variations of the device’s key electrical parameters, such as threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, oncurrent, leakage current and on/off current ratio are presented and analyzed. We will also describe some simulation results related to the influence of the gate work function variations on the considered structure. These variations have a direct impact on the electrical device characteristics. The results show that the threshold voltage decreases when we reduce the gate metal work function Φ_m. As a consequence, the behavior of the leakage current improves with increased Φ_m. Therefore, the short channel effects in real 3-D FinFET structures can reasonably be controlled and improved by proper adjustment of the gate metal work function.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.157-159
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• 2005

MOS capacitors were fabricated to study electrical and chemical properties of Ta-Mo metal alloy with $ZrO_2$. The work function of Ta-Mo alloy were varied from 4.1eV to 5.1eV by controlling the composition. When the atomic composition of Mo is 10%, good thermal stability up to $800^{\circ}C$ was observed and work function of MOS capacitor was 4.1eV, compatible for NMOS application. But pure Ta exhibited very poor thermal stability. After $600^{\circ}C$ annealing, equivalent oxide thickness of tantalum gate MOS capacitor was continuously decreased. Barrier heights of Ta-Mo alloy and pure metal that supported the work function values were calculated from Fowler-Nordheim analysis. As a result of these electrical?experiments, Ta-Mo metal alloy with $ZrO_2$ is excellent gate electrode for NMOS.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2022년도 추계학술대회
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• pp.118-120
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• 2022

본 논문은 M3D(Monolithic 3-Dimension) Inverter의 소자 구조에서 메탈 게이트의 WFV(Work-function Variation)의 영향에 따른 임계전압의 변화에 대하여 조사했다. 또한 PMOS 위에 NMOS가 적층된 인버터의 전기적 상호작용에 따른 임계전압의 변화를 조사하기 위해 PMOS에 0과 1 V의 전압을 인가하여 전기적 상호작용을 조사하였다. 사용된 메탈 게이트의 평균 일함수에 대한 임계전압의 변화량은 0.1684 V로 측정되었고, 표준편차는 0.00079 V가 조사 되었다.

• 한국진공학회지
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• 제12권1호
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• pp.16-19
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• 2003

실온에서 p-InP (100) 위에 이온빔 증착법으로 Ni 박막을 성장하였다. Ni 박막의 이차전자방출계수(${\gamma}$)와 일함수를 결정하기 위하여 Ne, Ar, $N_2$, Xe 이온원을 사용하여 가속전압에 따른 $\gamma$를 측정하였다. 여러 가지 기체와 집속이온빔장치의 가속전압에 따른 $\gamma$결과로부터 Ni 박막의 일함 수를 결정하였다. p-InP (100) 위에 성장한 Ni 박막의 일함수는 5.8 eV ~ 5.85 eV 이었다. 실험을 통하여 얻어진 결과들은 실온에서 p-InP (100) 위에 성장한 Ni 박막의 전자적 성질에 관한 중요한 정보를 제공하고 있다.

• 한국진공학회지
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• 제2권2호
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• pp.166-170
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• 1993

자외선-광전자-분광법(UPS)를 이용하여 저온(40K)으로 유지된 Si(111)-7${\times}$7 표면에 산소를 노출시킨 후 잰 평균 일함수가 제논-흡착-광전자 분광법(PAX)을 이용하여 잰 동일 표면의 변화된 부분의 국부 일함수보다 약 0.4V 가량 높은 것을 발견하였다. 이는 Si(111)-7${\times}$7 표면의 초기 산화 단계에서 커다란 일함수 변화를 유도하는 요인은 표면에 분자상태로 흡착된 산소임을 시사한다. 또한 Xe 3d 및 5p 에너지 밀도곡선들의 이동으로부터 변화된 부분의 일함수가 변화되지 않은 부분의 일함수보다 0.6eV 높은 것을 알 수 있었다.