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http://dx.doi.org/10.4313/JKEM.2008.21.1.029

Electrical and Physical Characteristics of Nickel Silicide using Rare-Earth Metals  

Lee, Won-Jae (삼성전자(주) 시스템 LSI사업부)
Kim, Do-Woo (한국폴리텍여자대학 디지털디자인과)
Kim, Yong-Jin (매그나칩 반도체 SMS사업부)
Jung, Soon-Yen (충남대학교 전자공학과)
Wang, Jin-Suk (충남대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.1, 2008 , pp. 29-34 More about this Journal
Abstract
In this paper, we investigated electrical and physical characteristics of nickel silicide using rare-earth metals(Er, Yb, Tb, Dy), Incorporated Ytterbium into Ni-silicide is proposed to reduce work function of Ni-silicide for nickel silicided schottky barrier diode (Ni-silicided SBD). Nickel silicide makes ohmic-contact or low schottky barrier height with p-type silicon because of similar work function (${\phi}_M$) in comparison with p-type silicon. However, high schottky barrier height is formed between Ni-silicide and p-type substrate by depositing thin ytterbium layer prior to Ni deposition. Even though the ytterbium is deposited below nickel, ternary phase $Yb_xN_{1-x}iSi$ is formed at the top and inner region of Ni-silicide, which is believed to result in reduction of work function about 0.15 - 0.38 eV.
Keywords
Ni-silicide; SALICIDE; Work function; Schottky barrier diode (SBD);
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