• Journal of the Optical Society of Korea
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• v.20 no.6
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• pp.669-677
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• 2016

A miniaturized FTIR spectrometer based on lamellar grating interferometry is being developed for passive remote-sensing. Consisting of a pair of micro-mirror arrays, the lamellar grating can be fabricated using MEMS technology. This paper describes a method to compute the optical field in the interferometer to optimize the design parameters of the lamellar grating FTIR spectrometer. The lower limit of the micro-mirror width in the grating is related to the formation of a Talbot image in the near field and is estimated to be about $100{\mu}m$ for the spectrometer to be used for the wavelength range of $7-14{\mu}m$. In calculating the far field at the detection window, the conventional Fraunhofer equation is inadequate for detection distance of our application, misleading the upper limit of the micro-mirror width to avoid interference from higher order diffractions. Instead, the far field is described by the unperturbed plane-wave combined with the boundary diffraction wave. As a result, the interference from the higher order diffractions turns out to be negligible as the micro-mirror width increases. Therefore, the upper limit of the micro-mirror width does not need to be set. Under this scheme, the interferometer patterns and their FT spectra are successfully generated.

• Korean Journal of Cleft Lip And Palate
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• v.4 no.2
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• pp.69-78
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• 2001

Alveolar cleft exists in 75% of cleft patients, In alveolar cleft patients, alar base is widening, palatal fistular formation, maxillary growth disturbance & tooth loss of adjacent area is raised, Alveolar bone grafting, especially iliac bone grafting, is a general treatment method. As operation timing, bone grafting is classified with primary, early secondary, secondary, & late secondary, Here we report cleft width, marginal bone height, bone resorption rate, grafted shape & bone densities after secondary iliac bone grafting was done in the Dept. of oral and maxillofacial surgery of chonbuk national university hospital. We compared cleft width to bone resorption rate and grafted shape. Also, alveolar bone densities of grafted and contralateral site was compared with Emago 3 package? (Oral Diagonostic System, The Netherlands), The data obtained were analyzed using Spearman's rho coefficients and sign test with SPSS for window, The results were obtained as follows. 1. As alveolar cleft width is increase, bone resorption rate is, too. This relation showed significant difference(P<.01). 2, In proximal & distal area, alvolar cleft width and bone graft contour after bone grafting had a reverse proportional difference. It was not significant difference(P>.05). 3. After 3 month, in bone density results by using Emago 3 package? with periapical standard view, occlusal view & panoramic view, differences between grafted bone and alveolar bone of contralateral site didn't show a significant difference(P>.05). Thus, differences of bone densities in the alveolar bones didn't exist.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.254.2-254.2
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• 2014

The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

• The Journal of Sustainable Design and Educational Environment Research
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• v.17 no.3
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• pp.26-34
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• 2018

This research is a pre-research to find out profit module of 20 students in a classroom. I researched the widths of passages in the 30 classrooms of 5 elementary schools in Nothern Kyeonggi-do. I found the conclusions as follows. 1st, the area of 1 student's unit is $650(W){\times}950(D)$ 2nd, most of classrooms' students table placements are one-way types(77%). U-types are 13%. group study-types are 7% 3rd, The width between blackboard and front student's table is 2.08m. The width of passage between back seat and backboard is 1.12m. The width of passage between side wall and near student's table is 0.89m. The width of passage between window and near student's table is 0.74m. The width of vertical passage(A) between student's tables is 0.68m. The width of vertical passage(B) between student's tables is 0.7m. 4th, The area of teachers' is $2.1m{\sim}2.25m{\times}2.1m=4.41{\sim}4.73m^2$

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1657-1662
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• 2014

In this paper, the impact of substrate bias($V_{BS}$) on the zero capacitor RAM(Z-RAM) in n-channel junctionless multiple gate MOSFET(MuGFET) has been analyzed experimentally. Junctionless transistors with fin width of 50nm and 1 fin exhibits a memory window of 0.34V and a sensing margin of $1.8{\times}10^4$ at $V_{DS}=3.5V$ and $V_{BS}=0V$. As the positive $V_{BS}$ is applied, the memory window and sensing margin were improved due to an increase of impact ionization. When $V_{BS}$ is increased from 0V to 10V, not only the memory window is increased from 0.34V to 0.96V but also sensing margin is increased slightly. The sensitivity of memory window with different $V_{BS}$ in junctionless transistor was larger than that of inversion-mode transistor. A retention time of junctionless transistor is better than that of inversion-mode transistor due to low Gate Induced Drain Leakage(GIDL) current. To evaluate the device reliability of Z-RAM, the shifts in the Set/Reset voltages and current were measured.

• The Korean Journal of Nuclear Medicine
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• v.39 no.3
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• pp.163-173
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• 2005

Purpose: Abutted scatter energy windows used for a triple energy window (TEW) method may provide wrong estimation of scatter. This study is to propose an extended TEW (ETEW) method, which doesn't require abutted scatter energy windows and overcomes the shortcomings of TEW method. Materials & Methods: The ETEW is a modification of the TEW which corrects for scatter by using abutted scatter rejection windows, which can overestimate or underestimate scatter. The ETEW is compared to the TEW using Monte Carlo simulated data for point sources as well as hot and cold spheres in a cylindrical water phantom. Various main energy window widths (10 %, 15 % and 20 %) were simulated. Both TEW and ETEW improved image contrast, % recovery coefficients and normalized standard deviation. Results: Both of TEW and ETEW improved image contrast and % recovery coefficients. Estimated scatter components by the TEW were not proportional to the true scatter components over the main energy windows when ones of 10 %, 15 %, and 20 % were simulated. The ETEW linearly estimated scatter components over the width of the main energy windows. Conclusion: We extended the TEW method into the method which could linearly estimate scatter components over the main energy windows.

• Journal of the Korean housing association
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• v.26 no.6
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• pp.147-155
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• 2015

The purpose of this study is to understand the characteristic elements of interior space which effects the basic floor plan of traditional houses, in Huizhou, CHINA. The field study for the content analysis of a interior space of traditional houses were conducted from August 16 to 21, 2015, in Xidicun & Hongcun village. The major characteristics of 'tang' interior were as follows; Firstly, all of traditional houses in a skylight that front of 'tang'. Several types of floor plan were fixed by a combination of the space layout and numbers between 'tang' and skylights. Secondly, 'Tang' is from 3,250 to 6,000 mm in width, from 3,800 to 7,800 mm in depth. All skylights are more length than 'tang' in width. So all of spacious 'tang' were very bright without any lighting fixtutes. Thirdly, the patterns of woodcuts were the major settings of interior decorations. All of a window and door, capital has a detail woodcuts that are flowers, animals, plants, peoples, vases, and geometric patterns. In the last analysis, the traditional housing designs in Huizhoui old villages were planned for family that everlasting life, made a functional and rational decision.

• Corrosion Science and Technology
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• v.9 no.1
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• pp.1-7
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• 2010

Cost reduction of products is and will always be a key objective of industrials. However, it is well identified that the wiping process reaches its limits at high line speed in general and especially thin coatings. If wiping models predict that it is possible to reach 32-37 g/$m^2$ of pure Zinc at 180 m/min provided the nozzle to strip distance can be reduced to 6mm, the possibility to reach that process window industrially with sufficient robustness is debated. 3 key problems are reviewed and analyzed: Zinc splashing and liquid drop emissions of various forms, the production of skimming and the noise generated by the nozzles. The available data and models are firstly used to predict phenomena. Secondly, videos and pictures from the lines showing what really happens on the edges especially in case of a strip width change are analyzed. Whereas the predicted level of skimming to remove from the pot is expected very high, it turns out that the target may be very close to the full splashing phenomena and that the most critical industrial situation is related to strip specification changes. It is then expected that the industrial feasibility of the 32-37 g/$m^2$ at 180 m/min will depend strongly on the amount of incoming strip with the same width that can be processed continuously.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.91-96
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• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

• The Journal of Sustainable Design and Educational Environment Research
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• v.19 no.4
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• pp.60-69
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• 2020

This research is a preliminary study to find out the module of 20 students in a classroom. This research investigated the widths of passages in the 30 classrooms of 5 elementary schools in Namyangju City, Korea. The conclusions were as follows: First, the area of unit for 1 student was 650 (W) × 950 (D). Second, the desk placements for most classrooms were one-way types (87%), and group-study types constituted 13%. Third, the width between the blackboard and the very front desk was 2.17 m. The width of passage between the very back seat and the backside lockers was 1.32 m. The width of passage between the sidewall and the nearby desk was 0.8 m. The width of passage between the window and the nearby desk was 0.8 m. The average widths of 2 vertical passages between the desks were respectively 0.67 m and 0.68 m. Fourth, the area of the teacher was 2.1-2.25 m × 2.16 m = 4.5-4.8 ㎡.