Abstract
The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.