• 제목/요약/키워드: Wide-gap materials

검색결과 144건 처리시간 0.027초

Structure and Property Modification of Bimodal Molecular Weight Distribution Polyethylene by Electron Beam Irradiation

  • Lee, Sang-Man;Jeon, Hye-Jin;Choi, Sun-Woong;Song, Hyun-Hoon;Nho, Young-Chang;Cho, Kyu-Cheol
    • Macromolecular Research
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    • 제14권6호
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    • pp.640-645
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    • 2006
  • Polyethylene of bimodal molecular weight distribution was irradiated with an electron beam. The thermal and mechanical properties were examined by DSC, small and wide angle X-ray scattering and static tensile test according to the crystal morphology of the irradiated samples. The crystal morphology change upon irradiation, as revealed by wide angle X-ray scattering, correlated well with the changes in melting enthalpy, whereas the lamellar thickness and the amorphous gap thickness remained virtually unchanged at irradiation doses up to 500 kGy. Crosslinks in the crystal domains became evident at an energy level of 250 kGy, resulting in reduced crystallinity and crystal size of the (110) and (200) planes. The samples became stiff and brittle with increased irradiation dose, which seem to be more relevant to the amount of cross links than the crystal morphology changes.

Efficient and color stable phosphorescent White Organic light emitting devices using ultra wide band gap host materials

  • Lee, Jong-Hee;Lee, Jeong-Ik;Song, Ki-Im;Lee, Su-Jin;Chu, Hye-Yong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1116-1119
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    • 2008
  • We developed phosphorescent white OLEDs with high efficiency and color stability. By engineering device architecture in which confined excitons within the emissive layer by using adequate interlayer and balanced recombination of charge carriers by using stepwise hole transporting layer system, these WOLEDs showed power efficacy of 43.6 lm/W with CRI = 62 and 36 lm/W with CRI = 72 at $100\;cd/m^2$ without outcoupling enhancements.

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Highly Efficient Green Phosphorescent Organic Light Emitting Diodes

  • Lee, Se-Hyung;Park, Hyung-Dol;Kang, Jae-Wook;Kim, Hyong-Jun;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.496-498
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    • 2008
  • We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high quantum efficiency. Wide-energy-gap material, 1,1-bis[(di-4-tolylamino) phenyl]cyclohexane (TAPC), with high triplet energy level was used as a hole transporting layer. Electrophosphorescent devices fabricated using TAPC as a hole-transporting layer and N,N'-dicarbazolyl-4,4'-biphenyl (CBP) doped with fac-tris(2-phenylpyridine) iridium [Ir(ppy)3] as the emitting layer showed the maximum external quantum efficiency ($\eta_{ext}$) of 19.8 %, which is much higher than the devices adopting 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (NPB) (${\eta}B_{ext}=14.6%$) as a hole transporting layer.

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Recessed-gate 4H-SiC MESFET의 DC특성에 관한 연구 (Study on DC Characteristics of 4H-SiC Recessed-Gate MESFETs)

  • 박승욱;황웅준;신무환
    • 한국재료학회지
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    • 제13권1호
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    • pp.11-17
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    • 2003
  • DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.

Variation in optical, dielectric and sintering behavior of nanocrystalline NdBa2NbO6

  • Mathai, Kumpamthanath Chacko;Vidya, Sukumariamma;Solomon, Sam;Thomas, Jijimon Kumpukattu
    • Advances in materials Research
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    • 제2권2호
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    • pp.77-91
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    • 2013
  • High quality nanoparticles of neodymium barium niobium ($NdBa_2NbO_6$) perovskites have been synthesized using an auto ignition combustion technique for the first time. The nanoparticles thus obtained have been characterized by powder X-ray diffraction, thermo gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy and transmission electron microscopy. UV-Visible absorption and photoluminescence spectra of the samples are also recorded. The structural analysis shows that the nano powder is phase pure with the average particle size of 35 nm. The band gap determined for $NdBa_2NbO_6$ is 3.9 eV which corresponds to UV-radiation for optical inter band transition with a wavelength of 370nm. The nanopowder could be sintered to 96% of the theoretical density at $1325^{\circ}C$ for 2h. The ultrafine cuboidal nature of nanopowders with fewer degree of agglomeration improved the sinterability for compactness at relatively lower temperature and time. During the sintering process the wide band gap semiconducting behavior diminishes and the material turns to a high permittivity dielectric. The microstructure of the sintered surface was examined using scanning electron microscopy. The striking value of dielectric constant ${\varepsilon}_r=43$, loss factor tan ${\delta}=1.97{\times}10^{-4}$ and the observed band gap value make it suitable for many dielectric devices.

차세대 파워디바이스 SiC/GaN의 산업화 및 학술연구동향 (Commercialization and Research Trends of Next Generation Power Devices SiC/GaN)

  • 조만;구영덕
    • 에너지공학
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    • 제22권1호
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    • pp.58-81
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    • 2013
  • 탄화규소(SiC)나 질화갈륨(GaN)과 와이드갭 반도체를 이용한 전력소자의 생산기술이 크게 발전하여 그간 널리 사용되어 온 실리콘(Si) 전력소자와 비교하여 작동전압, 스위칭 속도 및 on-저항 등이 크게 향상되어 몇 개 기업은 제품화를 시작하였다. 내압 등 기술적 과제 등을극복하여 산업화를 하고자하는 움직임을 소개하고 아울러 연구동향도 분석한다.

Influence of the Fluorine-doping Concentration on Nanocrystalline ZnO Thin Films Deposited by Sol-gel Process

  • Yoon, Hyunsik;Kim, Ikhyun;Kang, Daeho;Kim, Soaram;Kim, Jin Soo;Son, Jeong-Sik;Leem, Jae-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.204.2-204.2
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    • 2013
  • Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.

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Numerical simulation of a single bubble suspension in polyol resin

  • Dongjin Seo;Lim, Yun-Mee;Youn, Jae-Ryoun
    • 한국섬유공학회:학술대회논문집
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    • 한국섬유공학회 2003년도 The Korea-Japan Joint Symposium
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    • pp.47-48
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    • 2003
  • Dilute bubble suspensions are prepared by introducing carbon dioxide bubbles into polyol resin. The apparent shear viscosity is measured with a wide gap parallel plate rheometer. A numerical simulation for deformation of a single bubble suspended in a Newtonian fluid is conducted by using a finite volume method (FVM) where multigrid algorithms are incorporated. Transient and steady results of bubble deformation were obtained and were in good agreement with experimental results. At high capillary number, viscosity of the suspension increases as the volume fraction increases, while at low capillary number, the viscosity decreases as the volume fraction increases.

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Implantable and Flexible GaN LED for Biomedical Applications

  • 이건재
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.17.1-17.1
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    • 2011
  • Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as a type of implantable LED biosensor and as a therapy tool.

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대기압 플라즈마를 이용한 산화물 박막 트랜지스터 표면처리에 관한 연구 (The Study of Improvement in the Characteristics of Oxide Thin Film Transistor by using Atmospheric Pressure Plasma)

  • 김가영;김경남;염근영
    • 한국표면공학회지
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    • 제48권1호
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    • pp.7-10
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    • 2015
  • Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet solution. In the case of the method using wet solution, process is very simple, however, annealing process should be included. In this study, to overcome the problem of annealing process, atmospheric pressure plasma was used for annealing, and the electrical characteristics such as on/off ration and mobility of device were investigated.