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http://dx.doi.org/10.5695/JKISE.2015.48.1.007

The Study of Improvement in the Characteristics of Oxide Thin Film Transistor by using Atmospheric Pressure Plasma  

Kim, Ga Young (School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU))
Kim, Kyong Nam (School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU))
Yeom, Geun Young (School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU))
Publication Information
Journal of the Korean institute of surface engineering / v.48, no.1, 2015 , pp. 7-10 More about this Journal
Abstract
Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet solution. In the case of the method using wet solution, process is very simple, however, annealing process should be included. In this study, to overcome the problem of annealing process, atmospheric pressure plasma was used for annealing, and the electrical characteristics such as on/off ration and mobility of device were investigated.
Keywords
Plasma; Oxide TFT; IGZO;
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