Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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The Study of Improvement in the Characteristics of Oxide Thin Film Transistor by using Atmospheric Pressure Plasma

대기압 플라즈마를 이용한 산화물 박막 트랜지스터 표면처리에 관한 연구

  • Kim, Ga Young (School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU)) ;
  • Kim, Kyong Nam (School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU)) ;
  • Yeom, Geun Young (School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU))
  • 김가영 (성균관대학교 신소재공학부) ;
  • 김경남 (성균관대학교 신소재공학부) ;
  • 염근영 (성균관대학교 신소재공학부)
  • Received : 2015.02.15
  • Accepted : 2015.02.20
  • Published : 2015.02.28
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Abstract

Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet solution. In the case of the method using wet solution, process is very simple, however, annealing process should be included. In this study, to overcome the problem of annealing process, atmospheric pressure plasma was used for annealing, and the electrical characteristics such as on/off ration and mobility of device were investigated.

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References

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