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http://dx.doi.org/10.3740/MRSK.2003.13.1.011

Study on DC Characteristics of 4H-SiC Recessed-Gate MESFETs  

Park, Seung-Wook (Chip Pac Korea, R & D Center)
Hwang, Ung-Jun (Swmiconductor Materials/Devices Lab., Department of Ceramic Engineering Myoug Ji University)
Shin, Moo-Whan (Swmiconductor Materials/Devices Lab., Department of Ceramic Engineering Myoug Ji University)
Publication Information
Korean Journal of Materials Research / v.13, no.1, 2003 , pp. 11-17 More about this Journal
Abstract
DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.
Keywords
Wide band-gap semiconductors; SiC; Schottky contact; MESFET; I-V Characteristics; Modeling;
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