• Macromolecular Research
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• v.14 no.6
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• pp.640-645
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• 2006

Polyethylene of bimodal molecular weight distribution was irradiated with an electron beam. The thermal and mechanical properties were examined by DSC, small and wide angle X-ray scattering and static tensile test according to the crystal morphology of the irradiated samples. The crystal morphology change upon irradiation, as revealed by wide angle X-ray scattering, correlated well with the changes in melting enthalpy, whereas the lamellar thickness and the amorphous gap thickness remained virtually unchanged at irradiation doses up to 500 kGy. Crosslinks in the crystal domains became evident at an energy level of 250 kGy, resulting in reduced crystallinity and crystal size of the (110) and (200) planes. The samples became stiff and brittle with increased irradiation dose, which seem to be more relevant to the amount of cross links than the crystal morphology changes.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1116-1119
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• 2008

We developed phosphorescent white OLEDs with high efficiency and color stability. By engineering device architecture in which confined excitons within the emissive layer by using adequate interlayer and balanced recombination of charge carriers by using stepwise hole transporting layer system, these WOLEDs showed power efficacy of 43.6 lm/W with CRI = 62 and 36 lm/W with CRI = 72 at $100\;cd/m^2$ without outcoupling enhancements.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.496-498
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• 2008

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high quantum efficiency. Wide-energy-gap material, 1,1-bis[(di-4-tolylamino) phenyl]cyclohexane (TAPC), with high triplet energy level was used as a hole transporting layer. Electrophosphorescent devices fabricated using TAPC as a hole-transporting layer and N,N'-dicarbazolyl-4,4'-biphenyl (CBP) doped with fac-tris(2-phenylpyridine) iridium [Ir(ppy)3] as the emitting layer showed the maximum external quantum efficiency ($\eta_{ext}$) of 19.8 %, which is much higher than the devices adopting 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (NPB) (${\eta}B_{ext}=14.6%$) as a hole transporting layer.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.11-17
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• 2003

DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.

• Advances in materials Research
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• v.2 no.2
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• pp.77-91
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• 2013

High quality nanoparticles of neodymium barium niobium ($NdBa_2NbO_6$) perovskites have been synthesized using an auto ignition combustion technique for the first time. The nanoparticles thus obtained have been characterized by powder X-ray diffraction, thermo gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy and transmission electron microscopy. UV-Visible absorption and photoluminescence spectra of the samples are also recorded. The structural analysis shows that the nano powder is phase pure with the average particle size of 35 nm. The band gap determined for $NdBa_2NbO_6$ is 3.9 eV which corresponds to UV-radiation for optical inter band transition with a wavelength of 370nm. The nanopowder could be sintered to 96% of the theoretical density at $1325^{\circ}C$ for 2h. The ultrafine cuboidal nature of nanopowders with fewer degree of agglomeration improved the sinterability for compactness at relatively lower temperature and time. During the sintering process the wide band gap semiconducting behavior diminishes and the material turns to a high permittivity dielectric. The microstructure of the sintered surface was examined using scanning electron microscopy. The striking value of dielectric constant ${\varepsilon}_r=43$, loss factor tan ${\delta}=1.97{\times}10^{-4}$ and the observed band gap value make it suitable for many dielectric devices.

• Journal of Energy Engineering
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• v.22 no.1
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• pp.58-81
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• 2013

Recently, the technological progress in manufacturing power devices based on wide bandgap materials, for example, silicon carbide(SiC) or gallium nitride(GaN), has resulted in a significant improvement of the operating-voltage range and switching speed and/or specific on resistance compared with silicon power devices. This paper will give an overview of the status on The Next generation Power Devices such as SiC/GaN with a focus on commercialization and research.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.204.2-204.2
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• 2013

Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.

• Proceedings of the Korean Fiber Society Conference
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• 2003.10a
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• pp.47-48
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• 2003

Dilute bubble suspensions are prepared by introducing carbon dioxide bubbles into polyol resin. The apparent shear viscosity is measured with a wide gap parallel plate rheometer. A numerical simulation for deformation of a single bubble suspended in a Newtonian fluid is conducted by using a finite volume method (FVM) where multigrid algorithms are incorporated. Transient and steady results of bubble deformation were obtained and were in good agreement with experimental results. At high capillary number, viscosity of the suspension increases as the volume fraction increases, while at low capillary number, the viscosity decreases as the volume fraction increases.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.17.1-17.1
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• 2011

Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as a type of implantable LED biosensor and as a therapy tool.

• Journal of the Korean institute of surface engineering
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• v.48 no.1
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• pp.7-10
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• 2015

Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet solution. In the case of the method using wet solution, process is very simple, however, annealing process should be included. In this study, to overcome the problem of annealing process, atmospheric pressure plasma was used for annealing, and the electrical characteristics such as on/off ration and mobility of device were investigated.