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A 10-bit 20-MHz CMOS A/D converter (10-bit 20-MHz CMOS A/D 변환기)

  • 최희철;안길초;이승훈;강근순;이성호;최명준
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.4
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    • pp.152-161
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    • 1996
  • In tis work, a three-stage pipelined A/D converter (ADC) was implemented to obtain 10-bit resolution at a conversion rate of 20 msamples/s for video applications. The ADC consists of three identical stages employing a mid-rise coding technique. The interstage errors such as offsets and clock feedthrough are digitally corrected in digitral logic by one overlapped bit between stages. The proposed ADC is optimized by adopting a unit-capacitor array architecture in the MDAC to improve the differential nonlinearity and the yield. Reduced power dissipation has been achieve dby using low-power latched comparators. The prototype was fabricated in a 0.8$\mu$m p-well CMOS technology. The ADC dissipates 160 mW at a 20 MHz clock rate with a 5 V single supply voltage and occupies a die area of 7 mm$^{2}$(2.7 mm $\times$ 2.6mm) including bonding pads and stand-alone internal bias circuit. The typical differential and integral nonlinarities of the prototype are less than $\pm$ 0.6 LSB and $\pm$ 1 LSB, respectively.

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A 12-b Asynchronous SAR Type ADC for Bio Signal Detection

  • Lim, Shin-Il;Kim, Jin Woo;Yoon, Kwang-Sub;Lee, Sangmin
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.2
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    • pp.108-113
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    • 2013
  • This paper describes a low power asynchronous successive approximation register (SAR) type 12b analog-to-digital converter (ADC) for biomedical applications in a 0.35 ${\mu}m$ CMOS technology. The digital-to-analog converter (DAC) uses a capacitive split-arrays consisting of 6-b main array, an attenuation capacitor C and a 5-b sub array for low power consumption and small die area. Moreover, splitting the MSB capacitor into sub-capacitors and an asynchronous SAR reduce power consumption. The measurement results show that the proposed ADC achieved the SNDR of 68.32 dB, the SFDR of 79 dB, and the ENOB (effective number of bits) of 11.05 bits. The measured INL and DNL were 1.9LSB and 1.5LSB, respectively. The power consumption including all the digital circuits is 6.7 ${\mu}W$ at the sampling frequency of 100 KHz under 3.3 V supply voltage and the FoM (figure of merit) is 49 fJ/conversion-step.

A 40 MHz to 280 MHz 32-phase CMOS 0.11-${\mu}m$ Delay-Locked Loop (40MHz ~ 280MHz의 동작 주파수와 32개의 위상을 가지는 CMOS 0.11-${\mu}m$ 지연 고정 루프)

  • Lee, Kwang-Hun;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.95-98
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    • 2012
  • This paper describes a multiphase delay-locked loop (DLL) that generates a 32-phase output clock over the operating frequency range of 40 MHz to 280 MHz. The matrix-based delay line is used for high resolution of 1-bit delay. A calibration scheme, which improves the linearity of a delay line, is achieved by calibrating the nonlinearity of the input stage of the matrix. The multi-phase DLL is fabricated by using 0.11-${\mu}m$ CMOS process with a 1.2 V supply. At the operating frequency of 125MHz, the measurement results shows that the DNL is less than +0.51/-0.12 LSB, and the measured peak-to-peak jitter of the multi-phase DLL is 30 ps with input peak-to-peak jitter of 12.9 ps. The area and power consumption of the implemented DLL are $480{\times}550{\mu}m^2$ and 9.6 mW at the supply voltage of 1.2 V, respectively.

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Design of a 2.5V 10-bit 300MSPS CMOS D/A Converter (2.5V 10-bit 300MSPS 고성능 CMOS D/A 변환기의 설계)

  • Kwon, Dae-Hoon;Song, Min-Kyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.7
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    • pp.57-65
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    • 2002
  • In this paper, a 2.5V 10-bit 300MSPS CMOS D/A Converter is described. The architecture of the D/A Converter is based on a current steering 8+2 segmented type, which reduces non-linearity error and other secondary effects. In order to achieve a high performance D/A Converter, a novel current cell with a low spurious deglitchnig circuit and a novel inverse thermomeer decoder are proposed. To verify the performance, it is integrated with $0.25{\mu}m$ CMOS 1-poly 5-metal technology. The effective chip area is $1.56mm^2$ and power consumption is about 84mW at 2.5V power supply. The simulation and experimental results show that the glitch energy is 0.9pVsec at fs=100MHz, 15pVsec at fs=300MHz in worst case, respectively. Further, both of INL and DNL are within ${\pm}$1.5LSB, and the SFDR is about 45dB when sampling, frequency, is 300MHz and output frequency is 1MHz.

A 12 bit 750 kS/s 0.13 mW Dual-sampling SAR ADC

  • Abbasizadeh, Hamed;Lee, Dong-Soo;Yoo, Sang-Sun;Kim, Joon-Tae;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.760-770
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    • 2016
  • A 12-bit 750 kS/s Dual-Sampling Successive Approximation Register Analog-to-Digital Converter (SAR ADC) technique with reduced Capacitive DAC (CDAC) is presented in this paper. By adopting the Adaptive Power Control (APC) technique for the two-stage latched type comparator and using bootstrap switch, power consumption can be reduced and overall system efficiency can be optimized. Bootstrapped switches also are used to enhance the sampling linearity at a high input frequency. The proposed SAR ADC reduces the average switching energy compared with conventional SAR ADC by adopting reduced the Most Significant Bit (MSB) cycling step with Dual-Sampling of the analog signal. This technique holds the signal at both comparator input asymmetrically in sample mode. Therefore, the MSB can be calculated without consuming any switching energy. The prototype SAR ADC was implemented in $0.18-{\mu}m$ CMOS technology and occupies $0.728mm^2$. The measurement results show the proposed ADC achieves an Effective Number-of-Bits (ENOB) of 10.73 at a sampling frequency of 750 kS/s and clock frequency of 25 MHz. It consumes only 0.13 mW from a 5.0-V supply and achieves the INL and DNL of +2.78/-2.45 LSB and +0.36/-0.73 LSB respectively, SINAD of 66.35 dB, and a Figures-of-Merit (FoM) of a 102 fJ/conversion-step.

A 125 MHz CMOS Phase-Locked Loop with 51-phase Output Clock (51-위상 출력 클럭을 가지는 125 MHz CMOS 위상 고정 루프)

  • Lee, Pil-Ho;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.343-345
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    • 2013
  • This paper describes a phase-locked loop (PLL) that generates a 51-phase clock with the operating frequency of 125MHz. To generate 51-phase clock with a frequency of 125 MHz, the proposed PLL uses three voltage controlled oscillators (VCOs) which are connected by resistors. Each VCO consists of 17 delay-cells. An resistor averaging scheme, which makes three VCOs to connect with each other, makes it possible to generates 51-phase clock of the same phase difference. The proposed PLL is designed by using 65 nm CMOS process with a 1.0 V supply. At the operating frequency of 125 MHz, the simulated DNL and peak-to-peak jitter are +0.0016/-0.0020 LSB and 1.07 ps, respectively. The area and power consumption of the implemented PLL are $290{\times}260{\mu}m^2$ and 2.5 mW, respectively.

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Design of a 10 bit Low-power current-mode CMOS A/D converter with Current predictors (전류예측기를 이용한 10비트 저전력 전류구동 CMOS A/D 변환기 설계)

  • 심성훈;권용복;윤광섭
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.10
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    • pp.22-29
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    • 1998
  • In this paper, an 10 bit current-mode CMOS A/D converter with a current predictor is designed with a CMOS process to be integrated into a portable image signal processing system. A current predictor let the number of comparator reduce to 70 percent compared with the two step flash architecture. The current magnitude of current reference is reduced to 68 percent with a modular current reference. The designed 10 bit Low-power current-mode CMOS A/D converter with a current predictor is simulated with HSPICE using 0.6$\mu\textrm{m}$ N-well single-poly triple-metal CMOS process parameters. It results in a conversion rate of 10MSamples/s. A power consumption is measured to be 94.4mW at single +5V supply voltage. The 10 bit A/D converter fabricated using the same process occupies the chip area of 1.8mm x 2.4mm.

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A Range-Scaled 13b 100 MS/s 0.13 um CMOS SHA-Free ADC Based on a Single Reference

  • Hwang, Dong-Hyun;Song, Jung-Eun;Nam, Sang-Pil;Kim, Hyo-Jin;An, Tai-Ji;Kim, Kwang-Soo;Lee, Seung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.2
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    • pp.98-107
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    • 2013
  • This work describes a 13b 100 MS/s 0.13 um CMOS four-stage pipeline ADC for 3G communication systems. The proposed SHA-free ADC employs a range-scaling technique based on switched-capacitor circuits to properly handle a wide input range of $2V_{P-P}$ using a single on-chip reference of $1V_{P-P}$. The proposed range scaling makes the reference buffers keep a sufficient voltage headroom and doubles the offset tolerance of a latched comparator in the flash ADC1 with a doubled input range. A two-step reference selection technique in the back-end 5b flash ADC reduces both power dissipation and chip area by 50%. The prototype ADC in a 0.13 um CMOS demonstrates the measured differential and integral nonlinearities within 0.57 LSB and 0.99 LSB, respectively. The ADC shows a maximum signal-to-noise-and-distortion ratio of 64.6 dB and a maximum spurious-free dynamic range of 74.0 dB at 100 MS/s, respectively. The ADC with an active die area of 1.2 $mm^2$ consumes 145.6 mW including high-speed reference buffers and 91 mW excluding buffers at 100 MS/s and a 1.3 V supply voltage.

A 250MS/s 8 Bit CMOS folding and Interpolating AD Converter with 2 Stage Architecture (2단 구조를 사용한 250MS/s 8비트 CMOS 폴딩-인터폴레이팅 AD 변환기)

  • 이돈섭;곽계달
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.4
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    • pp.826-832
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    • 2004
  • A CMOS 8 bit folding and interpolating ADC for an embedded system inside VLSI is presented in this paper. This folding ADC uses the 2 stage architecture for improving of nonlinearity. repeating the folding and interpolating twice. At a proposed structure, a transistor differential pair operates on the second folder. A ADC with 2 stage architecture reduces the number of comparators and resisters. So it is possible to provide small chip size, low power consumption and high operating speed. The design technology is based on fully standard 0.25m double-Poly 2 metal n-well CMOS Process. The simulated Power consumption is 45mW with an applied voltage of 2.5V and sampling frequency of 250MHz. The INL and DNL are within <ㅆㄸㅌ>$\pm$0.2LSB, respectively. The SNDR is approximately 45dB for input frequency of 10MHz.

Design of Phase Locked Loop (PLL) based Time to Digital Converter for LiDAR System with Measurement of Absolute Time Difference (LiDAR 시스템용 절대시간 측정을 위한 위상고정루프 기반 시간 디지털 변환기 설계)

  • Yoo, Sang-Sun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.25 no.5
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    • pp.677-684
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    • 2021
  • This paper presents a time-to-digital converter for measuring absolute time differences. The time-to-digital converter was designed and fabricated in 0.18-um CMOS technology and it can be applied to Light Detection and Ranging system which requires long time-cover range and 50ps time resolution. Since designed time-to-digital converter adopted the reference clock of 625MHz generated by phase locked loop, it could have absolute time resolution of 50ps after automatic calibration and its cover range was over than 800ns. The time-to-digital converter adopted a counter and chain delay lines for time measurement. The counter is used for coarse time measurement and chain delay lines are used for fine time measurement. From many times experiments, fabricated time-to-digital converter has 50 ps time resolution with maximum INL of 0.8 LSB and its power consumption is about 70 mW.