• 대한수학회보
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• 제53권4호
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• pp.1157-1169
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• 2016

We find the distributional solutions of the Wilson's functional equations $$u{\circ}T+u{\circ}T^{\sigma}-2u{\otimes}v=0,\\u{\circ}T+u{\circ}T^{\sigma}-2v{\otimes}u=0,$$ where $u,v{\in}{\mathcal{D}}^{\prime}({\mathbb{R}}^n)$, the space of Schwartz distributions, T(x, y) = x + y, $T^{\sigma}(x,y)=x+{\sigma}y$, $x,y{\in}{\mathbb{R}}^n$, ${\sigma}$ an involution, and ${\circ}$, ${\otimes}$ are pullback and tensor product of distributions, respectively. As a consequence, we solve the $Erd{\ddot{o}}s$' problem for the Wilson's functional equations in the class of locally integrable functions. We also consider the Ulam-Hyers stability of the classical Wilson's functional equations $$f(x+y)+f(x+{\sigma}y)=2f(x)g(y),\\f(x+y)+f(x+{\sigma}y)=2g(x)f(y)$$ in the class of Lebesgue measurable functions.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권1호
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• pp.37-50
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• 2009

Evaluation results about area scaling capabilities of various SRAM margin-assist techniques for random $V_T$ variability issues are described. Various efforts to address these issues by not only the cell topology changes from 6T to 8T and 10T but also incorporating multiple voltage-supply for the cell terminal biasing and timing sequence controls of read and write are comprehensively compared in light of an impact on the required area overhead for each design solution given by ever increasing $V_T$ variation (${\sigma}_{VT}$). Two different scenarios which hinge upon the EOT (Effective Oxide Thickness) scaling trend of being pessimistic and optimistic, are assumed to compare the area scaling trends among various SRAM solutions for 32 nm process node and beyond. As a result, it has been shown that 6T SRAM will be allowed long reign even in 15 nm node if ${\sigma}_{VT}$ can be suppressed to < 70 mV thanks to EOT scaling for LSTP (Low Standby Power) process.

• IMMUNE NETWORK
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• 제21권5호
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• pp.32.1-32.14
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• 2021

Over two hundred twenty-eight million cases of coronavirus disease 2019 (COVID-19) in the world have been reported until the 21^st of September 2021 after the first rise in December 2019. The virus caused the disease called severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2). Over 4 million deaths blame COVID-19 during the last one year and 8 months in the world. Currently, four SARS-CoV-2 variants of concern are mainly focused by pandemic studies with limited experiments to translate the infectivity and pathogenicity of each variant. The SARS-CoV-2 α, β, γ, and δ variant of concern was originated from United Kingdom, South Africa, Brazil/Japan, and India, respectively. The classification of SARS-CoV-2 variant is based on the mutation in spike (S) gene on the envelop of SARS-CoV-2. This review describes four SARS-CoV-2 α, β, γ, and δ variants of concern including SARS-CoV-2 ε, ζ, η, ι, κ, and B.1.617.3 variants of interest and alert. Recently, SARS-CoV-2 δ variant prevails over different countries that have 3 unique mutation sites: E156del/R158G in the N-terminal domain and T478K in a crucial receptor binding domain. A particular mutation in the functional domain of the S gene is probably associated with the infectivity and pathogenesis of the SARS-CoV-2 variant.

• 대한수학회논문집
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• 제16권4호
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• pp.621-626
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• 2001

Let { $A_{>o}$ t= exp(M log t)} $_{t}$ be a dilation group where M is a real n$\times$n matrix whose eigenvalues has strictly positive real part, and let $\rho$be an $A_{t}$ -homogeneous distance function defined on ( $R^{n}$ ). Suppose that K is a function defined on ( $R^{n}$ ) such that /K(x)/$\leq$ (No Abstract.see full/text) for a decreasing function defined on (t) on R+ satisfying where wo(x)=│log│log (x)ll. For f$\in$ $L_{1}$ ( $R^{n}$ ), define f(x)=sup t>0 Kt*f(x)=t-v K(Al/tx) and v is the trace of M. Then we show that \ulcorner is a bounded operator of $L_{-{1}( $R^{n}$ ) into $L^1$,$\infty$( $R^{n}$).

• 소성∙가공
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• 제24권1호
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• pp.44-51
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• 2015

The current study seeks to examine the effects of V and C additions on the mechanical and low thermal expansion properties of a high strength invar base alloy. The base alloy (Fe-36%Ni-0.9%Co-2.75%Mo-0.7Cr-0.23Mn-0.17Si-0.3%C, wt.%) contains $Mo_2C$ carbides, which form as the main precipitate. In contrast, alloys with additions of 0.4%V+0.3%C (alloy A) or 0.4%V+0.45%C (alloy B) contain $Mo_2C$+[V, Mo]C carbides. The average thermal expansion coefficients of these high strength invar based alloys were measured in the range of $5.16{\sim}5.43{\mu}m/m{\cdot}^{\circ}C$ for temperatures of $15{\sim}230^{\circ}C$. Moreover, alloy B showed lower thermal expansion coefficient than the other alloys in this temperature range. For the mechanical properties, the [V, Mo]C improved hardness and strengths(Y.S. and T.S.) of the high strength invar base alloy. T.S.(tensile strength) and Y.S.(yield strength) of hot forged alloy B specimen were measured at 844.6MPa and 518.0MPa, respectively. The tensile fractography of alloy B exhibited a ductile transgranular fracture mode and voids were initiated between the [V, Mo]C particles and the matrix. Superior properties of high strength and low thermal expansion coefficient can be obtained by [V, Mo]C precipitation in alloy B with the addition of 0.4%V and 0.45%C.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.356-362
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• 2004

Using multi wrapped copper by polyimide film for HTS transformer, the breakdown and V-t characteristics of two type models for turn-to-turn, one is point contact model, the other is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on V-t characteristics under at voltage as well as breakdown voltage under ac and impulse voltage in $LN_2$ was carried. Also, survival analysis was performed according to the Kaplan-Meier method. The breakdown voltages for surface contact model are lower than that of the point contact model, because the contact area of surface contact model is wider than that of point contact model. At the same time, the shape parameter of the point contact model is a little bit larger than the of the surface contact model. The time to breakdown tn is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

• 대한전기학회논문지
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• 제41권1호
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• pp.56-62
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• 1992

The GaAs bulk crystals are grown by the Synthesis Solute Diffusion(SSD) method and its properties are investigated. The crystal growth rate at optimum condition is 0.28 cm/day and their temperature dependence is R(T) = 2.92 x 10S04T exp(-1.548eV/kS1BTT) [cmS02T/day.K]. Etch pits density distribution along radial direction is order of 10S04TcmS0-2T and 10S03TcmS0-2T at the edge and middle of the wafers, respectively, and it increased exponentially along vertical direction of ingot. Moreover,it is uniformly distributed as order of 10S03TcmS0-2T in radial direction of In doped GaAs. The carrier concentration and mobilities are measured to 0.34-2.1 x 10S016T cmS0-3T and 2.3-3.3x10S03T cmS02T/V.sec, respectively.

• 한국인터넷방송통신학회논문지
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• 제13권1호
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• pp.143-152
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• 2013

주어진 그래프 G=(V,E), n=|V|, m=|E|에 대해 최소절단을 찾는 연구는 공급처 s와 수요처 t가 주어지지 않은 경우와 주어진 경우로 구분된다. s와 t가 주어지지 않은 무방향 가중 그래프에 대한 Stoer-Wagner 알고리즘은 임의의 정점을 고정시키고 최대 인접 순서로 나열하여 마지막 정점의 절단 값과 마지막 2개 정점을 병합하면서 정점을 축소시키는 방법으로 $\frac{n(n-1)}{2}$회를 수행한다. 또한, s와 t가 주어진 그래프에 대한 Ford-Fulkerson 알고리즘은 증대경로를 탐색하여 절단 간선을 결정한다. 더 이상의 증대 경로가 없으면 절단 간선들의 조합으로 최소절단을 결정해야 한다. 본 논문은 단일 s와 t가 주어진 무방향 가중 그래프에 대해 최대인접 병합과 절단값을 동시에 계산하는 방법으로 n-1회 수행으로 단축시켰다. 또한, Stoer-Wagner 알고리즘은 최소 절단을 기준으로 V=S+T로 양분하지 못할 수 있는데 반해 제안된 알고리즘은 정확히 양분시켰다. 제안된 알고리즘은 Ford-Fulkerson의 증대경로를 찾는 수행횟수보다 많이 수행하지만 수행과정에서 최소절단을 결정하는 장점이 있다.

• 대한화학회지
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• 제32권2호
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• pp.85-93
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• 1988

등유전상수 용매로 취급되는 MeOH-nitromethane, MeOH-nitrobenzene 및 MeOH-ethylene glycol 혼합용매 하에서 t-butyl halides (X = Cl, Br, I)의 가용매 분해반응을 연구 하였다. MeOH-NM 및 MeOH-NB에서 t-butyl halide의 가메탄올 분해반응 속도는 40~100 % (v/v) MeOH 조성에서 최대치를 보였다. 최대속도 현상은 용매의 극성-편극성과 수소결합 주게능력의 협력적인 결과로 설명하였다. Y값의 변화로 부터 극성-편극성과 수소 결합 주게능력의 협력적인 결과로 설명하였다. Y값의 변화로 부터 극성-편극성과 수소결합 주게능력이 기질의 반응성에 미치는 효과를 논의 하였다. E.G.에서 기질의 반응성은 MeOH에 비해 20배 이상 빠름을 보였으며 이는 아마도 E.G.의 특이한 용매구조에 기인 한다고 여겨 진다.

• Transactions on Electrical and Electronic Materials
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• 제5권2호
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• pp.50-54
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• 2004

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$－3/ eV/K) T$^2$/(2930＋T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag－, S－. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.