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http://dx.doi.org/10.4313/TEEM.2004.5.2.050

Properties of Photoluminescience for AgInS2/GaAs Epilayer Grown by Hot Wall Epitaxy  

Lee, Sang-Youl (Department of Physics, Chosun University)
Hong, Kwang-Joon (Department of Physics, Chosun University)
Publication Information
Transactions on Electrical and Electronic Materials / v.5, no.2, 2004 , pp. 50-54 More about this Journal
Abstract
The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$－3/ eV/K) T$^2$/(2930＋T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag－, S－. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.
Keywords
Hot-wall epitaxy; Optical absorption; Point defects; Annealing effects; Photoluminescience;
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