• 제목/요약/키워드: Ultraviolet-Nanoimprint Lithography

검색결과 23건 처리시간 0.031초

UV 나노임프린트 리소그래피 공정에서 레지스트 도포의 최적화를 통한 잔류층 두께의 최소화 (The Minimization of Residual Layer Thickness by using optimized dispensing method in UVnanoimprint Lithography Process)

  • 김기돈;정준호;심영석;이응숙;김지현;조영근;홍성철
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 춘계학술대회 논문집
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    • pp.633-636
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    • 2005
  • Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. As with other nanoimprint methods, ultraviolet-nanoimprint lithography (UV-NIL) resolution appears to be limited only by template resolution, and offers a significant cost of ownership reduction when compared to other next generation lithography (NGL) methods such as EUVL and 157 nm lithography. The purpose of this paper is to suggest optimum values of control parameters of Imprio 100 manufactured by Molecular Imprint, Inc., which is the first commercially available UV-NIL tool, for sound nanoimprint. UV-NIL experiments were performed on Imprio 100 to find dispensing recipe for avoiding air entrapment. Dispensing recipe related to residual layer thickness and uniformity was optimized and 40 nm thick residual layer was achieved.

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다중 디스펜싱 방법에 의한 UV-나노임프린트 리소그래피 (UV nanoimprint lithography using a multi-dispensing method)

  • 심영석;손현기;신영재;이응숙;정준호
    • 제어로봇시스템학회논문지
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    • 제10권7호
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    • pp.604-610
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    • 2004
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

4" Si 웨이퍼에 대한 single-step UV 나노임프린트 리소그래피 (Single-step UV nanoimprint lithography on a 4" Si wafer)

  • 정준호;손현기;심영석;신영재;이응숙;최성욱;김재호
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2003년도 춘계학술대회 논문집
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    • pp.199-202
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    • 2003
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.

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롤 기반 나노임프린트 리소그래피 시스템 기술 (Technology for Roll-based Nanoimprint Lithography Systems)

  • 임형준;이재종;최기봉;김기홍;이성휘
    • 한국기계가공학회지
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    • 제12권5호
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    • pp.1-8
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    • 2013
  • Roll-based, nanoimprint lithography (Roll-NIL) is one effective method to produce large-area nanopatterns continuously. Systems and processes for Roll-NIL have been developed and studied for more than 15 years. Since the shapes of the stamp and the substrate for Roll-NIL can be plates, films, and rolls, there exist many concepts to design and implement roll-NIL systems. Combinations and variations of contact-methods for variously shaped stamps and substrates are analyzed in this paper. The contact-area can be changed by using soft materials such as polydimethylsiloxane (PDMS) or silicone rubber. Ultraviolet (UV) sources appropriate for the roll-to-plate or roll-to-roll process are introduced. Finally, two roll-to-plate nanoimprint lithography systems are illustrated.

UV 나노임프린트 리소그래피용 UV 투과성 나노스탬프 제작 (UV transparent stamp fabrication for UV nanoimprint lithography)

  • 정준호;심영석;손현기;신영재;이응숙;허익범;권성원
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 춘계학술대회
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    • pp.1069-1072
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    • 2003
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising nanoimprint method for cost-effectively defining nanometer scale structures at room temperature and low pressure. Nanostamp fabrication technology is a key technology for UV-NIL because fabricating a high resolution nanostamp is the first step for defining high resolution nanostructures in a substrate. We used quartz as an UV transparent stamp material for the UVNIL. A $5{\times}5{\times}0.09$ inch stamp was fabricated using the quartz etch process in which Cr film was used as a hard mask for transferring nanostructures into the quartz. In this paper, we describe the quartz etching process and discuss the results including SEM images.

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EPS(Elementwise Patterned Stamp)를 이용한 UV 나노임프린트 공정에서 웨이퍼 변형에 따른 잔류층 분석 (Analysis of Nonniformity of Residual Layer Thickness on UV-Nanoimprint Using an EPS(Elementwise Patterned Stamp))

  • 김기돈;심영석;손현기;이응숙;이상찬;방영매;정준호
    • 대한기계학회논문집A
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    • 제29권9호
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    • pp.1169-1174
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    • 2005
  • Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.

Elememtwise Patterned stamp와 부가압력을 이용한 UV 나노임프린트 리소그래피 공정

  • 손현기;정준호;심영석;이응숙
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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    • pp.126-126
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    • 2004
  • 1996년 Chou 등이 개발한 가열방식의 나노임프린트 리소그래피(nanoimprint lithography, NIL)은 선폭 100nm 이하의 나노구조물을 경제적으로 제작할 수 있는 대표적인 나노패턴닝(nano-patterning) 공정으로 많은 기대가 모아지고 있으나, 열변형에 의해 다층정렬이 어렵다는 점과, 점도가 큰 레지스트(resist)를 임프린트하기 위해서는 고압(∼30 bar)이 필요하다 점 등의 문제점이 있다. 이를 해결할 수 있는 방법으로 UV 나노임프린트 리소그래피(ultraviolet nanoimprint lithography, UV-NIL)를 들 수 있다.(중략)

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불화 함유 다이아몬드 상 탄소 스탬프를 사용하는 UV 나노 임프린트 리소그래피 (UV-Nanoimprint Lithography Using Fluorine Doped Diamond-Like Carbon Stamp)

  • 정준호;알툰알리;나종주;최대근;김기돈;최준혁;이응숙
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2006년도 춘계학술대회 논문집
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    • pp.109-112
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    • 2006
  • A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

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UV 나노임프린트 리소그래피를 위한 불화 함유 다이아몬드 상 탄소 스탬프의 제작 (Fabrication of Fluorine Doped Diamond-Like Carbon Stamp for UV-Nanoimprint Lithography)

  • 알툰 알리;정준호;나종주;최대근;김기돈;이응숙
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.145-146
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    • 2006
  • A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

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UV-NIL(Ultraviolet-Nano-Imprinting-Lithography) 방법을 이용한 나노 패터닝기술 (Nano-patterning technology using an UV-NIL method)

  • 심영석;정준호;손현기;신영재;이응숙;최성욱;김재호
    • 한국진공학회지
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    • 제13권1호
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    • pp.39-45
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    • 2004
  • UV-나노임프린팅 (Ultraviolet-Nanoimprinting Lithography:UV-NIL) 공정 기술은 수십 나노에서 수 나노미터 크기의 구조물을 적은 비용으로 대량생산 할 수 있다는 장점을 가지고 있는 기술로 최근 전세계적으로 연구가 활발히 진행되고 있다. 본 연구에서는 반도체 공정 중 마스크 제작 공정을 이용하여 나노패턴을 가진 5${\times}$5${\times}$0.09 인치 크기의 수정스탬프(quartz stamp)를 제작하였고, 임프린팅 (imprinting)시에 레지스트(resist)와 스탬프(stamp) 사이에서 발생하는 점착현상(adhesion)을 방지하고자 그 표면에 Fluoroalkanesilane(FAS) 표면처리를 하였다. 웨이퍼의 평탄도를 개선하고 친수(hydrophilic) 상태의 표면을 만들기 위해 그 표면에 평탄화층을 스핀코팅하였고, 1 nl의 분해능을 가진 디스펜서(dispenser)를 이용하여 레지스트 액적을 도포하였다. 스템프 상의 패턴과 레지스트에 임프린트된 패턴은 SEM, AFM 등을 이용하여 측정하였으며, EVG620-NIL 장비를 이용한 임프린팅 실험에서 370 nm - 1 um 크기의 다양한 패턴을 가진 스탬프의 패턴들이 정확하게 레지스트에 전사됨을 확인하였다.