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http://dx.doi.org/10.3795/KSME-A.2005.29.9.1169

Analysis of Nonniformity of Residual Layer Thickness on UV-Nanoimprint Using an EPS(Elementwise Patterned Stamp)  

Kim Ki-Don (한국기계연구원 지능형정밀기계연구부)
Sim Young-Suk (한국기계연구원 지능형정밀기계연구부)
Sohn Hyonkee (한국기계연구원 첨단산업기술연구부)
Lee Eung-Sug (한국기계연구원 지능형정밀기계연구부)
Lee Sang-Chan (목포대학교 기계 해양시스템공학부)
Fang Lingmei (목포대학교 기계 해양시스템공학부)
Jeong Jun-Ho (한국기계연구원 지능형정밀기계연구부)
Publication Information
Transactions of the Korean Society of Mechanical Engineers A / v.29, no.9, 2005 , pp. 1169-1174 More about this Journal
Abstract
Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.
Keywords
UV-Nanoimprint; Elementwise Patterned Stamp; Wafer Deformation; Residual Layer;
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Times Cited By KSCI : 1  (Citation Analysis)
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