• Title/Summary/Keyword: Ultraviolet nanoimprint lithography

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The Minimization of Residual Layer Thickness by using optimized dispensing method in UVnanoimprint Lithography Process (UV 나노임프린트 리소그래피 공정에서 레지스트 도포의 최적화를 통한 잔류층 두께의 최소화)

  • Kim K.D.;Jeong J.H.;Sim Y.S.;Lee E.S.;Kim J.H.;Cho Y.K.;Hong S.C.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.633-636
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    • 2005
  • Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. As with other nanoimprint methods, ultraviolet-nanoimprint lithography (UV-NIL) resolution appears to be limited only by template resolution, and offers a significant cost of ownership reduction when compared to other next generation lithography (NGL) methods such as EUVL and 157 nm lithography. The purpose of this paper is to suggest optimum values of control parameters of Imprio 100 manufactured by Molecular Imprint, Inc., which is the first commercially available UV-NIL tool, for sound nanoimprint. UV-NIL experiments were performed on Imprio 100 to find dispensing recipe for avoiding air entrapment. Dispensing recipe related to residual layer thickness and uniformity was optimized and 40 nm thick residual layer was achieved.

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UV nanoimprint lithography using a multi-dispensing method (다중 디스펜싱 방법에 의한 UV-나노임프린트 리소그래피)

  • 심영석;손현기;신영재;이응숙;정준호
    • Journal of Institute of Control, Robotics and Systems
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    • v.10 no.7
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    • pp.604-610
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    • 2004
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

Single-step UV nanoimprint lithography on a 4" Si wafer (4" Si 웨이퍼에 대한 single-step UV 나노임프린트 리소그래피)

  • 정준호;손현기;심영석;신영재;이응숙;최성욱;김재호
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.199-202
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    • 2003
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.

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Technology for Roll-based Nanoimprint Lithography Systems (롤 기반 나노임프린트 리소그래피 시스템 기술)

  • Lim, Hyungjun;Lee, Jaejong;Choi, Kee-Bong;Kim, Geehong;Lee, Sunghwi
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.12 no.5
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    • pp.1-8
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    • 2013
  • Roll-based, nanoimprint lithography (Roll-NIL) is one effective method to produce large-area nanopatterns continuously. Systems and processes for Roll-NIL have been developed and studied for more than 15 years. Since the shapes of the stamp and the substrate for Roll-NIL can be plates, films, and rolls, there exist many concepts to design and implement roll-NIL systems. Combinations and variations of contact-methods for variously shaped stamps and substrates are analyzed in this paper. The contact-area can be changed by using soft materials such as polydimethylsiloxane (PDMS) or silicone rubber. Ultraviolet (UV) sources appropriate for the roll-to-plate or roll-to-roll process are introduced. Finally, two roll-to-plate nanoimprint lithography systems are illustrated.

UV transparent stamp fabrication for UV nanoimprint lithography (UV 나노임프린트 리소그래피용 UV 투과성 나노스탬프 제작)

  • Jeong, Jun-Ho;Sim, Young-Suk;Sohn, Hyon-Kee;Shin, Young-Jae;Lee, Eung-Suk;Hur, Ik-Boum;Kwon, Sung-Won
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.1069-1072
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    • 2003
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising nanoimprint method for cost-effectively defining nanometer scale structures at room temperature and low pressure. Nanostamp fabrication technology is a key technology for UV-NIL because fabricating a high resolution nanostamp is the first step for defining high resolution nanostructures in a substrate. We used quartz as an UV transparent stamp material for the UVNIL. A $5{\times}5{\times}0.09$ inch stamp was fabricated using the quartz etch process in which Cr film was used as a hard mask for transferring nanostructures into the quartz. In this paper, we describe the quartz etching process and discuss the results including SEM images.

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Analysis of Nonniformity of Residual Layer Thickness on UV-Nanoimprint Using an EPS(Elementwise Patterned Stamp) (EPS(Elementwise Patterned Stamp)를 이용한 UV 나노임프린트 공정에서 웨이퍼 변형에 따른 잔류층 분석)

  • Kim Ki-Don;Sim Young-Suk;Sohn Hyonkee;Lee Eung-Sug;Lee Sang-Chan;Fang Lingmei;Jeong Jun-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.29 no.9 s.240
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    • pp.1169-1174
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    • 2005
  • Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.

Elememtwise Patterned stamp와 부가압력을 이용한 UV 나노임프린트 리소그래피 공정

  • 손현기;정준호;심영석;이응숙
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.05a
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    • pp.126-126
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    • 2004
  • 1996년 Chou 등이 개발한 가열방식의 나노임프린트 리소그래피(nanoimprint lithography, NIL)은 선폭 100nm 이하의 나노구조물을 경제적으로 제작할 수 있는 대표적인 나노패턴닝(nano-patterning) 공정으로 많은 기대가 모아지고 있으나, 열변형에 의해 다층정렬이 어렵다는 점과, 점도가 큰 레지스트(resist)를 임프린트하기 위해서는 고압(∼30 bar)이 필요하다 점 등의 문제점이 있다. 이를 해결할 수 있는 방법으로 UV 나노임프린트 리소그래피(ultraviolet nanoimprint lithography, UV-NIL)를 들 수 있다.(중략)

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UV-Nanoimprint Lithography Using Fluorine Doped Diamond-Like Carbon Stamp (불화 함유 다이아몬드 상 탄소 스탬프를 사용하는 UV 나노 임프린트 리소그래피)

  • Jeong, Jun-Ho;Ozhan, Altun Ali;Rha, Jong-Joo;Choi, Dae-Geun;Kim, Ki-Don;Choi, Jun-Hyuk;Lee, Eung-Sug
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2006.05a
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    • pp.109-112
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    • 2006
  • A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

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Fabrication of Fluorine Doped Diamond-Like Carbon Stamp for UV-Nanoimprint Lithography (UV 나노임프린트 리소그래피를 위한 불화 함유 다이아몬드 상 탄소 스탬프의 제작)

  • Ozhan Altun Ali;Jeong Jun-Ho;Rha Jong-Joo;Choi Dae-Geun;Kim Ki-Don;Lee Eung-Sug
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.145-146
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    • 2006
  • A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

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Nano-patterning technology using an UV-NIL method (UV-NIL(Ultraviolet-Nano-Imprinting-Lithography) 방법을 이용한 나노 패터닝기술)

  • 심영석;정준호;손현기;신영재;이응숙;최성욱;김재호
    • Journal of the Korean Vacuum Society
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    • v.13 no.1
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    • pp.39-45
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    • 2004
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. A 5${\times}$5${\times}$0.09 in. quartz stamp is fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. FAS(Fluoroalkanesilane) is used as a material for anti-adhesion surface treatment on the stamp and a thin organic film to improve adhesion on a wafer is formed by spin-coating. The low viscosity resin droplets with a nanometer scale volume are dispensed on the whole area of the coated wafer. The UV-NIL experiments have been performed using the EVG620-NIL. 370 nm - 1 m features on the stamp have been transferred to the thin resin layer on the wafer using the multi-dispensing method and UV-NIL process. We have measured the imprinted patterns and residual layer using SEM and AFM to evaluate the potential of the process.