• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.56-64
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• 1992

Because of a small bandgap energy, a high doping density, and a low operating temperature, the dark current in HgCdTe photodiode is almost composed of a tunneling current. The tunneling current is devided into an indirect tunneling current via traps and a band-to-band direct tunneling current. The indirect tunneling current dominates the dark current for a relatively high temperature and a low reverse bias and forward bias. For a low temperature and a high reverse bias the direct tunneling current dominates. In this paper, to verify the tunneling currents in HgCdTe photodiode, the new tunneling-recombination equation via trap is introduced and tunneling-recombination current is calculated. The new tunneling-recombination equation via trap have the same form as SRH (Shockley-Read-Hall) generation-recombination equation and the tunneling effect is included in recombination times in this equation. Chakrabory and Biswas's equation being introduced, band to band direct tunneling current are calculated. By using these equations, HgCdTe (mole fraction, 0.29 and 0.222) photodiodes are analyzed. Then the temperature dependence of the tunneling-recombination current via trap and band to band direct tunneling current are shown and it can be known what is dominant current according to the applied bias at athe special temperature.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.7
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• pp.1617-1622
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• 2015

This paper analyzes the ratio of tunneling current for channel doping concentration of sub-10 nm asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current in subthreshold region increases in the region of channel length of 10 nm below. Even though asymmetric DGMOSFET is developed to reduce short channel effects, the increase of tunneling current in sub-10 nm is inevitable. As the ratio of tunneling current in off current according to channel doping concentration is calculated in this study, the influence of tunneling current to occur in short channel is investigated. To obtain off current to consist of thermionic emission and tunneling current, the analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for channel doping concentration in sub-10 nm asymmetric DGMOSFET, specially with parameters of channel length, channel thickness, and top/bottom gate oxide thickness and voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.27-31
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• 2004

Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanicalmodels. Gate tunneling current in fully-depleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated $I_G-V_G$ of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.71-77
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• 1992

According to increasing the doping concentration in p-n junction, a tunneling current through trap as well as SRH(Shockley-Read-Hall) generation-recombination current in depletion region occurs. It is the tunneling current that is a dominant current at the forward bias. In this paper, the new tunneling-recombination equation is derived. The thermal generation-recombination current and tunneling current though trap can be easily calculated at the same time because this equation has the same form as the SRH generation-recombination equation. For the validity of this equation, 2 kind of samples are simulated. The one is $n^{+}$-p junction device fabricated with MCT(Mercury Cadmium Telluride, mole fraction=0.29), the other Si n$^{+}-p^{+}$ junction. From the results for MCT $n^{+}$-p junction device and comparing the simulated and expermental I-V characteristics for Si n$^{+}-p^{+}$ junction, it is shown that this equation is a good description for tunneling through trap and thermal generation-recombination current calculation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.5
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• pp.955-960
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• 2007

In this paper, the deviation of tunneling current for gate voltage has been investigated in double gate MOSFET developed to decrease the short channel effects. In device scaled to nano units, the tunneling current is very important current factor and rapidly increases,compared with thermionic emission current according to device size scaled down. We consider the change of tunneling current according to gate voltage in this study. The potential distribution is derived to observe the change of tunneling current according to gate voltage, and the deviation of off-current is derived from the relation of potential distribution and tunneling probability. The derived current is compared with the termionic emission current, and the relation of effective gate voltage to decrease tunneling current is obtained.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.281-285
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• 2011

We investigated the effects of tunneling current on scanning tunneling microscopy (STM) images of 1-octanethiol (OT) and 1-decanethiol (DT) self-assembled monolayers (SAMs). At a low tunneling current, the domain boundaries and ordered alkanethiol molecules were clearly resolved. As the tunneling current was increased at a constant bias voltage, however, the STM images showed disordered structures of the OT and DT SAMs. As the tunneling current was reduced back to low values, the ordered structures of the alkanethiol molecules reappeared. The reversibility of the process suggests that the sulfur head groups did not rearrange under any of the tunneling current conditions. On the basis of our observations, which are inconsistent with the standard model for STM imaging of molecules on metal surfaces, we consider the STM imaging mechanism in terms of a two-region tunneling junction model.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.29-31
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• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.7
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• pp.1311-1316
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• 2016

This paper analyzes the influence of tunneling current on threshold voltage shift by channel length of short channel asymmetric double gate(DG) MOSFET. Tunneling current significantly increases by decrease of channel length in the region of 10 nm below, and the secondary effects such as threshold voltage shift occurs. Threshold voltage shift due to tunneling current is not negligible even in case of asymmetric DGMOSFET to develop for reduction of short channel effects. Off current consists of thermionic and tunneling current, and the ratio of tunneling current is increasing with reduction of channel length. The WKB(Wentzel-Kramers-Brillouin) approximation is used to obtain tunneling current, and potential distribution in channel is hermeneutically derived. As a result, threshold voltage shift due to tunneling current is greatly occurred for decreasing of channel length in short channel asymmetric DGMOSFET. Threshold voltage is changing according to bottom gate voltages, but threshold voltage shifts is nearly constant.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.163-168
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• 2015

This paper analyzed the deviation of tunneling current for bottom gate voltage of sub-10 nm asymmetric double gate MOSFET. The asymmetric double gate MOSFET among multi gate MOSFET developed to reduce the short channel effects has the advantage to increase the facts to be able to control the channel current, compared with symmetric double gate MOSFET. The increase of off current is, however, inescapable if aymmetric double gate MOSFET has the channel length of sub-10 nm. The influence of tunneling current was investigated in this study as the portion of tunneling current for off current was calculated. The tunneling current was obtained by the WKB(Wentzel-Kramers-Brillouin) approximation and analytical potential distribution derived from Poisson equation. As a results, the tunneling current was greatly influenced by bottom gate voltage in sub-10 nm asymmetric double gate MOSFET. Especially it showed the great deviation for channel length, top and bottom gate oxide thickness, and channel thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.611-613
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• 2016

The characteristics of tunnel field-effect transistor(TFET) structure with source-overlapped gate was investigated using a TCAD simulations. Tunneling is mostly divided into line-tunneling and point-tunneling, and line-tunneling is higher performance than point-tunneling in terms of subthreshold swing(SS) and on-current. In this paper, from the simulation results of source-overlapped gate length effects at silicon(Si), germanium(Ge), Si-Ge hetero TFET structure, the guideline of optimal structure with highest performance are proposed.