JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Gate Tunneling Current and QuantumEffects in Deep Scaled MOSFETs

  • Published : 2004.03.31
Download PDF
⟨ Previous Next ⟩

Abstract

Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanicalmodels. Gate tunneling current in fully-depleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated $I_G-V_G$ of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.

Keywords

References

  1. C.-H. Choi, K.-H. Oh, Z. Yu, and R.W. Dutton, 'Direct Tunneling Current Model for Circuit Simulation,'in IEDM Tech. Dig., p. 735, 1999 https://doi.org/10.1109/IEDM.1999.824256
  2. D.K. Blanks, G. Klimeck, R. Lake, D. Jovanovic, R.C. Bowen, C. Fernando, W.R. Frensley, and M. Leng, in Proc. of 'IEEE International Symposium on Compound Semiconductors,'p. 639, 1998 https://doi.org/10.1109/ISCS.1998.711758
  3. K. Kim and J.G. Fossum, 'Double-Gate CMOS: Symmetrical- Versus Asymmetrical-Gate Devices,'IEEE Trans. Electron Devices, vol. 48, pp. 294-299, Feb. 2001 https://doi.org/10.1109/16.902730
  4. S. Datta, 'Quantum Phenomena,' Addison-Wesley, Reading, MA, 1989
  5. R.H. Mathews, and et al., 'A New RTD-FET Logic Family,' Proceedings of IEEE, vol. 87, pp. 596_605, Apr. 1999 https://doi.org/10.1109/5.752517
  6. J.P.A. Van Der Wagt, 'Tunneling-Based SRAM,' Proceedings of IEEE, vol. 87, pp. 571-595, Apr. 1999 https://doi.org/10.1109/5.752516