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Gate Tunneling Current and QuantumEffects in Deep Scaled MOSFETs

Choi, Chang-Hoon (Center for Integrated Systems, Stanford University)
Dutton, Robert W. (Center for Integrated Systems, Stanford University)

Publication Information

JSTS:Journal of Semiconductor Technology and Science / v.4, no.1, 2004 , pp. 27-31 More about this Journal

Abstract

Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanicalmodels. Gate tunneling current in fully-depleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated $I_G-V_G$ of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.

Keywords

gate tunneling; DG SOI; quantum effect; CV; resonant tunneling diode;

Citations & Related Records

Reference

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