• 한국조명전기설비학회지:조명전기설비
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• 제3권4호
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• pp.5-12
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• 1989

전력 전자 분야에서 대용량 트렌지스터의 채용은 여러 장점에도 불구하고 무시되어 왔다. 트랜지스터 제작 기술의 어려움으로 여러 개의 트랜지스터를 직, 병렬로 연결하는 방법에 대하여 기술하고 트랜지스터의 직렬 연결시의 문제점을 설명하여 그 해결책을 제시한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.52-57
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• 1995

An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.

• 한국재료학회지
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• 제5권2호
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• pp.203-207
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• 1995

Polysilicon this film transistors (poly-Si TFTs) with different channel dimensions were fabricated on low-temperature crystalized amorphous silicon films and on as-deposited polysilicon films. The electrical characteristics of these TFTs were characterized and compared. The performance of the TFTs fabricated on the solid-phase crystalized amophous silicon films ws showon to be superior to that of the TFTs fabricated on the as-deposited polysilicon films. It was found that the performance of poly-Si TFTs depends strongly on the material characteristics of the polysilicon films used as the active layers, but only weakly on the channel dimensions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1455-1458
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• 2008

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are fabricated on flexible organic polymer foil substrates. As-fabricated performance, electrical bias-stability at elevated temperatures, electrical response under mechanical flexing, and prolonged mechanical stability of the TFTs are studied. TFTs made on plastic at ultra low process temperatures of $150^{\circ}C$ show initial electrical performance like TFTs made on glass but large gate-bias stress instability. An abnormal saturation of the instability against operation temperature is observed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1105-1106
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• 2008

Staggered type self-aligned transparent-oxide-semiconductor transistors with indium-zinc-oxide as a semiconductor have studied. In this device fabrication, successive sputtering of oxide semiconductor and insulator without breaking of vacuum and without exposing in air, humidity and oxygen can be realized because oxide semiconductor is transparent. As a result of fabrication, transistor characteristics with mobility of $30cm^2/Vs$ and on-off ratio of $10^5$ could be obtained for the newly developed self-alignment device structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1065-1066
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• 2008

Printed thin-film transistors (TFTs) have received profound interests as an alternative to their silicon counterparts for use in fabricating next-Gen microelectronics by virtue of projected low manufacturing cost and certain salient features (e.g., thin and lightweight characteristics, structural flexibility, etc.) that printed TFTs bring to device architecture. The economic advantages stem from engaging low-cost printing techniques (e.g., screen printing, gravure, flexography, etc.) for deposition and patterning in place of traditionally costly high-vacuum, high-temperature photolithographic processes. To render printing TFTs possible, solution processable materials are necessary.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.637-640
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• 2008

The properties of oriented poly(3-hexylthiophene-2,5-diyl) in field effect transistors (FETs) have been investigated through mechanical stretching process as the original. Silicon-based FETs shown high mobility of $0.02\;cm^2/V$ s after thermal treatment and $0.0092\;cm^2/V$ s at r.t. PET-based FETs were expected to show a similar performance in mobility to that of silicon-based FETs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.205-208
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• 2006

We report the recent progress and future prospects of flexible, large-area sensors and actuator using organic thin-film transistors (TFTs). In particular, we describe printing technologies to manufacture electronic artificial skins (e-skins) for robots, sheet image scanners suitable for mobile applications, and Braille sheet display with plastic actuator arrays. We also present recent progress of reliability and stability issues.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.333-336
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• 2006

High Pressure Annealing System was developed to improve the characteristics of low-temperature poly-silicon thin film transistors.. (TFTs). The high-pressure steam annealing was applied to the poly-silicon film made by rapid thermal annealing method. The carrier lifetime was investigated by Microwave detection of the Photo-Conductive Decay and the increase of carrier lifetime which indicates the reduction of the defect was observed by high-pressure steam annealing of 1MPa 600C 1hour.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권3호
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• pp.213-223
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• 2013

A unified channel thermal noise model valid in all operation regions is presented for short channel MOS transistors. It is based on smooth interpolation between weak and strong inversion models and consistent physical model including velocity saturation, channel length modulation, and carrier heating. From testing for noise benchmark and comparing with published noise data, it is shown that the proposed noise model could be useful in simulating the MOSFET channel thermal noise in all operation regions.