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http://dx.doi.org/10.5573/JSTS.2013.13.3.213

A Unified Channel Thermal Noise Model for Short Channel MOS Transistors  

Yu, Sang Dae (School of Electronics Engineering, Kyungpook National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.13, no.3, 2013 , pp. 213-223 More about this Journal
Abstract
A unified channel thermal noise model valid in all operation regions is presented for short channel MOS transistors. It is based on smooth interpolation between weak and strong inversion models and consistent physical model including velocity saturation, channel length modulation, and carrier heating. From testing for noise benchmark and comparing with published noise data, it is shown that the proposed noise model could be useful in simulating the MOSFET channel thermal noise in all operation regions.
Keywords
Unified channel thermal noise model; all region noise model; interpolation approach; BSIM3 noise model; short channel effect;
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Times Cited By KSCI : 2  (Citation Analysis)
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