• 전기학회논문지
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• 제66권3호
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• pp.540-544
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• 2017

In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of $3.16{\times}10^8rad(si)/s$. In that test nMOESFET generated a large amount of photocurrent at a maximum of $3.16{\times}10^8rad(si)/s$. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권4호
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• pp.309-315
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• 2010

A fully-differential low-voltage low-power electrocardiogram (ECG) amplifier by using the nonfeedback PMOS pseudo-resistors is proposed. It consists of two operational-transconductance amplifiers (OTA) in series (a preamplifier and a variable-gain amplifier). To make it insensitive to the gate leakage current of the OTA input transistor, the feedback pseudo-resistor of the conventional ECG amplifier is moved to input branch between the OP amp summing node and the DC reference voltage. Also, an OTA circuit with a Gm boosting block without reducing the output resistance (Ro) is proposed to maximize the OTA DC gain. The measurements shows the frequency bandwidth from 7 Hz to 480 Hz, the midband gain programmable from 48.7 dB to 59.5 dB, the total harmonic distortion (THD) less than 1.21% with a full voltage swing, and the power consumption of 233 nW in a 0.13 ${\mu}m$ CMOS process at the supply voltage of 0.7 V.

• 한국진공학회지
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• 제3권1호
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• pp.71-76
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• 1994

The electrical characteristics of the capacitor dielectric films of amorphous silicon-nit-ride-oxide(ANO) structures are compared with the capacitor dielectric films of oxide-nitride-oxide (ONO) structrues The electrical characteristics of ONO and ANO films were evaluated by high frequency(1 MHz) C-V high frequency C-V after constant voltage stree I-V TDDB and refresh time measurements. ANO films shows good electrical characteristics such as higher total charge to breakdown storage capacitance and longer refresh time than ONO films. Also it makes little difference that leakage current and flat band voltage shyift(ΔVfb)of ANO ana ONO films.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 추계학술대회
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• pp.713-716
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• 2013

전체 채널 길이는 같지만 드레인과 게이트사이의 진성영역 길이(Lin), 드레인 및 소스의 불순물 농도, 유전율, 유전체 두께가 다른 N-채널 Tunneling FET의 특성을 비교 분석하였다. 사용된 소자는 SOI 구조의 N-채널 Tunneling FET이다. 진성영역 길이는 30~70nm, 드레인 dose 농도는 $2{\times}10^{12}cm^{-2}{\sim}2{\times}10^{15}cm^{-2}$, 소스 dose 농도는 $1{\times}10^{14}cm^{-2}{\sim}3{\times}10^{15}cm^{-2}$, 유전율은 3.9~29이고, 유전체 두께는 3~9nm이다. 소자 성능 지수는 Subthreshold slope(S-slope), On/off 전류비, 누설전류이다. 시뮬레이션 결과 진성영역 길이가 길며 드레인 농도가 낮을수록 누설전류가 감소한 것을 알 수 있었다. S-slope은 소스의 불순물 농도와 유전율이 높으며 유전체 두께는 얇을수록 작은 것을 알 수 있었다. 누설전류와 S-slope을 고려하면 N-채널 TFET 소자 설계 시 진성영역 폭이 넓으며 드레인의 불순물 농도는 낮고, 소스 농도와 유전율이 높으며 유전체 두께는 얇게 하는 것이 바람직하다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.542-546
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• 1994

The objective of the study is to design and develope a 13kW zero voltage switching DC-DC Converter far high power application. Due to using the snubber capacitor in the right leg instead of increasing transformer leakage inductance, DC characteristics and the total efficiency in the proposed ZVS DC-DC converter is increased mere than in the conventional ZVS DC-DC converter by reduction of the circulating current when the load current is large. Also, this paper includes simulation and experimental results of the proposed ZVS FB DC-DC converter.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2014년도 추계학술대회 논문집
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• pp.25-26
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• 2014

Renewable energy sources such as wind and solar power are free and can be easily harvested everywhere. However, one of the biggest problems when using this kind of energy source is how to increase the efficiency of power conversion system. This paper introduces a modified 3-phase inverter in order to increase the power conversion efficiency. By adding 3 bi-directional switches at output of the inverter, the current flow back DC source during zero state is prevented to minimize leakage current, so that the efficiency of whole system is increased. The proposed topology also improves the power quality to satisfy the total harmonics distortion (THD) requirement. In order to verify the effectiveness of the proposed topology, simulation results are carried out using Simulink in MATLAB.

• Journal of Chest Surgery
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• 제20권1호
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• pp.55-69
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• 1987

The result of valve failure with the lonescu-Shiley pericardial xenograft was presented with the review of current knowledge. This study reviewed 557 patients, who underwent total of 683 lonescu-Shiley pericardial valve replacement from 1979 to 1985 at Seoul National University Hospital. There were 357 patients who had mitral valve replacement, 73 with aortic valve and 127 with double valve replacement. There were 35 operative deaths. The survivors were followed at OPD. There were 32 patients who had prosthetic valve failure, whose ages ranged from 11 to 58 years [mean 27.8] and their postop interval was 56 ~ 22 months [range; 6-87] The causes of valve failure are prosthetic valve endocarditis in 14, primary disruption or calcification in 13, paravalvular leakage in 4, and others in 2 patients. Redo valve replacement was done in 12 patients after a mean interval of 50 * 20 months. [range; 6-79 months] Actuarial analysis of late results indicates actuarial freedom from endocarditis at 6 year is 87.9 ~ 6.8%, and actuarial freedom from primary disruption or calcification or paravalvular leakage at 5 year is 84.4 * 2.3%. In this series, however, valve failure due to thrombosis is not included.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권12호
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• pp.685-690
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• 2000

Multiple-lightning impulse currents are a general feature of the lightning ground f=flash. It is therefore necessary for lightning arresters used in power systems to be estimated by applying not only a single-lightning impulse current but also a multiple-lightning impulse currents. This paper presents the effects of multiple-lightning impulse currents on deterioration of ZnO arrester blocks. The multiple-lightning impulse generator which can produce quadruple 8/20$[\mus]$ 5[kA] with separation time of 30~120[ms] is designed and fabricated. The total energy applied to the arrester block at each impulse is about 1,200[J]. In experiment, various parameters such as leakage current component, reference voltage, and temperature are measured with the number of applied impulse current. Also, micro-structure changes of the ZnO blocks after applying the single and the multiple-lightning impulse currents of 200 times are compared. The experimental results indicate that the types of arrester blocks are more vulnerable to deterioration or damage by multiple-lightning impulse currents.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.659-664
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• 2009

This paper describes lightning impulse operating duty performance and temperature dependence of series gap type for transmission line arresters. The ageing parameters of lightning arresters are impulse current, moisture ingress, temperature ageing and so on. Especially it is important to estimate the change of electrical characteristics by lightning impulse current. In the discharge withstand test, total energy applied to the ZnO arrester each time is 4/10 ${\mu}s$, 30 kA. and in the operating duty test, the arrester has passed the test if thermal stability is achieved, if the residual voltage measured before and after the test is not changed by more than 5 %, and after the test reveals no evidence of puncture, flashover or cracking of the ZnO block. As a results, the residual voltage was in the range of 17.2${\sim}$20.3 kV and ZnO block bear up against at 2 shot of series impulse current of 30 kA. Also it was so excellent that the mechanical destruction does not occur at the 2 groups of 5 impulses current of 2/20 ${\mu}s$ 10 kA. According to the tests, it is thought that the ZnO arrester shows good stability with impulse current test. and it was found that the ambient temperature is increased resistive leakage current was increased in the range 47.3${\sim}$167.4 ${\mu}A$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.363-366
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• 2004

PZT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk PZT target containing $5\%$ excess PbO was used. They were formed with in-situ process at $650^{\circ}C$ as total thickness of 175 and 250 nm after the depositing of thin PZT films at room temperature, i. e. 2-step Sputtering. It was found that the ferroelectric perovskite phase is formed at $650^{\circ}C$ by XRD and the interface between room temp.-layer and $650^{\circ}C$ -layer is not existent. In the samples undergoing 2-step sputtering the dielectric constant was 600 or more and the leakage current density was $2{\times}10^{-7}A/cm^2$. So, we found that the room temp.-layer on the bottom electrode stabilize the underlaid layers.