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The Korean Institute of Electrical Engineers (대한전기학회)
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Analysis of Radiation Effects in CMOS 0.18um Process Unit Devices

CMOS 0.18um 공정 단위소자의 방사선 영향 분석

  • Jeong, Sang-Hun (Dept. of Nuclear Convergence Technology Development Korea Atomic Energy Research Institute) ;
  • Lee, Nam-Ho (Dept. of Nuclear Convergence Technology Development Korea Atomic Energy Research Institute) ;
  • Lee, Min-Woong (Dept. of Electronic Engineering Chonbuk National University) ;
  • Cho, Seong-Ik (Dept. of Electronic Engineering Chonbuk National University)
  • Received : 2016.09.29
  • Accepted : 2016.11.25
  • Published : 2017.03.01
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Abstract

In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of $3.16{\times}10^8rad(si)/s$. In that test nMOESFET generated a large amount of photocurrent at a maximum of $3.16{\times}10^8rad(si)/s$. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices.

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References

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