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http://dx.doi.org/10.5370/KIEE.2017.66.3.540

Analysis of Radiation Effects in CMOS 0.18um Process Unit Devices  

Jeong, Sang-Hun (Dept. of Nuclear Convergence Technology Development Korea Atomic Energy Research Institute)
Lee, Nam-Ho (Dept. of Nuclear Convergence Technology Development Korea Atomic Energy Research Institute)
Lee, Min-Woong (Dept. of Electronic Engineering Chonbuk National University)
Cho, Seong-Ik (Dept. of Electronic Engineering Chonbuk National University)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.66, no.3, 2017 , pp. 540-544 More about this Journal
Abstract
In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of $3.16{\times}10^8rad(si)/s$. In that test nMOESFET generated a large amount of photocurrent at a maximum of $3.16{\times}10^8rad(si)/s$. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices.
Keywords
Pulse radiation; Radiation Effects; Leakage Current; Dose-rate;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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