Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Dielectric properties of PZT thin films by 2 step sputtering

2단계 스퍼터링에 의한 PZT 박막의 유전특성

  • Park Sam-Gyu (Dept. of Electronic Engineering, Honam University) ;
  • Mah Jae-Pyung (Dept. of Electronic Engineering, Honam University)
  • 박삼규 (호남대학교 전자공학과) ;
  • 마재평 (호남대학교 전자공학과)
  • Published : 2004.06.01
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Abstract

PZT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk PZT target containing $5\%$ excess PbO was used. They were formed with in-situ process at $650^{\circ}C$ as total thickness of 175 and 250 nm after the depositing of thin PZT films at room temperature, i. e. 2-step Sputtering. It was found that the ferroelectric perovskite phase is formed at $650^{\circ}C$ by XRD and the interface between room temp.-layer and $650^{\circ}C$ -layer is not existent. In the samples undergoing 2-step sputtering the dielectric constant was 600 or more and the leakage current density was $2{\times}10^{-7}A/cm^2$. So, we found that the room temp.-layer on the bottom electrode stabilize the underlaid layers.

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