• Journal of Astronomy and Space Sciences
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• 제18권2호
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• pp.153-162
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• 2001

본 논문에서는 아리랑 2호가 운용될 궤도의 우주방사능 환경 및 total ionizing dose(TID) 영향에 대하여 분석하였다. 포획된 양자의 경우 SAA(South Atlantic Anomaly) 지역에 집중되어 있음을 알 수 있었으며, TID에 영향을 미치는 우주 방사능은 포획된 양자 및 전자와 태양양자임을 알 수 있었다. 저 에너지 입자는 알루미늄 차단 구조물을 이용하여 방사능 영향을 효과적으로 차단할 수 있음을 알 수 있었으나, 고 에너지 입자의 경우 구조물의 두께를 증가하여도 방사능 영향을 효과적으로 차단할 수 없음을 알 수 있었다. 아리랑 2호의 임무수명기간 동안 전자부품에 계속적으로 피폭되는 전체 방사량을 알루미늄 차단두께의 함수로 나타내었으며, 이 값들은 아리랑 2호의 전자부품의 선택기준 및 위성체 또는 구성품의 구조물 두께를 설정할 수 있는 기준으로 제시하였다.

• 제어로봇시스템학회논문지
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• 제17권11호
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• pp.1125-1131
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• 2011

This paper presents a control theoretic approach to realizing fault tolerance in asynchronous sequential circuits. The considered asynchronous circuit is assumed to work in space environment and is subject to faults caused by total ionizing dose (TID) effects. In our setting, TID effects cause permanent changes in state transition characteristics of the asynchronous circuit. Under a certain condition of reachability redundancy, it is possible to design a corrective controller so that the closed-loop system can maintain the normal behavior despite occurrences of TID faults. As a case study, the proposed control scheme is applied to an asynchronous arbiter implemented in FPGA.

• Journal of Electrical Engineering and Technology
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• 제12권4호
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• pp.1619-1626
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• 2017

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

• 전기전자학회논문지
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• 제27권3호
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• pp.303-307
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• 2023

본 논문은 Buried Channel Array Transistor(BCAT) 소자의 Oxide 내부에 Total Ionizing Dose(TID) effects으로 인한 Electron-Hole Pair의 생성이 유도되어, Oxide 계면의 Hole Trap Charge의 증가에 따른 누설전류의 증가와 문턱 전압의 변화를 기존에 제안한 Partial Isolation Buried Channel Array Transistor(Pi-BCAT)구조와 비교 시뮬레이션 하여, Pi-BCAT 소자의 증가한 Oxide 면적과 상관없이 변화한 누설전류와 문턱 전압에서의 특성이 비대칭 도핑 BCAT 구조보다 우수함을 보여 준다.

• Nuclear Engineering and Technology
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• 제36권1호
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• pp.1-11
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• 2004

Two approximate methods for a cosmic radiation shielding calculation in low earth orbits were developed and assessed. Those are a sectoring method and a chord-length distribution method. In order to simulate a change in cosmic radiation environments along the satellite mission trajectory, IGRF model and AP(E)-8 model were used. When the approximate methods were applied, the geometrical model of satellite structure was approximated as one-dimensional slabs, and a pre-calculated dose-depth conversion function was introduced to simplify the dose calculation process. Verification was performed with mission data of KITSAT-1 and the calculated results were also compared with detailed 3-dimensional calculation results using Monte Carlo calculation. Dose results from the approximate methods were conservatively higher than Monte Carlo results, but were lower than experimental data in total dose rate. Differences between calculation and experimental data seem to come from the AP-8 model, for which it is reported that fluxes of proton are underestimated. We confirmed that the developed approximate method can be applied to commercial satellite shielding calculations. It is also found that commercial products of semi-conductors can be damaged due to total ionizing dose under LEO radiation environment. An intensive shielding analysis should be taken into account when commercial devices are used.

• Nuclear Engineering and Technology
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• 제54권6호
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• pp.2198-2203
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• 2022

As robotics become more sophisticated, there are a growing number of generic systems being used for routine tasks in nuclear environments to reduce risk to radiation workers. The nuclear sector has called for more commercial-off-the-shelf (COTS) devices and components to be used in preference to nuclear specific hardware, enabling robotic operations to become more affordable, reliable, and abundant. To ensure reliable operation in nuclear environments, particularly in high-gamma facilities, it is important to quantify the tolerance of electronic systems to ionizing radiation. To deliver their full potential to end-users, mobile robots require sophisticated autonomous behaviors and sensing, which requires significant computational power. A popular choice of computing system, used in low-cost mobile robots for nuclear environments, is the UP Core single board computer. This work presents estimates of the total ionizing dose that the UP Core running the Robot Operating System (ROS) can withstand, through gamma irradiation testing using a Co-60 source. The units were found to fail on average after 111.1 ± 5.5 Gy, due to faults in the on-board power management circuitry. Its small size and reasonable radiation tolerance make it a suitable candidate for robots in nuclear environments, with scope to use shielding to enhance operational lifetime.

• 전자공학회논문지
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• 제50권6호
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• pp.85-90
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• 2013

본 논문에서는 본 연구실에서 제안된 Dummy Gate Assisted MOSFET을 이용하여 6bit SAR (Successive Approximation Register) ADC를 설계하였으며 이에 대한 대조군으로 Conventional MOSFET으로 동일한 회로를 설계하여 두 회로의 Co-60 Gamma Ray에 의한 누적방사선 영향을 비교 분석해 보았다. 설계된 SAR ADC는 Binary Capacitor DAC과 Dynamic Latch 형태의 Comparator 그리고 Logic으로 구성이 되었으며, 0.35um standard CMOS공정으로 제작되었다. 방사선 조사 후 Conventional MOSFET을 이용한 ADC는 정상동작하지 못하였지만, Dummy Gate Assisted MOSFET을 사용한 ADC는 방사선 조사 후 DNL은 0.7LSB에서 2.0LSB, INL은 1.8LSB에서 3.2LSB로 다소 증가하였으나 정상적인 A/D 변환이 가능하다는 것을 확인하였다.

• International Journal of Aeronautical and Space Sciences
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• 제3권2호
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• pp.40-45
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• 2002

A radiation analysis is performed for the Ka and Ku-band transponder of the Communications and Broadcasting Satellite (CBS) that is planned for launch into the geo-synchronous orbit. A particular attention is given to calculation of Total Ionizing Dose (TID) for the mission life time of 15 + 3 years. A numerical modeling of the charged particles at the geo-synchronous orbit is undertaken. The charged particles from the modeling are then transported through the mechanical structure and component housings of the transponder. A set of locations are selected for the detailed calculation of TID. The results from the present calculation show that three-dimensional modeling of the component housings as well as the mechanical structure of the spacecraft is requisite in order to acquire a reliable calculation of TID.

• Journal of Astronomy and Space Sciences
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• 제33권3호
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• pp.229-236
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• 2016

We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS) technology). We compare our radiation tolerance data for LPDDR SDRAM with those of general DDR SDRAM. The data confirms that our devices under test (DUTs) are potential candidates for space flight applications.

• Journal of Semiconductor Engineering
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• 제1권3호
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.