• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.440-448
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• 2004

In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.619-623
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• 2006

The most important factor which determines resonance characteristics of FBAR(Film Bulk Acoustic Resonator) is the piezoelectricity of piezoelectric film. The piezoelectric properties of ZnO thin films which is strong as FBAR piezoelectric film is determined by the degree of c-axis preferred orientation with (002) plan. Therefore, many researchers have been interested in the study on the preferred orientation of the piezoelectric thin film. This paper has studied the preferred orientation of ZnO piezoelectric thin films using the helped seed layer of ZnO. The result shows that the c-axis ZnO thin films with columnar grains that the value of standard $deviation(\sigma)$ of XRD rocking curve is of $\sigma=1.15^{\circ}$ have the excellent piezoelectric property.

• Korean Journal of Materials Research
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• v.29 no.9
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• pp.567-577
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• 2019

Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of $150{\sim}550^{\circ}C$ with alkyl/amine or chloride precursors. Due to the low reactivity with $NH_3$ reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.317-324
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• 2016

Continued miniaturization and increasingly exact requirements for thin film deposition in the semiconductor industry is driving the search for new effective, efficient, selective precursors and processes. The requirements of defect-free, conformal films, and precise thickness control have focused attention on atomic layer deposition (ALD). ALD precursors so far have been developed through a trial-and-error experimental approach, leveraging the expertise and tribal knowledge of individual research groups. Precursors can show significant variation in performance, depending on specific choice of co-reactant, deposition stage, and processing conditions. The chemical design space for reactive thin film precursors is enormous and there is urgent need for the development of computational approaches to help identify new ligand-metal architectures and functional co-reactants that deliver the required surface activity for next-generation thin-film deposition processes. In this paper we discuss quantum mechanical simulation (e.g. density functional theory, DFT) applied to ALD precursor reactivity and state-of-the-art automated screening approaches to assist experimental efforts leading toward optimized precursors for next-generation ALD processes.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.159-163
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• 2003

ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.205-209
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• 2007

ZnO thin films were deposited on a Si wafer and a soda lime glass using atomic layer deposition(ALD). The substrate temperature were between $130^{\circ}C{\sim}150^{\circ}C$. The deposition rate of the ZnO film was measured to be $2.72{\AA}$ per cycle. The films were analyzed using field emission scanning electron microscopy(FESEM), X-ray diffractometer(XRD), and Auger electron spectroscopy(AES). Impurity-free ZnO thin films were obtained and the crystallinity was found to be dependant upon the substrate temperature.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.142-146
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• 1999

CeO$_2$ buffer layers and in-situ YSa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were grown by pulsed laser deposition method on R-plane sapphire substrates. Superconducting properties and surface morphologies of YBCO thin films exhibit strong dependence on the crystallinity of CeO$_2$ buffer layer. The best a-axis oriented CeO$_2$ buffer layers could be grown at 800 $^{\circ}C$ of deposition temperature, 1.5 J/ cm$^2$ of laser energy density and 50 mTorr of oxygen pressure. The YBCO thin films on the a-axis CeO$_2$ buffer layer have Tc (R=0) ${\ge}$ 89.5 K, ${\delta}$Tc ${\sim}$ 0.5 K, and Jc ${\ge}$ 3.2 ${\times}$ 10$^6$ A/ cm$^2$ at 77 K.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.42-47
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• 2006

In this paper, we prepared high-quality ZnO thin films for application of FBAR (Film Bulk Acoustic Resonator) by using pulse DC magnetron sputtering. To prevent the formation of low dielectric layers between metal and piezoelectric layer, Ru film of 30 nm thickness was used as a buffer layer. In addition we investigated the influence of annealing condition with various temperatures. As the annealing temperature increased, the crystalline orientation with the preference of (002) c-axis and resistance properties improved. The single resonator which was fabricated at $500^{\circ}C$ exhibited the resonance frequency and the return loss 0.99 GHz and 15 dB, respectively. This work demonstrates potential feasibility for the use of thin film Ru buffer layers and the optimization of annealing condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1139-1141
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• 2006

For the bottom-contact pentacene organic thin-film transistors (OTFTs), the insertion of a thin PMMA layer $(20{\AA})$ between the pentacene and the electrode improves the electrical performances, such as carrier mobility and on-current magnitude, about 4 times larger than those of the devices without the PMMA. The performance enhancement is presumably due to the decreased contact resistance between metal and pentacene by inserting the thin PMMA layer.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.3
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• pp.33-39
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• 1983

New Schottky devices with thin stepped oxide layer (about 1000 ${\AA}$) along the edge of metal-semiconductor junction have been designed and fabricated. The breakdown voltages of these diodes have been compared with those of conventional metal overlap and P guard ring Schottky diode structures. Thin stepped oxide layer has been grown by the process of T.C.E. oxidation. In order to compare and demonstrate the improved down phenomena of these devices, conventional metal overlap diode and P guard ring which have the same dimension with new devices have also been integrated in a same New Schottty devices structured with thin stepped oxide layer have shown significant improvement in breakdown phenomena compared with conventional diodes.