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A Study on Preferred Orientation of ZnO Piezoelectric Thin Film Using Helped Seed Layer  

Park, In-Chul (Dept. of Electronic Eng. Cheongju University)
Kim, Hong-Bae (Div. of Electronic and Information Eng. Cheongju University)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.6, 2006 , pp. 619-623 More about this Journal
Abstract
The most important factor which determines resonance characteristics of FBAR(Film Bulk Acoustic Resonator) is the piezoelectricity of piezoelectric film. The piezoelectric properties of ZnO thin films which is strong as FBAR piezoelectric film is determined by the degree of c-axis preferred orientation with (002) plan. Therefore, many researchers have been interested in the study on the preferred orientation of the piezoelectric thin film. This paper has studied the preferred orientation of ZnO piezoelectric thin films using the helped seed layer of ZnO. The result shows that the c-axis ZnO thin films with columnar grains that the value of standard $deviation(\sigma)$ of XRD rocking curve is of $\sigma=1.15^{\circ}$ have the excellent piezoelectric property.
Keywords
FBAR; ZnO; Helped seed layer; Preferred orientation; Standard $deviation(\sigma)$;
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