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http://dx.doi.org/10.5757/JKVS.2007.16.3.205

ZnO thin film deposition at low temperature using ALD  

Kim, H.S. (Department of Applied Physics, Dankook University)
Publication Information
Journal of the Korean Vacuum Society / v.16, no.3, 2007 , pp. 205-209 More about this Journal
Abstract
ZnO thin films were deposited on a Si wafer and a soda lime glass using atomic layer deposition(ALD). The substrate temperature were between $130^{\circ}C{\sim}150^{\circ}C$. The deposition rate of the ZnO film was measured to be $2.72{\AA}$ per cycle. The films were analyzed using field emission scanning electron microscopy(FESEM), X-ray diffractometer(XRD), and Auger electron spectroscopy(AES). Impurity-free ZnO thin films were obtained and the crystallinity was found to be dependant upon the substrate temperature.
Keywords
ZnO thin film; atomic layer deposition(ALD);
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