Effects of CeO$_2$ Buffer Layer on Critical Current of YBCO Thin Films grown on Sapphire Substrate

CeO$_2$ 완충층이 사파이어 기판에 성장된 YBCO 박막의 임계전류에 미치는 영향

  • Lim, Hae-Ryong (Korea Research Institute of Standards and Science, Department of physics, Yeungnam University) ;
  • Kim, In-Seon (Korea Research Institute of Standards and Science) ;
  • Kim, Dong-Ho (Department of physics, Yeungnam University) ;
  • Park, Yong-Ki (Korea Research Institute of Standards and Science) ;
  • Park, Jong-Chul (Korea Research Institute of Standards and Science)
  • 임해용 (한국표준과학연구원, 초전도그룹,영남대학교, 물리학과) ;
  • 김인선 (한국표준과학연구원, 초전도그룹) ;
  • 김동호 (영남대학교, 물리학과) ;
  • 박용기 (한국표준과학연구원, 초전도그룹) ;
  • 박종철 (한국표준과학연구원, 초전도그룹)
  • Published : 1999.08.18

Abstract

CeO$_2$ buffer layers and in-situ YSa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were grown by pulsed laser deposition method on R-plane sapphire substrates. Superconducting properties and surface morphologies of YBCO thin films exhibit strong dependence on the crystallinity of CeO$_2$ buffer layer. The best a-axis oriented CeO$_2$ buffer layers could be grown at 800 $^{\circ}C$ of deposition temperature, 1.5 J/ cm$^2$ of laser energy density and 50 mTorr of oxygen pressure. The YBCO thin films on the a-axis CeO$_2$ buffer layer have Tc (R=0) ${\ge}$ 89.5 K, ${\delta}$Tc ${\sim}$ 0.5 K, and Jc ${\ge}$ 3.2 ${\times}$ 10$^6$ A/ cm$^2$ at 77 K.

Keywords