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Characteristics of the ZnTe solar cell by the co-sputtering methods  

장유진 (리노공업주식회사 기술연구소)
김성우 (부경대학교 전자컴퓨터정보통신공학)
최혁환 (부경대학교 전자컴퓨터정보통신공학)
이명교 (부경대학교 전자컴퓨터정보통신공학)
권태하 (부경대학교 전자컴퓨터정보통신공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.8, no.2, 2004 , pp. 440-448 More about this Journal
Abstract
In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.
Keywords
ZnTe thin film; co-sputtering; solar cell; energyband gap;
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