Properties of the oxynitride films prepared by reoxidation of thermal oxide in $N_2O$
($N_2O$ 가스에서 열산화막의 재산화에 의해 형성된 oxynitride막의 특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 1993.05a
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- pp.39-43
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- 1993