• Title/Summary/Keyword: Ternary gate

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Implementation of Ternary Adder and Multiplier Using Current-Mode CMOS (전류모드 CMOS에 의한 3치 가산기 및 승산기의 구현)

  • Seong, Hyeon-Kyeong
    • Proceedings of the KIEE Conference
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    • 2006.10c
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    • pp.142-144
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    • 2006
  • In this paper, the Ternary adder and multiplier are implemented by current-mode CMOS. First, we implement the ternary T-gate using current-mode CMOS which have an effective availability of integrated circuit design. Second, we implement the circuits to be realized 2-variable ternary addition table and multiplication table over finite fields GF(3) with the ternary T-gates. Finally, these operation circuits are simulated by Spice under $1.5{\mu}m$ CMOS standard technology, $1.5{\mu}m$ unit current, and 3.3V VDD voltage. The simulation results have shown the satisfying current characteristics. The ternary adder and multiplier implemented by current-mode CMOS are simple and regular for wire routing and possess the property of modularity with cell array.

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The Design of the Ternary Sequential Logic Circuit Using Ternary Logic Gates (3치 논리 게이트를 이용한 3치 순차 논리 회로 설계)

  • 윤병희;최영희;이철우;김흥수
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.10
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    • pp.52-62
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    • 2003
  • This paper discusses ternary logic gate, ternary D flip-flop, and ternary four-digit parallel input/output register. The ternary logic gates consist of n-channel pass transistors and neuron MOS(νMOS) threshold inverters on voltage mode. They are designed with a transmission function using threshold inverter that are in turn, designed using Down Literal Circuit(DLC) that has various threshold voltages. The νMOS pass transistor is very suitable gate to the multiple-valued logic(MVL) and has the input signal of the multi-level νMOS threshold inverter. The ternary D flip-flop uses the storage element of the ternary data. The ternary four-digit parallel input/output register consists of four ternary D flip-flops which can temporarily store four-digit ternary data. In this paper, these circuits use 3.3V low power supply voltage and 0.35m process parameter, and also represent HSPICE simulation result.

Function Embedding and Projective Measurement of Quantum Gate by Probability Amplitude Switch (확률진폭 스위치에 의한 양자게이트의 함수 임베딩과 투사측정)

  • Park, Dong-Young
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.6
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    • pp.1027-1034
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    • 2017
  • In this paper, we propose a new function embedding method that can measure mathematical projections of probability amplitude, probability, average expectation and matrix elements of stationary-state unit matrix at all control operation points of quantum gates. The function embedding method in this paper is to embed orthogonal normalization condition of probability amplitude for each control operating point into a binary scalar operator by using Dirac symbol and Kronecker delta symbol. Such a function embedding method is a very effective means of controlling the arithmetic power function of a unitary gate in a unitary transformation which expresses a quantum gate function as a tensor product of a single quantum. We present the results of evolutionary operation and projective measurement when we apply the proposed function embedding method to the ternary 2-qutrit cNOT gate and compare it with the existing methods.

Area- and Energy-Efficient Ternary D Flip-Flop Design

  • Taeseong Kim;Sunmean Kim
    • Journal of Sensor Science and Technology
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    • v.33 no.3
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    • pp.134-138
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    • 2024
  • In this study, we propose a ternary D flip-flop using tristate ternary inverters for an energy-efficient ternary circuit design of sequential logic. The tristate ternary inverter is designed by adding the functionality of the transmission gate to a standard ternary inverter without an additional transistor. The proposed flip-flop uses 18.18% fewer transistors than conventional flip-flops do. To verify the advancement of the proposed circuit, we conducted an HSPICE simulation with CMOS 28 nm technology and 0.9 V supply voltage. The simulation results demonstrate that the proposed flip-flop is better than the conventional flip-flop in terms of energy efficiency. The power consumption and worst delay are improved by 11.34% and 28.22%, respectively. The power-delay product improved by 36.35%. The above simulation results show that the proposed design can expand the Pareto frontier of a ternary flip-flop in terms of energy consumption. We expect that the proposed ternary flip-flop will contribute to the development of energy-efficient sensor systems, such as ternary successive approximation register analog-to-digital converters.

A Study on the Information Reversibility of Quantum Logic Circuits (양자 논리회로의 정보 가역성에 대한 고찰)

  • Park, Dong-Young
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.1
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    • pp.189-194
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    • 2017
  • The reversibility of a quantum logic circuit can be realized when two reversible conditions of information reversible and energy reversible circuits are satisfied. In this paper, we have modeled the computation cycle required to recover the information reversibility from the multivalued quantum logic to the original state. For modeling, we used a function embedding method that uses a unitary switch as an arithmetic exponentiation switch. In the quantum logic circuit, if the adjoint gate pair is symmetric, the unitary switch function shows the balance function characteristic, and it takes 1 cycle operation to recover the original information reversibility. Conversely, if it is an asymmetric structure, it takes two cycle operations by the constant function. In this paper, we show that the problem of 2-cycle restoration according to the asymmetric structure when the hybrid MCT gate is realized with the ternary M-S gate can be solved by equivalent conversion of the asymmetric gate to the gate of the symmetric structure.

Circuit Design of a Ternary Flip-Flop Using Ternary Logic Gates

  • Kim, Jong-Heon;Hwang, Jong-Hak;Park, Seung-Young;Kim, Heung-Soo
    • Proceedings of the IEEK Conference
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    • 2000.07a
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    • pp.347-350
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    • 2000
  • We present the design of ternary flip-flop which is based on ternary logic so as to process ternary data. These flip-flops are fabricated with ternary voltage mode NOR, NAND, INVERTER gates. These logic gate circuits are designed using CMOS and obtained the characteristics of a lower voltage, a lower power consumption as compared to other gates. These circuits have been simulated with the electrical parameters of a standard 0.25 micron CMOS technology and 2.5 volts supply voltage. The Architecture of proposed ternary flip-flop is highly modular and well suited for VLSI implementation, only using ternary gates.

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A Design of a Ternary Storage Elements Using CMOS Ternary Logic Gates (CMOS 3치 논리 게이트를 이용한 3치 저장 소자 설계)

  • Yoon, Byoung-Hee;Byun, Gi-Young;Kim, Heung-Soo
    • Journal of IKEEE
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    • v.8 no.1 s.14
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    • pp.47-53
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    • 2004
  • We present the design of ternary flip-flop which is based on ternary logic so as to process ternary data. These flip-flops are composed with ternary voltage mode NMAX, NMIN, INVERTER gates. These logic gate circuits are designed using CMOS and obtained the characteristics of a lower voltage, lower power consumption as compared to other gates. These circuits have been simulated with the electrical parameters of a standard 0.35um CMOS technology and 3.3Volts supply voltage. The architecture of proposed ternary flip-flop is highly modular and well suited for VLSI implementation, only using ternary gates.

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Energy-Efficient Ternary Modulator for Wireless Sensor Networks

  • Seunghan Baek;Seunghyun Son;Sunmean Kim
    • Journal of Sensor Science and Technology
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    • v.33 no.3
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    • pp.147-151
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    • 2024
  • The importance of Wireless Sensor Networks is becoming more evident owing to their practical applications in various areas. However, the energy problem remains a critical barrier to the progress of WSNs. By reducing the energy consumed by the sensor nodes that constitute WSNs, the performance and lifespan of WSNs will be enhanced. In this study, we introduce an energy-efficient ternary modulator that employs multi-threshold CMOS for logic conversion. We optimized the design with a low-power ternary gate structure based on a pass transistor using the MTCMOS process. Our design uses 71.69% fewer transistors compared to the previous design. To demonstrate the improvements in our design, we conducted the HSPICE simulation using a CMOS 180 nm process with a 1.8V supply voltage. The simulation results show that the proposed ternary modulator is more energy-efficient than the previous modulator. Power-delay product, a benchmark for energy efficiency, is reduced by 97.19%. Furthermore, corner simulations demonstrate that our modulator is stable against PVT variations.

Realization of Ternary Arithmetic Circuits (三値演算回路의 實現)

  • 林寅七 = In-Chil Lim;金永洙
    • Communications of the Korean Institute of Information Scientists and Engineers
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    • v.3 no.1
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    • pp.18-30
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    • 1985
  • This paper describes a logical design of ternary arithmetic circuits based on T-gates. A new circuit of T-gate is proposed which is improved in the stability of operation, and a ternary adder, subtracter, multiplier and divider using the T-gates are realized. The realization of the circuits is based on the Mod-3, system and the Signed Ternary system using digit 0, 1, 2 and -1, 0, +1 as arithmetic states.

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

  • Wang, Wei;Xu, Hongsong;Huang, Zhicheng;Zhang, Lu;Wang, Huan;Jiang, Sitao;Xu, Min;Gao, Jian
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.1
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    • pp.91-105
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    • 2016
  • Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.