• KIEAE Journal
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• v.17 no.4
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• pp.89-94
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• 2017

Purpose: Condensation in walk-in closets attached to apartment bathroom has been known as an emerging issue that may threat occupants' comfort and health. Despite a number of design guidelines and enforcements to prevent condensation, condensation issues may still occur depending on various cases and scenarios. We aim to identify what condensation scenarios may lead to walk-in closet condensation and/or worse the existing condensation issues. Method: First we choose an actual walk-in closet of an apartment that suffers from sporadic condensation and resulting mold and mildew. Then we observe its relative humidity and temperature after the bathroom is used, in which excessive vapor is thought to be transported to the walk-in closet. We analyze Temperature Difference Ratio - a domestic indicator of condensation occurrence, and dew point temperature to compare it with surface temperature using 2D heat transfer simulation upon various condensation scenarios. Result: TDR of the test walk-in closet turns out be OK despite mold and mildew actually occurring. Hot water pipe installed in the floor would greatly reduce condensation. If hot water pipe in the upper floor, however, is not used, or hot water pipe of the closet is turned off during swing seasons, it is expected that condensations may still occur.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.23-30
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• 1993

Hydrogenation on the top gate and bottom gate Poly-Si TET's was performed by using Nh$_{3}$ plasma and annealing SiN film deposited by PECVD and then the electric characteristics on Poly-Si TET were investigated. As the time of NA$_{3}$ plasma treatment increaes, on/off current ratio gradually increases and the swing value decreases. The trap densities of graim boundaries in Poly-Si decrease very much during the inital 20min of hydrogenation time, and the decreasing scale becomes smaller after 20 min. The electric characteristics of the top gate TFT are better than those of the bottom gate TFT, it is considered due to the defects at the interface between the Poly-Si and the underlayer, SiO$_{2}$. After NH$_{3}$ plasma was treated for 2 hours for the top gate TFT, as the aging time atroon temperature increases on current was not scacely changed and off current decreases more than 1 order. Gate current density recovers to original value after the aging treatment for 8 days and then the electric characteristics are finally improved. It is suggested that the degraded characteristics of gate oxide are improved, from the variations of C-V characteristics with aging time. For the hydrogenation of isothermal and isochronal annealing SiN film deposited by PECVD, the characteristics of Poly-Si TFT are improved with increasing annealing temperature and are not largely changed with increasing annealing time. This results is good in agreement with the hydrogen reduction in Sin film as variations of annealing temperature and time.

• Transactions of the Korean hydrogen and new energy society
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• v.34 no.1
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• pp.1-7
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• 2023

A fuel handling process combined with a pressure swing adsorption system (PSA) was simulated to produce pure hydrogen with a purity greater than 99.97%. The simulation consists of two parts. The fuel processing part consisting of reformer and water-gas shift reaction was simulated with Aspen plus^®, and the hydrogen purification part consisting of PSA was simulated with Aspen Adsorption^®. In this study, the effect of reformer temperature and pressure on the total hydrogen production yield was investigated. Simulations were performed over a temperature range of 700 to 1,000℃ and a pressure range of 1 to 10 bar. The total hydrogen production yield increased with increasing temperature and decreasing pressure. The maximum hydrogen yield was less than 50% in the simulation and will be lower in the real process.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.7-11
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• 2017

In this paper, we have studied the characteristics of NAND Flash memory in SONOS Poly-Si Thin Film Transistor (Poly-Si TFT) device. Source/drain junctions(S/D) of cells were not implanted and selective transistors were located in the end of cells. We found the optimum conditions of process by means of the estimation for the doping concentration of channel and source/drain of selective transistor. As the doping concentration was increased, the channel current was increased and the characteristic of erase was improved. It was believed that the improvement of erase characteristic was probably due to the higher channel potential induced by GIDL current at the abrupt junction. In the condition of process optimum, program windows of threshold voltages were about 2.5V after writing and erasing. In addition, it was obtained that the swing value of poly Si TFT and the reliability by bake were enhanced by increasing process temperature of tunnel oxide.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.15-20
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• 2007

Low temperature processed ZnO-TFTs on glass below $270^{\circ}C$ for plastic substrate applications were fabricated and their electrical properties were investigated. Films in ZnO-TFTs with bottom gate configuration were made by RF magnetron sputtering system except for $SiO_2$ gate oxide deposited by ICP-CVD. ZnO channel films were grown on glass with various Ar and $O_2$ flow ratios. All of the fabricated ZnO-TFTs showed perfectly the enhancement mode operation, a high optical transmittance of above 80% in visible ranges of the spectrum. In the ZnO-TFTs with pure Ar process, the field effect mobility, threshold voltage, and on/off ratio were measured to be $1.2\;cm^2/Vs$, 8.5 V, and $5{\times}10^5$, respectively. These characteristic values are much higher than those of the ZnO-TFTs of which ZnO channel layers were processed with additional $O_2$ gas. In addition, ZnO-TFT with pure Af process showed smaller swing voltage of 1.86v/decade compared to those with $Ar+O_2$ process.

• KSBB Journal
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• v.20 no.3
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• pp.142-148
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• 2005

Succinic acid is an important material in industries producing biodegradable polymers, food and pharmaceutical products, and green solvents. Furthermore, succinate fermentation is a novel process due to the fixation of $CO_2$ into succinate during fermentation. However, the impurities in fermentation broth make the separation process of succinic acid be difficult. Reactive extraction has been proposed to be an effective primary separation step of succinic acid from dilute fermentation broth. This article presents the principles of reactive extraction along with the characteristics of tertiary amino extractants. A brief overview on the current research on reactive extraction of succinic acid is presented. Finally, for the succinic acid separation, reactive extraction as a primary step is suggested in the whole downstream process for succinic acid from fermentation broth.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.359-365
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• 2007

In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

• Clean Technology
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• v.26 no.2
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• pp.137-144
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• 2020

Metal-impregnated activated carbons were prepared via ultrasonic-assisted impregnation method for regeneration and low ammonia concentration. Magnesium and copper were selected as metals, while chloride (Cl^-) and nitrate (NO₃^-) precursors were used to impregnate the surface of activated carbon. The physical and chemical properties of the prepared adsorbents were characterized by TGA, BET, and NH₃-TPD. The ammonia breakthrough test was carried out using a fixed bed and flowing ammonia gas (1000 mg L^-1 NH₃, balanced N₂) at 100 mL min^-1, under conditions of temperature swing adsorption (TSA) and pressure swing adsorption (PSA, 0.3, 0.5, 0.7, 0.9 Mpa). The adsorption and desorption performance of ammonia were in the order of AC-Mg(Cl) > AC-Cu(Cl) > AC-Mg(N) > AC-Cu(N) > AC through NH₃-TPD and TSA and PSA processes. AC-Mg(Cl) using MgCl₂ showed the average adsorption amount of 2.138 mmol/g at TSA process. Also, AC-Mg(Cl) showed the highest initial adsorption amount of 3.848 mmol/g at PSA 0.9 Mpa. When metal impregnated the surface of the activated carbon, it was confirmed that not only physical adsorption, but also chemical adsorption increased, making enhancement in adsorption and desorption performances possible. Also, the prepared adsorbents showed stable adsorption and desorption performances despite repeated processes, confirming their applicability in the TSA and PSA processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.487-487
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• 2013

According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1466-1469
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• 2008

We have fabricated 2.5 inch QQCIF AM-OLED panel driven by ZnO-TFT on a plastic substrate for the first time. The number of photo mask for the whole panel process was 5 and the TFT structure was top gate with active protection layer as a first gate insulator. Optimizing the process for the substrate buffer layer, active layer, ZnO protection layer, and gate insulator was key factor to achieve the TFT performance enough to drive OLED. The ZnO TFT has mobility of $5.4\;cm^2/V.s$, turn on voltage of -6.8 V, sub-threshold swing of 0.39 V/decade, and on/off ratio of $1.7{\times}10^9$. Although whole process temperature is below $150^{\circ}C$ to be suitable for the plastic substrate, performance of ZnO TFT was comparable to that fabricated at higher temperature on the glass.