• Title/Summary/Keyword: T 플립플롭

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XOR Gate Based Quantum-Dot Cellular Automata T Flip-flop Using Cell Interaction (셀 간 상호작용을 이용한 XOR 게이트 기반의 양자점 셀룰러 오토마타 T 플립플롭)

  • Yu, Chan-Young;Jeon, Jun-Cheol
    • The Journal of the Convergence on Culture Technology
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    • v.7 no.1
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    • pp.558-563
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    • 2021
  • Quantum-Dot Cellular Automata is a next-generation nanocircular design technology that is drawing attention from many research organizations not only because it is possible to design efficient circuits by overcoming the physical size limitations of existing CMOS circuits, but also because of its energy-efficient features. In this paper, one of the existing digital circuits, T flip-flop circuit, is proposed using QCA. The previously proposed T flip-flops are designed based on the majority gate, so the circuits are complex and have long delays. Therefore, the design of the XOR gate-based T flip-flop using cell interaction reduces circuit complexity and minimizes latency. The proposed circuit is simulated using QCADesigner, and the performance is compared and analyzed with the existing proposed circuits.

A Time-to-Digital Converter Using Dual Edge Flip Flops for Improving Resolution (분해능 향상을 위해 듀얼 에지 플립플롭을 사용하는 시간-디지털 변환기)

  • Choi, Jin-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.7
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    • pp.816-821
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    • 2019
  • A counter-type time-to-digital converter was designed using a dual edge T flip-flop. The time-to-digital converter was designed with a $0.18{\mu}m$ CMOS process at a supply voltage of 1.5 volts. In a typical time-to-digital converter, when the period of the clock is T, a conversion error corresponding to the period of the clock occurs due to the asynchronism between the input signal and the clock. However, the clock of the time-to-digital converter proposed in this paper is generated in synchronization with the start signal which is the input signal. As a result, conversion errors that may occur due to asynchronization of the start signal and the clock do not occur. The flip-flops constituting the counters are composed of dual-edge flip-flops operating at the positive and negative edges of the clock to improve the resolution.

Design of Synchronous Quaternary Counter using Quaternary Logic Gate Based on Neuron-MOS (뉴런 모스 기반의 4치 논리게이트를 이용한 동기식 4치 카운터 설계)

  • Choi Young-Hee;Yoon Byoung-Hee;Kim Heung-Soo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.3 s.333
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    • pp.43-50
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    • 2005
  • In this paper, quaternary logic gates using Down literal circuit(DLC) has been designed, and then synchronous Quaternary un/down counter using those gates has been proposed The proposed counter consists of T-type quaternary flip flop and 1-of-2 threshold-t MUX, and T-type quaternary flip flop consists of D-type quaternary flip flop and quaternary logic gates(modulo-4 addition gates, Quaternary inverter, identity cell, 1-of-4 MUX). The simulation result of this counter show delay time of 10[ns] and power consumption of 8.48[mW]. Also, assigning the designed counter to MVL(Multiple-valued Logic) circuit, it has advantages of the reduced interconnection and chip area as well as easy expansion of digit.

Design and Fabrication of High Temperature Superconducting Rapid Single Flux Quantum T Flip-Flop (고온 초전도 단자속 양자 T 플립 플롭 설계 및 제작)

  • Kim, J. H.;Kim, S. H.;Jung, K. R.;Kang, J. H.;Syng, G. Y.
    • Progress in Superconductivity
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    • v.3 no.1
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    • pp.87-90
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    • 2001
  • We designed a high temperature superconducting rapid single flux quantum(RSFQ) T flip-flop(TFF) circuit using Xic and WRspice. According to the optimized circuit parameters, we fabricated the TFF circuit with $Y_1$$Ba_2$Cu$_3$$O_{7-x}$(YBCO) interface-controlled Josephson junctions. The whole circuit was comprised of five epitaxial layers including YBCO ground plane. The interface-controlled Josephson junction was fabricated with natural junction barrier that was formed by interface-treatment process. In addition, we report second design for a new flip-flop without ground palne.e.

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High-level Modeling and Test Generation With VHDL for Sequential Circuits (상위레벨에서의 VHDL에 의한 순차회로 모델링과 테스트생성)

  • Lee, Jae-Min;Lee, Jong-Han
    • The Transactions of the Korea Information Processing Society
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    • v.3 no.5
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    • pp.1346-1353
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    • 1996
  • In this paper, we propose a modeling method for the flip-flops and test generation algorithms to detect the faults in the sequential circuits using VHDL in the high-level design environment. RS, JK, D and T flip-flops are modeled using data flow types. The sequence of micro-operation which is the basic structure of a chip-level leads to a control point where varnishing occurs to one of two micro- operation sequence. In order to model the fault of one micro-operation(FMOP) that perturb another micro-operation effectively, the concept of goal trees and some heuristic rules are used. Given a faulty FMOP or fault of control point (FCON), a test pattern is generated by fault sensitization, path sensitization and determination of the imput combinations that will justify the path sensitization. The fault models are restricted to the data flow model in the ARCHITECTURE statement of VHDL. The proposed algorithm is implemented in the C language and its efficiency is confirmed by some examples.

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A Mismatch-Insensitive 12b 60MS/s 0.18um CMOS Flash-SAR ADC (소자 부정합에 덜 민감한 12비트 60MS/s 0.18um CMOS Flash-SAR ADC)

  • Byun, Jae-Hyeok;Kim, Won-Kang;Park, Jun-Sang;Lee, Seung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.7
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    • pp.17-26
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    • 2016
  • This work proposes a 12b 60MS/s 0.18um CMOS Flash-SAR ADC for various systems such as wireless communications and portable video processing systems. The proposed Flash-SAR ADC alleviates the weakness of a conventional SAR ADC that the operation speed proportionally increases with a resolution by deciding upper 4bits first with a high-speed flash ADC before deciding lower 9bits with a low-power SAR ADC. The proposed ADC removes a sampling-time mismatch by using the C-R DAC in the SAR ADC as the combined sampling network instead of a T/H circuit which restricts a high speed operation. An interpolation technique implemented in the flash ADC halves the required number of pre-amplifiers, while a switched-bias power reduction scheme minimizes the power consumption of the flash ADC during the SAR operation. The TSPC based D-flip flop in the SAR logic for high-speed operation reduces the propagation delay by 55% and the required number of transistors by half compared to the conventional static D-flip flop. The prototype ADC in a 0.18um CMOS demonstrates a measured DNL and INL within 1.33LSB and 1.90LSB, with a maximum SNDR and SFDR of 58.27dB and 69.29dB at 60MS/s, respectively. The ADC occupies an active die area of $0.54mm^2$ and consumes 5.4mW at a 1.8V supply.

A Non-Calibrated 2x Interleaved 10b 120MS/s Pipeline SAR ADC with Minimized Channel Offset Mismatch (보정기법 없이 채널 간 오프셋 부정합을 최소화한 2x Interleaved 10비트 120MS/s 파이프라인 SAR ADC)

  • Cho, Young-Sae;Shim, Hyun-Sun;Lee, Seung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.9
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    • pp.63-73
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    • 2015
  • This work proposes a 2-channel time-interleaved (T-I) 10b 120MS/s pipeline SAR ADC minimizing offset mismatch between channels without any calibration scheme. The proposed ADC employs a 2-channel SAR and T-I topology based on a 2-step pipeline ADC with 4b and 7b in the first and second stage for high conversion rate and low power consumption. Analog circuits such as comparator and residue amplifier are shared between channels to minimize power consumption, chip area, and offset mismatch which limits the ADC linearity in the conventional T-I architecture, without any calibration scheme. The TSPC D flip-flop with a short propagation delay and a small number of transistors is used in the SAR logic instead of the conventional static D flip-flop to achieve high-speed SAR operation as well as low power consumption and chip area. Three separate reference voltage drivers for 4b SAR, 7b SAR circuits and a single residue amplifier prevent undesirable disturbance among the reference voltages due to each different switching operation and minimize gain mismatch between channels. High-frequency clocks with a controllable duty cycle are generated on chip to eliminate the need of external complicated high-frequency clocks for SAR operation. The prototype ADC in a 45nm CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 0.77LSB, with a maximum SNDR and SFDR of 50.9dB and 59.7dB at 120MS/s, respectively. The proposed ADC occupies an active die area of 0.36mm2 and consumes 8.8mW at a 1.1V supply voltage.

An Efficient Test Data Compression/Decompression for Low Power Testing (저전력 테스트를 고려한 효율적인 테스트 데이터 압축 방법)

  • Chun Sunghoon;Im Jung-Bin;Kim Gun-Bae;An Jin-Ho;Kang Sungho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.2 s.332
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    • pp.73-82
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    • 2005
  • Test data volume and power consumption for scan vectors are two major problems in system-on-a-chip testing. Therefore, this paper proposes a new test data compression/decompression method for low power testing. The method is based on analyzing the factors that influence test parameters: compression ratio, power reduction and hardware overhead. To improve the compression ratio and the power reduction ratio, the proposed method is based on Modified Statistical Coding (MSC), Input Reduction (IR) scheme and the algorithms of reordering scan flip-flops and reordering test pattern sequence in a preprocessing step. Unlike previous approaches using the CSR architecture, the proposed method is to compress original test data, not $T_{diff}$, and decompress the compressed test data without the CSR architecture. Therefore, the proposed method leads to better compression ratio with lower hardware overhead and lower power consumption than previous works. An experimental comparison on ISCAS '89 benchmark circuits validates the proposed method.