• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.51-54
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• 1996

This paper reports the studies of the inversion layer mobility in p-channel Si MOSFET's under hot-carrier degradated condition. The validity of relationship of hot carrier degradations between the surface effective mobility and field effect mobility and are examined. The effective mobility(${\mu}$$\_$eff/) is derived from the channel conductances, while the field-effect mobility(${\mu}$$\_$FE/) is obtained from the transconductance. The characteristics of mobility curves can be divided into the 3 parts of curves. It was reported that the mobility degradation is due to phonon scattering, coulombic scattering and surface roughness. We are measured the mobility slope in curves with DC-stress [V$\_$g/=-3.1v]. It was found that the mobility(${\mu}$$\_$eff/ and ${\mu}$$\_$FE/) of p-MOSFET's was increased by increasing stress time and decreasing channel length. Because of the increasing stress time and increasing V$\_$g/ is changed oxide reliability and increased vertical field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• International Journal of Precision Engineering and Manufacturing
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• v.9 no.3
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• pp.13-17
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• 2008

This paper deals with the directional mobility of droplets on structured surfaces. Structured surfaces were micro-patterned with rectangular lines and spaces of varying pitch and height in the sub-millimeter range. The material used was polydimethylsiloxane, which is hydrophobic and wettable by oil. First, we studied the effect of the structural design on the sliding angle of pure water or oil through experiments. For pure water droplets, we found that a wider pitch enhanced the directionality. On the other hand, oil droplets spread along the groove because of their low surface tension and strong capillary force. The directionality of the sliding angle of oil droplets was larger than that of pure water, especially when the groove was narrower and deeper. Second, we poured a large amount of liquid on the structure and evaluated the removal rate on the tilted surface. We found that a parallel structure enhanced the liquid mobility for both pure water and oil.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.174-179
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• 1996

We present a new physically based analytical equation for electron effective mobility in MOS inversion layers. The new semi-empirical model is accounting expicitly for surface roughness scattering and screened Coulomb scattering in addition to phonon scattering. This model shows excellent agreement with experimentally measured effective mobility data from three different published sources for a wide range of effective transverse field, channel doping and temperature. By accounting for screened Coulomb scattering due to doping impurities in the channel, our model describes very well the roll-off of effective mobility in the low field (threshold) region for a wide range of channel doping level (Na=3.0*10$^{14}$ - 2.8*10$^{18}$ cm$^{-3}$ ).

• Journal of Astronomy and Space Sciences
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• v.29 no.4
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• pp.413-422
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• 2012

In recent years, a number of missions have been planned and conducted worldwide on the planets such as Mars, which involves the unmanned robotic exploration with the use of rover. The rover is an important system for unmanned planetary exploration, performing the locomotion and sample collection and analysis at the exploration target of the planetary surface designated by the operator. This study investigates the development of mobility system for the rover ground model necessary to the planetary surface exploration for the benefit of future planetary exploration mission in Korea. First, the requirements for the rover mobility system are summarized and a new mechanism is proposed for a stable performance on rough terrain which consists of the passive suspension system with 8 wheeled double 4-bar linkage (DFBL), followed by the performance evaluation for the mechanism of the mobility system based on the shape design and simulation. The proposed mobility system DFBL was compared with the Rocker-Bogie suspension system of US space agency National Aeronautics and Space Administration and 8 wheeled mobility system CRAB8 developed in Switzerland, using the simulation to demonstrate the superiority with respect to the stability of locomotion. On the basis of the simulation results, a general system configuration was proposed and designed for the rover manufacture.

• IEMEK Journal of Embedded Systems and Applications
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• v.17 no.3
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• pp.149-155
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• 2022

This paper proposes a method for estimating the road surface condition and tilt angle using an inertial measurement unit (IMU) to improve the safety in the use of mobility aids for the elderly. The measurements of the accelerometers of the IMU usually include the accelerations caused by not only the gravitational force but also linear and rotational motions. Thus, the gravitational accelerations are first extracted using several physical constraints and then incorporated into the Kalman filter to estimate the tilt angle. In addition, because the magnitudes of the accelerations produced by the rotational motions (roll and pitch motions) vary with the road surface condition, a criterion based on such accelerations is presented to classify the condition of the road surface. The obtained road surface condition and tilt angle are finally combined to provide the safety information (e.g., safe, warning, and danger) for the user to improve the walking safety. Experiments were carried out and the results showed that the proposed method can provide the condition of the road surface, the tilt of the road surface, and the safety information correctly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.7-8
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness ($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. The enhancement of effective hole mobility at the effective field of 0.1 MV/ccm was observed from 3-nm to 5-nm SOI thickness range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.518-524
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• 2014

The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schr$\ddot{o}$dinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.