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http://dx.doi.org/10.4313/JKEM.2007.20.11.939

Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body(UTB) Silicon-on-insulator(SOI) Metal Oxide Semiconductors Field Effect Transistor  

Kim, Kwan-Su (광운대학교 전자재료공학과)
Cho, Won-Ju (광운대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.11, 2007 , pp. 939-942 More about this Journal
Abstract
We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.
Keywords
Ultrathin-body; SOI; Hole mobility enhancement; Quantum confinement effect;
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