Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)
- 2013.05a
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- Pages.97-97
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- 2013
Improvement of carrier transport in silicon MOSFETs by using h-BN decorated dielectric
- Liu, Xiaochi (SKKU Advanced Institute of Nano-Technology, Sungkyunkwan University) ;
- Hwang, Euyheon (SKKU Advanced Institute of Nano-Technology, Sungkyunkwan University) ;
- Yoo, Won Jong (SKKU Advanced Institute of Nano-Technology, Sungkyunkwan University)
- Published : 2013.05.30
Abstract
We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between
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