Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.7-8
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- 2007
Hole Mobility Enhancement in (100)- and (110)-surfaces of Ultrathin-Body Silicon-on-Insulator Metal-Oxide-Semiconductors
Ultrathin-Body SOI MOSFETs에서 면방향에 따른 정공의 이동도 증가
- Kim, Kwan-Su (Department of Electronic materials engineering, Kwangwoon Univ) ;
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Koo, Sang-Mo
(Department of Electronic materials engineering, Kwangwoon Univ) ;
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Chung, Hong-Bay
(Department of Electronic materials engineering, Kwangwoon Univ) ;
- Jung, Jong-Wan (Dept. of Nano-Sci. & Tech, Sejong Univ.) ;
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Cho, Won-Ju
(Department of Electronic materials engineering, Kwangwoon Univ)
- 김관수 (광운대학교 전자재료공학과) ;
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구상모
(광운대학교 전자재료공학과) ;
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정홍배
(광운대학교 전자재료공학과) ;
- 정종완 (세종대학교 나노신소재공학부) ;
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조원주
(광운대학교 전자재료공학과)
- Published : 2007.06.21
Abstract
We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness (