JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Substrate Doping Concentration Dependence of Electron Mobility Enhancement in Uniaxial Strained (110)/<110> nMOSFETs

  • Sun, Wookyung (Department of Electronic Engineering, Ewha Womans University) ;
  • Choi, Sujin (Department of Electronic Engineering, Ewha Womans University) ;
  • Shin, Hyungsoon (Department of Electronic Engineering, Ewha Womans University)
  • Received : 2014.05.01
  • Accepted : 2014.07.27
  • Published : 2014.10.30
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Abstract

The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schr$\ddot{o}$dinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.

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References

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