• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.911-913
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• 1999

Shallow Trench Isolation (STI) has become the most promising isolation scheme for ULSI applications. The stress of STI structure is one of several factors to degrade characteristics of a device. The stress contours or STI structure vary with the trench depth. Isolation characteristics of STI was analyzed as the depth of trench varied. And transistor characteristics was compared. Isolation punch-through voltage for n$^{＋}$ to pwell and p$^{＋}$ to nwell increased as trench depth increased. n$^{＋}$ to pwell leakage current had nothing to do with trench depth but n$^{＋}$ to pwell leakage current decreased as trench depth increased. In the case of transistor characteristics, short channel effect was independent on trench depth and inverse narrow width effect was greater for deeper trenches. Therefore in order to achieve stable device, it is important to minimize stress by optimizing trench depth.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1771-1777
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• 2016

In this thesis, the breakdown voltage characteristics of silicon nanowire N-channel GAA MOSFETs were analyzed through experiments and 3-dimensional device simulation. GAA MOSFETs with the gate length of 250nm, the gate dielectrics thickness of 6nm and the channel width ranged from 400nm to 3.2um were used. The breakdown voltage was decreased with increasing gate voltage but it was increased at high gate voltage. The decrease of breakdown voltage with increasing channel width is believed due to the increased current gain of parasitic transistor, which was resulted from the increased potential in channel center through floating body effects. When the positive charge was trapped into the gate dielectrics after gate stress, the breakdown voltage was decreased due to the increased potential in channel center. When the negative charge was trapped into the gate dielectrics after gate stress, the breakdown voltage was increased due to the decreased potential in channel center. We confirmed that the measurement results were agreed with the device simulation results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.69-75
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• 2003

Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.1
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• pp.12-17
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• 2002

Abstract The flow of liquid and vapor is investigated in trapezoidal grooves. The effect of variable shear stress along the interface of the liquid and vapor is studied for both co-current and counter-current flows. Velocity contours and results for the friction are obtained for both trapezoidal grooves. An approximate relation that was previously utilized for the friction for the liquid was modified to obtain accurate agreement with the results for trapezoidal grooves.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.9
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• pp.1615-1622
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• 2008

We have fabricated the poly-silicon thin film transistor(TFT) which has the LDD-region with graded spacer. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $H_2$/plasma processes were fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring/analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplicities of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1258-1261
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• 2004

Degradation phenomenon in the low-temperature polysilicon (LTPS) thin-film transistors (TFTs) with different junction structures was investigated. A gate-overlapped lightly doped drain (GOLDD) structure showed better hot-carrier stress (HCS) stability than a conventional LDD one. On the other hand, high drain current stress (HDCS) at $V_{gs}$ = $V_{ds}$ conditions caused much severe device degradation in the GOLDD structure because of its higher current level resulting in the higher applied power. It is suggested that self-heating-induced mobility degradation in the GOLDD TFFs be suppressed for using this structure in short-channel devices.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.10a
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• pp.481-486
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• 1997

The interfacial shear stress is experimentally investigated for co-current air-water stratified flow in inclined rectangular channels having a length of 1854mm, width of 120mm and height of 40mm at almost atmospheric pressure. Experiments are carried out in several inclinations from $0^{\circ}\;up\;to\;10^{\circ}$. The local film thickness and the wave height are measured at three locations, i.e., L/H = 8,23, and 40. According to the inclination angle, the experimental data are categorized into two groups; nearly horizontal data group ($0^{\circ}\;{\leq}\;{\theta}\;{\leq}\;0.7^{\circ}$), and inclined channel data group ($0.7^{\circ}\;{\leq}\;{\theta}\;{\leq}\;10^{\circ}$). Experimental observations for nearly horizontal data group show that the flow is not fully developed due to the water level gradient and the hydraulic jump within the channel. For the inclined channel data group, a dimensionless wave height, $\Delta$h/h, is empirically correlated in terms of $Re_{G}$ and h/H. A modified root-mean-square wave height is proposed to consider the effects of the interfacial and wave propagation velocities. It is found that an equivalent roughness has a linear relationship with the modified root-mean-square wave height and its relationship is independent of the inclination.

• Molecules and Cells
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• v.37 no.6
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• pp.435-440
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• 2014

Hemodynamic shear stress, the frictional force acting on vascular endothelial cells, is crucial for endothelial homeostasis under normal physiological conditions. When discussing blood flow effects on various forms of endothelial (dys)function, one considers two flow patterns: steady laminar flow and disturbed flow because endothelial cells respond differently to these flow types both in vivo and in vitro. Laminar flow which exerts steady laminar shear stress is atheroprotective while disturbed flow creates an atheroprone environment. Emerging evidence has provided new insights into the cellular mechanisms of flowdependent regulation of vascular function that leads to cardiovascular events such as atherosclerosis, atherothrombosis, and myocardial infarction. In order to study effects of shear stress and different types of flow, various models have been used. In this review, we will summarize our current views on how disturbed flow-mediated signaling pathways are involved in the development of atherosclerosis.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.1A
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• pp.80-86
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• 2010

This work has been measured and analyzed the device degradation of NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOS transistors of gate channel length 0.13 [${\mu}m$]. From the relation between the variation of threshold voltage and subthreshold slop by NBTI stress, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. As a results, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress parameters of nanoscale CMOS communication circuit design.

• Journal of Biosystems Engineering
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• v.39 no.3
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• pp.244-252
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• 2014

Purpose: The development of an efficient in vitro cell culture device to process various cells would represent a major milestone in biological science and engineering. However, the current conventional macro-scale in vitro cell culture platforms are limited in their capacity for detailed analysis and determination of cellular behavior in complex environments. This paper describes a microfluidic-based culture device that allows accurate control of parameters of physical cues such as pressure. Methods: A microfluidic device, as a model microbioreactor, was designed and fabricated to culture Saccharomyces cerevisiae and Chlamydomonas reinhardtii under various conditions of physical pressure stimulus. This device was compatible with live-cell imaging and allowed quantitative analysis of physical cue-induced behavior in yeast and microalgae. Results: A simple microfluidic-based in vitro cell culture device containing a cell culture channel and an air channel was developed to investigate physical pressure stress-induced behavior in yeasts and microalgae. The shapes of Saccharomyces cerevisiae and Chlamydomonas reinhardtii could be controlled under compressive stress. The lipid production by Chlamydomonas reinhardtii was significantly enhanced by compressive stress in the microfluidic device when compared to cells cultured without compressive stress. Conclusions: This microfluidic-based in vitro cell culture device can be used as a tool for quantitative analysis of cellular behavior under complex physical and chemical conditions.