• Korean Journal of Materials Research
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• v.16 no.9
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• pp.571-577
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• 2006

We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.288-291
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• 2002

Application of metal silicides such as TiSi$_2$ and CoSi$_2$ as contacts and gate electrodes are being studied. However, TiSi$_2$ due to the linewidth-dependance, and CoSi$_2$ due to the excessive Si consumption during silicidation cannot be applied to the deep-submicron MOSFET device. NiSi shows no such problems and can be formed at the low temperature. But, NiSi shows thermal instability. In this investigation, NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited by the thermal evaporator. The samples were then annealed in the N$_2$ ambient at 300-800$^{\circ}C$ in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700$^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600$^{\circ}C$. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.

• Journal of Electrochemical Science and Technology
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• v.5 no.2
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• pp.37-44
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• 2014

The $Li-O_2$ battery has been attracting much attention recently, due to its very high theoretical capacity compared with Li-ion chemistries. Nevertheless, several studies within the last few years revealed that Li-ion derived electrolytes based on alkyl carbonate solvents, which have been commonly used in the last 27 years, are irreversibly consumed at the $O_2$ electrode. Accordingly, more stable electrolytes are required capable to operate with both the Li metal anode and the $O_2$ cathode. Thus, due to their favorable properties such as non volatility, chemical inertia, and favorable behavior toward the Li metal electrode, ionic liquid-based electrolytes have gathered increasing attention from the scientific community for its application in $Li-O_2$ batteries. However, the scale-up of Li-$O_2$ technology to real application requires solving the mass transport limitation, especially for supplying oxygen to the cathode. Hence, the 'LABOHR' project proposes the introduction of a flooded cathode configuration and the circulation of the electrolyte, which is then used as an oxygen carrier from an external $O_2$ harvesting device to the cathode for freeing the system from diffusion limitation.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2598-2602
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• 2010

Two 3-D zinc framework compounds, $[Zn_6(BTB)_4(4,4'-bipy)_4(H_2O)_4]{\cdot}9H_2O$ (1) and $[Zn_3(BTB)_2(4,4'-bipy)_2(H_2O)_2]{\cdot}5H_2O$ (2) ($H_3BTB$ = 1,2,3-benzenetricarboxylic acid, 4,4'-bipy = 4,4'-bipyridine), are obtained from the diffusion method and hydrothermal reaction respectively. Though 1 and 2 has the same coordination geometries of zinc atoms and coordination mode of $BTB^{3-}$, their 2-D layers are different: mirror symmetric layers in 1; parallel ones in 2, further connecting by 4,4'-bipy into 3-D frameworks. The hydrothermal reaction of 2 results in a more stable 3-D framework than the one in 1, which is supported by the single point energy calculations. 1 and 2 show similar blue fluorescence at 417 nm, which can be assigned to LMCT.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.5
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• pp.79-84
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• 2017

This paper is a multi-input multi-path (Multiple-input multiple-output: MIMO) using a space-alternating generalized expectation maximization(SAGE) algorithm in the parameter channel and determine the channel estimation performance. Estimated by the algorithm, SAGE time-varying channel environment, the channel parameters estimated from the parameters of the channel measured in the island region 781 of the band in order to compare the performance and compares the original data. This allows you to check the performance of the algorithm SAGE and is highly stable to delay spread (Delay Spread), the diffusion angle of arrival (Arrive of Angular Spread) performance in terms of accuracy down through the SAGE algorithm for estimating a more general calculation parameters.

• Journal of Technologic Dentistry
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• v.28 no.1
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• pp.19-26
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• 2006

The effect of Nb on interfacial bonding characteristics of Ni-Cr alloy for porcelain fused to metal crown (PFM) has been studied in order to investigate oxide layer. A specimens of Ni-Cr alloy, which is 0.8mm in thickness, within the porcelain furnace of 1,000$^{\circ}C$ with four tests such as air, vacuum, air for 5 minutes and vacuum for 5 minutes in order to examine an oxide behavior of alloy surface generated by the adding of Nb to be controlled at a rate of 0, 1, 3 and 5. Oxide film was observed form of the fired specimens with scanning electron microscope (SEM), and at the same time it measured Electron Probe Micro Analyzer (EPMA). The result of this study were as follows: 1. Cr oxide film and Nb oxide film were observed from the surface of specimen to be controlled at a rate of Nb 1%. 2. Nb oxide film was observed from the interface of specimens to be controlled at a rate of Nb 1% and 3%. 3. The stability of oxide films that treated in air were more stable than treated under vacuum.

• Journal of Physiology & Pathology in Korean Medicine
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• v.22 no.5
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• pp.1196-1201
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• 2008

A examination of the kinetic properties of UDP-glucose : (1,3)-$\beta$-glucan (callose) synthase from mung bean seedings (Sorbus cortex) shows that these enzymes have a complex interaction with UDP-glucose and various effectors. Deoxynojirimycin increased the inhibitory effect of (1,3)-$\beta$-glucan synthase at the concentration-dependent manner by fluorescence assay. The inhibitory effect of Fr. 2-16 (97.15%) showed higher than that of deoxynojirimycin (80.63%). Fr. 2-3 inhibited the growth of the Candida albicans at 1 mm inhibition zone by disk diffusion method. These results suggest that Sorbus cortex extract can be used as a stable antifungal material.

• Journal of the Korean Society for Heat Treatment
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• v.9 no.3
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• pp.219-227
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• 1996

The purpose of this research is to develop the technology for the synthesis of (Ti,Al)N powder, which shows simultaneously the excellent properties of TiN and AlN, from the Ti-Al intermetallic compounds by the direct nitriding method. The effects of variables such as temperature, Ti-Al intermetallic compounds ($TiAl_3$, TiAl and $Ti_3Al$) were investigated by TG, XRD and SEM. The (Ti,Al)N powder can be easily synthesized from the intermetallic compounds by the direct nitriding method. Among the intermetallic compounds, the nitriding behavior increased with TiAl> $Ti_3Al$ > $TiAl_3$, as the difference of diffusion coefficient for nitrogen in each materials. The ternary nitride such as $Ti_2AlN$ and $Ti_3Al_2N_2$ can be synthesized by the direct nitriding method, although the ternary nitride coexist with TiN and AlN. The ternary nitrides are stable below $1400^{\circ}C$, but these are gradually decomposed into TiN and AlN above $1400^{\circ}C$.

• Journal of the Korean Society of Industry Convergence
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• v.18 no.1
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• pp.18-29
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• 2015

This paper presents a feasibility study of a fresh air load reduction system by using an underground double floor space. The system was introduced into a real building and was examined by the field measurement. Judging from the measurements during three years(1999~2001), the state of the system operation was very stable through this period and it was clear that the system contributes to reduction of energy consumption for air-conditioning. Futhermore, a simulation model used the simple heat diffusion equation was developed to simulate its thermal characteristics and performances. The simulations resulted in air temperature in good agreement with the measurements. Also, from the result of numerical analysis, it is clear that the amount of heat supply by using this system is more than the amount of energy loss to the room above it. Therefore, it is concluded that this systems is very useful and the proposed numerical model can be used for the prediction of system thermal performance.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.