• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.97-103
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• 2014

Among various lead-free solders, the Sn-58Bi solders have been considered as a highly promising lead-free solders because of its low melting temperature and high tensile strength. However, Sn-58Bi solder has the poor ductility. To enhance the mechanical property of Sn-58Bi solder, epoxy-enhanced Sn-58Bi solders have been studied. This study compared the microstructures and the mechanical properties of Sn-58Bi solder and Sn-58Bi epoxy solder with aging treatment. The solders ball were formed on the printed circuit board (PCB) with organic solderability preservative (OSP) surface finish, and then the joints were aged at 85, 95, 105 and $115^{\circ}C$ for up to 100, 300, 500 and 1000 hours. The shear test was conducted to evaluate the mechanical property of the solder joints. $Cu_6Sn_5$ intermetallic compound (IMC) layer grew with increasing aging time and temperature. The IMC layer for the Sn-58Bi epoxy solder was thicker than that for the Sn-58Bi solder. According to result of shear test, the shear strength of Sn-58Bi epoxy solder was higher than that of Sn-58Bi solder and the shear strength decreased with increasing aging time.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.163-169
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• 2019

Sn-Pb solder alloys in electronics rapidly has been replaced to Pb free solder alloys because of various environmental regulations such as restriction of hazardous substances directive (RoHS), European Union waste electrical, waste electrical and electronic equipment (WEEE), registration evaluation authorization and of chemicals (REACH) etc. Because Sn58%Bi (in wt.%) solder alloy has low melting point and higher mechanical properties than that of Sn-Pb solder, it has been studied to manufacture electronic components. However, the reliability of Sn58%Bi solder could be lowered because of the brittleness of Bi element included in the solder alloy. Therefore, we observed the microstructures of Sn58%Bi composite solders with various contents of Sn-decorated multiwalled carbon nanotube (Sn-MWCNT) particles and evaluated bonding strength of the FR-4 components assembled with Sn58%Bi composite solder. Also, microstructures and bonding strengths of the Sn58%Bi composite solder joints were evaluated with the number of reflows from 1 to 7 times, respectively. Bonding strengths and fracture energies of the Sn58%Bi composite solder joints were measured by die shear test. Microstructures and fracture modes were observed with scanning electron microscope (SEM). Microstructures in the Sn58%Bi composite solder joints were finer than that of only Sn58%Bi solder joint. Bonding strength and fracture energy of Sn58%Bi composite solder including 0.1 wt.% of Sn-decorated MWCNT particles increased up to 20.4% and 15.4% at 5 times in reflow, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.61-67
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• 2003

The interfacial reaction between ultra-small 58Bi-42Sn solder and Au/Ni/Ti under bump metallurgy (UBM) for ultra-fine flip chip application was investigated. The ultra-small 58Bi-42Sn solder bump, about $46{\mu}m$ in diameter, was fabricated by using the lift-off method and reflowed using the rapid thermal annealing (RTA) system. The intermetallic compounds were characterized using a secondary electron microscopy (SEM), an energy dispersive spectroscopy (EDS), and an x-ray diffractometer (XRD). The faceted and polygonal intermetallic compounds were found in the Bi-Sn solder bumps on $Au(0.1{\mu}m)/Ni/Ti$ UBM and they were indentified as $(Au_xBi_yNi_{1-x-y})Sn_2$ Phase. The intermetallic compounds grown from the $Au(0.1{\mu}m)/Ni/Ti$ UBMinterface were dispersed in the solder bump.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.95-103
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• 2021

Sn-58Bi-xRu composite solders were prepared by adding Ru nanoparticles to Sn-58Bi, a typical low-temperature solder, and the interfacial reaction and solder joint reliability were analyzed by reacting with Cu/OSP and ENIG surface treated PCB boards. The Cu₆Sn₅ IMC formed by the reaction with Cu/OSP had little change in thickness depending on the Ru content, and ductile fracture occurred inside the solder during the high-speed shear test without any significant change even after 100 hr aging. In reaction with ENIG, the Ni₃Sn₄ IMC thickness tended to decrease as the Ru content increased, and ENIG-specific brittle fracture was found in some specimens. Since Ru element is not found near the interface, it is judged not to be significantly involved in the interfacial reaction, and it is analyzed that it mainly exists together with the Bi phase.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.1-10
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• 2022

Recently, semiconductor devices have been used in many fields owing to various applications of mobile electronics, wearable and flexible devices and substrates. During the semiconductor chip bonding process, the mismatch of coefficient of therm al expansion (CTE) between the substrate and the solder, and the excessive heat applied to the entire substrate and components affect the performance and reliability of the device. These problems can cause warpage and deterioration of long-term reliability of the electronic packages. In order to improve these issues, many studies on low-melting temperature solders, which is capable of performing a low-temperature process, have been actively conducted. Among the various low-melting temperature solders, such as Sn-Bi and Sn-In, Sn-58Bi solder is attracting attention as a promising low-temperature solder because of its advantages such as high yield strength, moderate mechanical property, and low cost. However, due to the high brittleness of Bi, improvement of the Sn-Bi solder is needed. In this review paper, recent research trends to improve the mechanical properties of Sn-Bi solder by adding trace elements or particles were introduced and compared.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.95-103
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• 2005

The interfacial reaction between 42Sn-58Bi solder (in wt.$\%$ unless specified otherwise) and electroless Ni-P/immersion Au has been investigated before and after thermal aging, with a focus on formation and growth of an intermetallic compound (IMC) layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 (bare Ni), 0.1, and $1{\mu}m$ was plated on the $5{\mu}m$ thick electroless Ni-P ($14{\~}15 at.\%$P) layer. Then, the 42Sn-58Bi solder balls were fabricated on three different UBM structures by screen-printing and pre-reflow. The $Ni_3Sn_4$ layer (IMC1) was formed at the joint interface after pre-reflow for all the three UBM structures. On aging at $125^{\circ}C$, a quaternary phase (IMC2) was observed above the $Ni_3Sn_4$ layer in the Au-containing UBM structures, which was identified as $Sn_{77}Ni{15}Bi_6Au_2$ (in at.$\%$). The thick $Sn_{77}Ni{15}Bi_6Au_2$ layer deteriorated the integrity of the solder joint and the shear strength of the solder bump was decreased by about $40\%$ compared with non-aged joints.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.68-71
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• 2003

The reaction of ultra-small eutectic 58Bl-42Sn solder bump with Au/Ni/Ti and Au/Cu/Ti UBMs during reflow was studied. The eutectic Bi-Sn solder bumps of $46{\mu}m$ diameter were fabricated by using the evaporation method and were reflowed using the rapid thermal annealing system. The intermetallic compound was characterized using a SEM, an EDS, and an XRD. The $(Cu_xAu_{1-x})_6Sn_5$ compounds formed at the interface between Bi-Sn solder and Au/Cu/Ti UBM. On the other hand, in the Bi-Sn solder bump on Au/Ni/Ti UBM, the faceted and rectangular intermetallic compounds were observed on the solder bump surface and inside the solder bump as well as at the UBM interface. These intermetallic compounds were Identified as $(Au_{l-x-y}Bi_xNi_y)Sn_2$ phase.

• Journal of Welding and Joining
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• v.23 no.3
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• pp.61-67
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• 2005

Since lead (Pb)-free solders for electronics have higher melting points than that of eutectic Sn-Pb solder, they need higher soldering temperatures. In order to decrease the soldering temperature we tried to coat Sn-Bi layer on $Sn-3.5\%Ag$ solder by electroplating, which applies the mechanism of transient liquid phase bonding to soldering. During heating Bi will diffuse into the $Sn-3.5\%Ag$ solder and this results in decreasing soldering temperature. As bonding samples, the 1608 capacitor electroplated with Sn, and PCB, its surface was finished with electroless-plated Ni/Au, were selected. The $Sn-95.7\%Bi$ coated Sn-3.5Ag was supplied as a solder between the capacitor and PCB land. The samples were reflowed at $220^{\circ}C$, which was lower than that of normal reflow temperature, $240\~250^{\circ}C$, for the Pb-free. As experimental result, the joint of $Sn-95.7\%Bi$ coated Sn-3.5Ag showed high shear strength. In the as-reflowed state, the shear strength of the coated solder showed 58.8N, whereas those of commercial ones were 37.2N (Sn-37Pb), 31.4N (Sn-3Ag-0.5Cu), and 40.2N (Sn-8Zn-3Bi). After thermal shock of 1000 cycles between $-40^{\circ}C$ and $+125^{\circ}C$, shear strength of the coated solder showed 56.8N, whereas the previous commercial solders were in the range of 32.3N and 45.1N. As the microstructures, in the solder $Ag_3Sn$ intermetallic compound (IMC), and along the bonded interface $Ni_3Sn_4$ IMC were observed.

• ETRI Journal
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• v.38 no.6
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• pp.1163-1171
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• 2016

Integration technologies involving flexible substrates are receiving significant attention owing the appearance of new products regarding wearable and Internet of Things technologies. There has been a continuous demand from the industry for a reliable bonding method applicable to a low-temperature process and flexible substrates. Up to now, however, an anisotropic conductive film (ACF) has been predominantly used in applications involving flexible substrates; we therefore suggest low-temperature lead-free soldering and bonding processes as a possible alternative for flex-on-flex applications. Test vehicles were designed on polyimide flexible substrates (FPCBs) to measure the contact resistances. Solder bumping was carried out using a solder-on-pad process with Solder Bump Maker based on Sn58Bi for low-temperature applications. In addition, thermocompression bonding of FPCBs was successfully demonstrated within the temperature of $150^{\circ}C$ using a newly developed fluxing underfill material with fluxing and curing capabilities at low temperature. The same FPCBs were bonded using commercially available ACFs in order to compare the joint properties with those of a joint formed using solder and an underfill. Both of the interconnections formed with Sn58Bi and ACF were examined through a contact resistance measurement, an $85^{\circ}C$ and 85% reliability test, and an SEM cross-sectional analysis.