• Clean Technology
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• v.7 no.1
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• pp.27-34
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• 2001

The waste slurry generated from CMP process contains particulate and heavy metals. It is hard to treat the waste slurry by conventional treatment method because the particulates in the waste are too fine to be easily separated the solid from the waste for the purpose of water recycling. The investigation was focused on finding the optimum condition of coagulation with two different coagulants. When the solid content in the waste slurry solution was 0.1wt%, the optimal ranges of pH and PACl concentration were 4~6 and 20~50 mg/L, respectively. When the solid content was increased to 0.5wt%, the optimal condition was 4~5 for pH and 50~100 mg/L for PACl concentration.

• Journal of Animal Environmental Science
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• v.8 no.2
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• pp.111-114
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• 2002

This study was conducted to determine the volume of pig slurry productinn and the characteristics from 4 swine farms. For the composition of pig slurry produced, contents of N, $P_2O_5$ and $K_2O$, were 0.13, 0.25 and 0.13% in slurry, respectively. Water pollutant concentration in slurry of swine farms, $BOD_5$, $COD_MN$, SS, T-N and T-P, was $24,047mg/{\ell}$, $30,232mg/{\ell}$, $36,833mg/{\ell}$, $2,805mg/{\ell}$, $465mg/{\ell}$, respectively. The average volume of pig slurry was 6.30 ${\ell}/head/day$ and 6.32 ${\ell}$ in spring, 6.69 ${\ell}$ in summer, 6.09 ${\ell}$ in autumn, and 6.12 ${\ell}$ in winter. The average moisture content of slurry was 95.8%. The composition of slurry produced by pig farms.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.164-168
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• 2005

Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.29-32
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• 2005

Chemical mechanical polishing is an essential process in the production of copper-based chips. On this work, the stability of hydrogen peroxide ($H_{2}O_{2}$) as an oxidizer of copper CMP slurry has been investigated. $H_{2}O_{2}$ is known as the most common oxidizer in copper CMP slurry. But $H_{2}O_{2}$ is so unstable that its stabilization is needed using as an oxidizer. As adding KOH as a pH buffering agent, stability of $H_{2}O_{2}$ decreased. However, $H_{2}O_{2}$ stability in slurry went up with putting in small amount of BTA as a film forming agent. There was no difference of $H_{2}O_{2}$ stability between pH buffering agents KOH and TMAH at similar pH value. Addition of $H_{2}O_{2}$ in slurry in advance of bead milling led to better stability than adding after bead milling. Adding phosphoric acid resulted in the higher stability. Using alumina C as an abrasive was good at stabilizing for $H_{2}O_{2}$.

• Asian-Australasian Journal of Animal Sciences
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• v.22 no.5
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• pp.732-739
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• 2009

Pig slurry is a good soil amendment not only because of its high organic matter content, but also because of its ability to provide various nutrients. The objective of this study was to estimate the influence of raw and processed pig slurry application on pot soil over chemical fertilizer and non-amended control soil. Change in the chemical parameters (pH, organic matter (OM), organic carbon (OC), macro and micronutrients) and microbial mass of the treated soils were monitored over 30 to 90 days. Pot soil was treated with the recommended dose of pig slurry and chemical fertilizer, and was sampled after 30, 60 and 90 days of incubation. The least significanct difference (p<0.05) was observed on Fe, Cu, Zn, available P and K between treatments. All treatments increased N, P and K content and microbial mass of soil over control soil. Interestingly, no significant effects were detected on OM, OC, total bacteria, actinomycetes and fungi mass in soil irrespective of treatments given. However fungal and bacterial counts, as well as available nutrients, were found to be higher in processed slurry (PS)-treated soil compared to other soils. In general a significant correlation existed between the fungal count and OM, OC, Zn, T Kjeldahl N (TKN), available P and K of soil. A strong negative correlation was observed between pH and Fe in soil. This study clearly demonstrated that the use of processed manure as a fertilizer could be a key for sustainable livestock agriculture.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.426-430
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• 2005

Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.

• Clean Technology
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• v.12 no.4
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• pp.232-237
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• 2006

The zinc-based desulfurization sorbents for a fluidized-bed system were prepared by a spray drying method and the effects of the pH and viscosity of the slurry on the attrition resistance of the prepared sorbents were investigated in this work. In order to improve the attrition resistance, alumina sol was used for an inorganic binder and pH of the slurry was changed for its better dispersion in slurry. The attrition resistance of the prepared sorbents decreased due to the phase transition of alumina sol to gel as the slurry pH increased to its basicity. The optimum pH condition for the good attrition resistance of the sorbents was about 6.0 in this study. It was confirmed that the attrition property of the sorbents were varied with the viscosity of the slurry. The attrition resistance of the sorbents prepared by the spray drying method increased as their bulk density increased, while it decreased as the surface area and porosity of the sorbents. The optimum viscosity for the high attrition was in the range 400-500 cP.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.233-236
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• 2004

Copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. One of the key issues in copper CMP is the development of slurries that can provide high removal rates. In this study, the effects of slurry chemicals and pH for slurry dispersion stability on Cu CMP process characteristics have been performed. The experiments of copper slurries containing each different alumina and colloidal silica particles were evaluated for their selectivity of copper to TaN and $SiO_{2}$ films. Furthermore, the stability of copper slurries and pH are important parameters in many industries due to problems that can arise as a result of particle settling. So, it was also observed about several variables with various pH.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.51-56
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• 2018

To evaluate surface characteristics of AlN single crystal grown by physical vapor transport (PVT) method, chemical mechanical polishing (CMP) were performed with diamond slurry and $SiO_2$ slurry after mechanical polishing (MP), then the surface morphology and analysis of polishing characteristics of the slurry types were analyzed. To estimate how pH of slurry effects polishing process, pH of $SiO_2$ slurry was controlled, the results from estimating the effect of zeta potential and MRR (material removal rate) were compared in accordance with each pH via zeta potential analyzer. Eventually, surface roughness RMS (0.2 nm) could be derived with atomic force microscope (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.112-112
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• 2008

최근 Ruthenium (Ru) 은 높은 화학적 안정성, 누설전류에 대한 높은 저항성, 저유전체와의 높은 안정성 등과 같은 특성으로 인해 금속층-유전막-금속층 캐패시터의 하부전극으로 각광받고 있다. 또한 Cu와의 우수한 Adhesion 특성으로 인해 Cu 배선에서의 Cu 확산 방지막으로도 주목받고 있다. 그러나 이렇게 형성된 Ru 하부전극의 각 캐패시터간의 분리와 평탄화를 위해서는 CMP 공정이 도입이 필요하다. 이러한 CMP 공정에 공급되는 Slurry 에는 부식액, pH 적정제, 연마입자 등이 첨가되는데 이때 연마입자가 응집하여 Slurry의 분산 안전성 저하에 영향을 줄수 있다. 이로 인해 응집된 Slurry는 Scratch와 Delamination 과 같은 표면 결함을 유발할 수 있으며, Slurry의 저장 안정성을 저하시켜 Slurry의 물리적 화학적 특성을 변화시킬 수 있다. 그리하여 본 연구에서는 Ru CMP Slurry에서의 Surfactant와 같은 분산 안정제에 따른 Surface tension, Zeta potential, Particle size, Sedimentation의 분석을 통해 Slurry 안정성에 대한 영향을 살펴보았다. 그 결과 pH9 조건의 31ppm Dispersant 농도에서 50%이상의 Sedimentation 상승효과를 얻을 수 있었다. 또한 선택된 Surfactant가 첨가된 Ru CMP Slurry를 제조하여 Ru wafer의 Static etch rate, Passivation film thickness 와 Wettability를 비교해 보았다. 그리고 CMP 공정을 실시하여 Ru의 Removal rate와 TEOS에대한 Selectivity를 측정해 보았다.