[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/TEEM.2004.5.6.233

Optimization of Removal Rates with Guaranteed Dispersion Stability in Copper CMP Slurry

Kim Tae-Gun (School of Electrical and Electronics Engineering, Chung-ang University)
Kim Nam-Hoon (School of Electrical and Electronics Engineering, Chung-ang University)
Kim Sang-Yong (School of Electrical and Electronics Engineering, Chung-ang University)
Chang Eui-Goo (School of Electrical and Electronics Engineering, Chung-ang University)

Publication Information

Transactions on Electrical and Electronic Materials / v.5, no.6, 2004 , pp. 233-236 More about this Journal

Abstract

Copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. One of the key issues in copper CMP is the development of slurries that can provide high removal rates. In this study, the effects of slurry chemicals and pH for slurry dispersion stability on Cu CMP process characteristics have been performed. The experiments of copper slurries containing each different alumina and colloidal silica particles were evaluated for their selectivity of copper to TaN and $SiO_{2}$ films. Furthermore, the stability of copper slurries and pH are important parameters in many industries due to problems that can arise as a result of particle settling. So, it was also observed about several variables with various pH.

Keywords

Chemical mechanical polishing; Copper; Slurry; Dispersion stability; Removal rate;

Citations & Related Records

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