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http://dx.doi.org/10.4313/TEEM.2005.6.4.164

Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis  

Kim, Nam-Hoon (Research Institute of Energy Resources Technology, Chosun University)
Seo, Yong-Jin (Department of Electrical and Electronic Engineering, Daebul University)
Ko, Pil-Ju (Department of Electrical Engineering, Chosun University)
Lee, Woo-Sun (Department of Electrical Engineering, Chosun University)
Publication Information
Transactions on Electrical and Electronic Materials / v.6, no.4, 2005 , pp. 164-168 More about this Journal
Abstract
Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.
Keywords
Chemical mechanical polishing (CMP); Tetra-ethyl ortho-silicate (TEOS); Slurry temperature; Removal rate; pH; X-ray photoelectron spectroscopy (XPS);
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